8050SS

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-92 Plastic-Encapsulate Transistors 8050SS TRANSISTOR (NPN) FEATURES z General Purpose Switching and Amplification. TO – 92 1. EMITTER 2. COLLECTOR 3. BASE  8050SS Z Equivalent Circuit 8050SS=Device code Z=Rank of hFE XXX=Code GXX=Green molding compound device CXX=Normal molding compound device 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 8050SS 72 %XON 1000pcs/Bag 8050SS7$ 72 7DSH 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage IC Collector Current PC Collector Power Dissipation R θJA Thermal Resistance From Junction To Ambient TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 5 V 1.5 A 1 W 125 ℃ /W -55~+150 ℃ Rev. - 2.1  Ta =25 Я unless otherwise specified Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 85 hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA,IB=80mA 0.5 V Base-emitter saturation voltage VBE (sat) IC=800mA,IB=80mA 1.2 V DC current gain 300 Base-emitter voltage VBE VCE=1V, IC=10mA 1.0 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 15 pF Transition frequency fT VCE=10V,IC= 50mA, f=30MHz 100 MHz CLASSIFICATION OF hFE(1) RANK B C D RANGE 85-160 120-200 160-300 www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Static Characteristic 0.30 0.9mA DC CURRENT GAIN IC COLLECTOR CURRENT 0.7mA 0.6mA 0.15 IC 300 0.8mA 0.20 —— Ta=100℃ hFE (A) COMMON EMITTER Ta=25℃ 1mA 0.25 hFE 1000 0.5mA 0.4mA 0.10 Ta=25℃ 100 0.3mA 0.2mA 0.05 COMMON EMITTER VCE= 1V IB=0.1mA 0.00 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat —— 7 1 10 100 COLLECTOR CURRENT IC VBEsat —— 1200 1000 1500 IC (mA) IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 6 VCE (V) 100 Ta=100 ℃ Ta=25℃ 10 800 Ta=25℃ 600 Ta=100 ℃ 400 β=10 β=10 1 1 10 100 COLLECTOR CURREMT IC 1500 —— IC 1000 1500 1 10 100 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— 1000 1500 IC (mA) VCB/VEB 1000 Ta=25 ℃ (pF) (mA) CAPACITANCE T= a 25 ℃ T= a 10 0℃ 100 C IC COLLECTOR CURRENT f=1MHz IE=0/IC=0 Cib 10 Cob 10 COMMON EMITTER VCE= 1V 1 0.1 1 0 300 600 900 1200 1 BESE-EMITER VOLTAGE VBE (mV) IC fT TRANSITION FREQUENCY PC 1.2 (MHz) —— COLLECTOR POWER DISSIPATION PC (W) fT 1000 10 REVERSE VOLTAGE 100 10 COMMON EMITTER VCE=10V —— V 20 (V) Ta 1.0 0.8 0.6 0.4 0.2 Ta=25℃ 1 0.0 2 10 COLLECTOR CURRENT www.jscj-elec.com 100 IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta 125 150 (℃ ) Rev. - 2.1 723DFNDJH2XWOLQH'LPHQVLRQV 6\PERO A A1 b c D D1 E e e1 L  h 'LPHQVLRQV,Q0LOOLPHWHUV 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0LQ 0D[ 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 726XJJHVWHG3DG/D\RXW NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 727DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.1