IXTP76P10T

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = =  RDS(on) - 100V - 76A  25m TO-268HV (IXTT) G D S D (Tab) G TO-263 AA (IXTA) S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 100 V VDGR TJ = 25C to 150C, RGS = 1M - 100 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 76 A IDM TC = 25C, Pulse Width Limited by TJM - 230 A IA EAS TC = 25C TC = 25C - 38 1 A J PD TC = 25C 298 W D -55 ... +150 150 -55 ... +150 C C C G = Gate S = Source 300 260 °C °C Features 1.13 /10 Nm/lb.in. 2.5 3.0 4.0 6.0 g g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-268HV TO-247 TO-220AB (IXTP) G DS D (Tab) TO-247 (IXTH) G S D (Tab) D = Drain Tab = Drain  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1   V - 4.0 © 2017 IXYS CORPORATION, All Rights Reserved Applications V 100 nA TJ = 125C Easy to Mount Space Savings - 15 A - 750 A 25 m       High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100024C(9/15) IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 35 Ciss VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 (External) tf Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd 58 S 13.7 nF 890 pF 275 pF 25 ns 40 ns 52 ns 20 ns 197 nC 65 nC 65 nC 0.42 C/W RthJC TO-220 TO-247 RthCS 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = - 38A, VGS = 0V, Note 1 trr QRM IRM IF = - 38A, -di/dt = -100A/s VR = - 50V, VGS = 0V Note 1: C/W C/W 70 215 -6 - 76 A - 304 A -1.3 V  ns nC A Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -80 -280 VGS = -10V - 9V - 8V -70 VGS = -10V -60 - 6V -40 - 8V -200 - 7V -50 I D - Amperes I D - Amperes - 9V -240 -30 -160 - 7V -120 -80 -20 -10 - 6V -40 - 5V - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 0 -2 -5 -10 -15 2.0 -80 VGS = -10V - 9V - 8V - 7V -30 VGS = -10V 1.8 RDS(on) - Normalized I D - Amperes -60 -25 Fig. 4. RDS(on) Normalized to ID = - 38A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C -70 -20 VDS - Volts VDS - Volts - 6V -50 -40 -30 - 5V -20 1.6 I D = - 76A I D = - 38A 1.4 1.2 1.0 0.8 -10 0 0.6 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -2.8 -3.2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 38A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -90 2.2 VGS = -10V -80 2.0 o TJ = 125 C -60 I D - Amperes RDS(on) - Normalized -70 1.8 1.6 1.4 -50 -40 -30 1.2 o TJ = 25 C 1.0 -20 -10 0 0.8 0 -40 -80 -120 -160 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -200 -240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Fig. 7. Input Admittance Fig. 8. Transconductance 100 -140 o TJ = - 40 C VDS = -10V VDS = -10V -120 80 o 25 C -100 o g f s - Siemens I D - Amperes TJ = 125 C o 25 C o - 40 C -80 -60 o 125 C 60 40 -40 20 -20 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -100 -120 -140 -160 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -10 -240 VDS = - 50V -9 -200 I D = - 38A -8 I G = -1mA -7 V GS - Volts -160 I S - Amperes -80 I D - Amperes -120 o TJ = 125 C -80 -6 -5 -4 -3 o TJ = 25 C -2 -40 -1 0 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 0 20 40 60 VSD - Volts 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 - 1,000 1ms RDS(on) Limit 10,000 - 100 Ciss I D - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 100µs 25µs 10ms 100ms DC - 10 C oss o TJ = 150 C o TC = 25 C Single Pulse C rss -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. -1 -10 VDS - Volts -100 IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 44 44 RG = 1Ω, VGS = -10V 40 40 t r - Nanoseconds t r - Nanoseconds VDS = - 50V 36 I D = - 38A 32 28 o TJ = 25 C 36 RG = 1Ω, VGS = -10V VDS = - 50V 32 28 I D = - 76A o 24 TJ = 125 C 24 20 20 25 35 45 55 65 75 85 95 105 115 125 -36 -40 -44 -48 TJ - Degrees Centigrade tr td(on) tf -68 -72 -76 I D = - 76A, - 38A 80 50 40 30 70 65 VDS = - 50V 21 60 I D = - 38A 20 55 19 50 I D = - 76A 18 45 17 0 2 4 6 8 10 12 14 16 18 40 16 10 0 25 20 35 45 55 24 tf td(off) tf 19 46 o TJ = 125 C, 25 C 18 42 17 38 16 34 -56 -60 -64 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -68 -72 -76 t f - Nanoseconds 50 -52 35 125 td(off) 240 VDS = - 50V I D = - 38A, - 76A 120 180 80 120 40 60 0 0 0 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 20 t d(off) - Nanoseconds t f - Nanoseconds 160 54 -48 115 TJ = 125 C, VGS = -10V 58 21 -44 105 o RG = 1Ω, VGS = -10V -40 95 300 62 VDS = - 50V -36 85 200 66 o 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 22 65 TJ - Degrees Centigrade RG - Ohms 23 t d(off) - Nanoseconds 70 t f - Nanoseconds 22 120 td(off) RG = 1Ω, VGS = -10V 90 t d(on) - Nanoseconds t r - Nanoseconds -64 75 23 o VDS = - 50V -60 24 110 TJ = 125 C, VGS = -10V 160 -56 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 200 -52 I D - Amperes IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Fig. 19. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_76P10T(A6)11-08-10-A IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-263 Outline TO-247 Outline TO-220 Outline D A A2 A B E Q S R D2 D1 D P1 1 2 4 3 L1 C 1 = Gate 2 = Drain 3 = Source 4 = Drain A1 C b b2 b4 e Pins: © 2017 IXYS CORPORATION, All Rights Reserved E1 L 1 - Gate 3 - Source 2 - Drain 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.