IXTT75N10

MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS(on) 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS Continuous VGSM Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM 67N10 75N10 TC = 25°C TJ TJM 67N10 75N10 V ±20 V ±30 V 67 75 A A -55 ... +150 °C 150 °C -55 ... +150 °C BS TO-204 TO-247 TO-268 O Test Conditions 1.13/10 Nm/lb.in. 18 6 5 10 TO-268 (IXTT) g g g Features °C z z z z z Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 V 4 V ±100 nA z z 250 1 µA mA z z z z z TJ = 25°C TJ = 125°C 67N10 75N10 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.025 0.020 Ω Ω G S D (TAB) D = Drain, TAB = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages z z z IXYS reserves the right to change limits, test conditions, and dimensions. D Applications z VGS = 0 V, ID = 250 µA G G = Gate, S = Source, z VDSS © 2003 IXYS All rights reserved (TAB) TO-204 AE (IXTM) A A W Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol 100 300 Mounting torque Weight V 268 300 O Tstg Md 100 LE PD Maximum Ratings TE Symbol Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density DS91533F(9/03) 1 IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = ID25, pulse test 30 S 4500 pF 1300 pF Crss 550 pF td(on) 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 td(off) RG = 2 Ω, (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC (TO-204, TO-247) Source-Drain Diode Test Conditions IS VGS = 0 V 110 ns 140 ns 30 60 ns 180 260 nC 30 70 nC 90 160 nC 0.42 K/W 0.25 Terminals: 1 - Gate 3 - Source 67 75 A A 67N10 75N10 268 300 A A 1.75 V IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % BS VSD IF = IS, -di/dt = 100 A/µs, VR = 100 V 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC K/W 67N10 75N10 Repetitive; pulse width limited by TJM 3 Dim. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ISM trr 60 100 O Symbol 2 ns LE RthCK 60 1 TE 25 TO-247 AD (IXTH) Outline 200 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-204AE (IXTM) Outline ns TO-268 (IXTT) Outline Pins Dim. O IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 1 - Gate 2 - Source Case - Drain 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 Millimeter Min. Max. A 6.4 11.4 A1 3.42 ∅b .97 1.09 ∅D 22.22 e 10.67 11.17 e1 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L ∅p ∅p1 q R R1 s .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 7.93 3.84 4.19 3.84 4.19 30.15 BSC 13.33 4.77 16.64 17.14 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665 6,306,728B1 6,534,343 IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Fig. 1 Output Characteristics 200 Fig. 2 125 ID - Amperes 9V 150 8V 100 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Volts 50 25 0 TJ = 125°C 0 1 2 3 4 Fig. 4 5 TJ = 25°C 6 7 8 9 10 Temperature Dependence of Drain to Source Resistance LE 1.4 2.50 TJ = 25°C 2.25 1.3 1.2 VGS = 10V 1.1 1.0 O RDS(on) - Normalized 75 VGS - Volts Fig. 3 RDS(on) vs. Drain Current VGS = 15V 0.9 0 20 40 60 80 2.00 1.75 1.50 ID = 37.5A 1.25 1.00 0.75 0.50 -50 100 120 140 160 BS 0.8 100 TE 7V 50 RDS(on) - Normalized ID - Amperes 150 VGS = 10V TJ = 25°C Input Admittance -25 0 ID - Amperes 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 80 O 1.1 BV/VG(th) - Normalized 67N10 60 ID - Amperes 1.2 75N10 40 20 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C IXYS reserves the right to change limits, test conditions, and dimensions. © 2003 IXYS All rights reserved 3 IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 VDS = 50V ID = 37.5A IG = 1mA 9 8 ID - Amperes 100 6 5 4 3 1 0 0 25 50 75 Gate Charge - nCoulombs 1 10 100ms 100 LE Fig.10 Source Current vs. Source to Drain Voltage 150 5000 125 Ciss 4000 f = 1MHz VDS = 25V 3000 O Capacitance - pF 10ms 10 VDS - Volts Fig.9 Capacitance Curves 2000 Coss 1000 Crss 0 5 10 15 20 100 75 50 TJ = 125°C TJ = 25°C 0.50 1.00 25 0 0.00 BS 0 1ms 1 100 125 150 175 200 6000 100µs TE 2 IS - Amperes VGS - Volts 7 10µs Limited by RDS(on) 25 0.25 VDS - Volts 0.75 1.25 1.50 VSD - Volt Thermal Response - K/W O Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665 6,306,728B1 6,534,343 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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