2SD2098

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES z Excellent DC current gain characteristics z Complements the 2SB1386 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 1 2 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, =0 6 V Collector cut-off current ICBO VCB=40V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.5 μA DC current gain hFE VCE=2V,IC=0.5A VCE(sat) IC=4A,IB=100mA Collector-emitter saturation voltage Transition frequency Collector output capacitance fT Cob 120 390 1 V VCE=6V,IC=50mA,f=100MHz 150 MHz VCB=20V,IE=0,f=1MHz 30 pF CLASSIFICATION OF hFE Rank Range Marking Q R 120-270 180-390 AHQ AHR A,Jun,2011