IXTT1N250HV

Advance Technical Information IXTT1N250HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, Pulse Width Limited by TJM 6 A PD TC = 25°C 250 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 4 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Weight G = Gate S = Source D = Drain Tab = Drain Features z z z z High Blocking Voltage High Voltage Package Fast Intrinsic Diode Low Package Inductance Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 2500 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Applications V 4.0 V ±100 nA TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 25 Easy to Mount Space Savings High Power Density z z z High Voltage Power Supplies Capacitor Discharge Pulse Circuits 25 μA μA 40 Ω DS100521(12/12) IXTT1N250HV Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 0.5A, Note 1 1.0 Ciss TO-268 (VHV) Outline 1.8 mS 1660 pF 77 pF Crss 23 pF td(on) 69 ns 25 ns 132 ns 39 ns 41 nC Coss tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 1A RG = 5Ω (External) Qg(on) Qgs VGS = 10V, VDS = 600V, ID = 0.5A Qgd 8 nC 16 nC PIN: 1 - Gate 2 - Source 3 - Drain 0.50 °C/W RthJC RthCS °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 1A, VGS = 0V, Note 1 trr IF = 1A, -di/dt = 100A/μs, VR = 200V Note 2.5 1.5 A 6 A 1.5 V μs 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT1N250HV Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = @ 25ºC 1 1 VGS = 10V 0.8 0.8 5V 0.7 5V 0.7 ID - Amperes ID - Amperes VGS = 10V 0.9 0.9 0.6 0.5 0.4 0.6 0.5 4V 0.4 0.3 0.3 0.2 0.2 4V 0.1 0.1 0 0 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 80 90 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.4 2.6 VGS = 10V VGS = 10V 2.2 R DS(on) - Normalized R DS(on) - Normalized 2.2 1.8 I D = 1A 1.4 I D = 0.5A 1.0 TJ = 125ºC 2.0 1.8 1.6 1.4 1.2 0.6 TJ = 25ºC 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 0.1 0.2 0.3 TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature 0.5 0.6 0.7 0.8 0.9 1 Fig. 6. Input Admittance 1.6 0.9 1.4 0.8 0.7 ID - Amperes 1.2 ID - Amperes 0.4 ID - Amperes 1 0.8 0.6 0.6 0.5 0.4 TJ = 125ºC 25ºC - 40ºC 0.3 0.4 0.2 0.2 0.1 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved 100 125 150 2.8 3.0 3.2 3.4 3.6 3.8 4.0 VGS - Volts 4.2 4.4 4.6 4.8 5.0 IXTT1N250HV Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 3 3 TJ = - 40ºC 2.5 2.5 2 2 IS - Amperes g f s - Siemens 25ºC 125ºC 1.5 1.5 TJ = 125ºC 1 1 0.5 0.5 0 TJ = 25ºC 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.3 0.4 0.5 ID - Amperes Fig. 9. Gate Charge 0.7 0.8 0.9 Fig. 10. Capacitance 10 10,000 f = 1MHz VDS = 600V 9 I D = 500mA 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 0.6 VSD - Volts 6 5 4 3 Ciss 1,000 Coss 100 2 1 Crss 0 10 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 10 10 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 1 ID - Amperes ID - Amperes 100µs 1 1ms 10ms 100ms 0.1 1ms 10ms 0.1 100ms DC 0.01 100 TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 100 DC 1,000 VDS - Volts 10,000 IXTT1N250HV Fig. 13. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N250 (5P)10-25-10-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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