VUO110-08NO7

VUO110-08NO7 3~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 125 A I FSM = 1200 A 3~ Rectifier Bridge Part number VUO110-08NO7 A+ D1 D3 D5 D2 D4 D6 E~ D~ C~ B- Features / Advantages: Applications: Package: PWS-E ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Easy to mount with two screws ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220c VUO110-08NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 800 IR reverse current VF forward voltage drop min. typ. VR = 800 V TVJ = 25°C 100 µA TVJ = 150°C 2 mA IF = TVJ = 25°C 1.13 V 1.46 V 1.04 V IF = 50 A TVJ = 125 °C 50 A I F = 150 A bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 110 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.47 V T VJ = 150 °C 125 A TVJ = 150 °C 0.79 V 4.5 mΩ d=⅓ for power loss calculation only Ptot V VR = 800 V I F = 150 A I DAV max. Unit 900 V 0.7 K/W 0.3 K/W TC = 25°C 175 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.20 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.30 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.02 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.10 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 7.20 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 6.98 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 5.20 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 5.04 kA²s 37 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220c VUO110-08NO7 Package Ratings PWS-E Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 °C -40 125 °C 125 °C 284 Weight g MD mounting torque 4.25 5.75 Nm MT terminal torque 4.25 5.75 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Logo UL Product Number 26.0 mm 3000 V 2500 V XXXX-XXXX yywwZ 1234 Ordering Standard Location Lot# Ordering Number VUO110-08NO7 Equivalent Circuits for Simulation V0 mm Circuit Diagram Date Code I 50/60 Hz, RMS; IISOL ≤ 1 mA 12.0 R0 Marking on Product VUO110-08NO7 * on die level Delivery Mode Box Code No. 462365 T VJ = 150°C Rectifier V 0 max threshold voltage 0.79 V R0 max slope resistance * 3.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 5 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220c VUO110-08NO7 Outlines PWS-E 3 30 7 M6x12 94 80 72 26 54 27 6.5 C ~ D ~ E ~ B - A + 3 4 2 5 1 6 12 6.5 15 26 7 25 66 M6 A+ D1 D3 D5 D2 D4 D6 E~ D~ C~ B- IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220c VUO110-08NO7 Rectifier 1000 200 104 50Hz, 80% VRRM 50 Hz 0.8 x V RRM 160 800 120 IFSM 80 [A] IF TVJ = 45°C 2 TVJ = 150°C T VJ = 150°C 40 TVJ= 150°C [A s] 600 [A] TVJ= 45°C 2 It TVJ = 125°C TVJ = 25°C 0 0.5 1.0 400 0.001 1.5 103 0.01 0.1 1 2 1 3 2 Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current vs. voltage drop per diode 4 5 6 7 89 t [ms] t [s] VF [V] Fig. 3 I t vs. time per diode 160 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 50 DC = 1 0.5 0.4 0.33 0.17 0.08 40 Ptot 30 [W] 120 DC = 1 0.5 0.4 0.33 0.17 0.08 IFAVM 80 [A] 20 40 10 0 0 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0 25 Tamb [°C] IFAV [A] 50 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.8 0.6 ZthJC 0.4 [K/W] 0.2 0.0 1 10 100 1000 10000 Ri 0.100 ti 0.020 0.010 0.010 0.162 0.225 0.258 0.800 0.170 0.580 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220c