JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050SS
TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification.
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
8050SS
Z
z
Equivalent Circuit
8050SS 'HYLFHFRGH
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Z=Rank of hFE
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1
ORDERING INFORMATION
Part Number
Package
Packing Method
8050SS
72
%XON
1000pcs/Bag
8050SS7$
72
7DSH
2000pcs/Box
Pack Quantity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para
meter
Value
Unit
V CBO
Collector-Base Voltage
40
V
V CEO
Collector-Emitter Voltage
25
V
V EBO
Emitter-Base Voltage
5
V
1.5
A
1
W
IC
Collector Current
PC
Collector Power Dissipation
R θJA
Thermal Resistance From Junction To Ambient
125
℃ /W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
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1
D,Aug,2017
Ta =25 Я unless otherwise specified
Parameter
Symbol
T est
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=1V, IC=100mA
85
hFE(2)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=800mA,IB=80mA
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC=800mA,IB=80mA
1.2
V
DC current gain
300
Base-emitter voltage
VBE
VCE=1V, IC=10mA
1.0
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
15
pF
Transition frequency
fT
VCE=10V,IC= 50mA, f=30MHz
100
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
BCD
85-160
www.cj-elec.com
120-200
160-300
D,Aug,2017
Typical Characteristics
Static Characteristic
0.30
hFE
0.8mA
0.20
DC CURRENT GAIN
(A)
0.9mA
IC
COLLECTOR CURRENT
COMMON
EMITTER
Ta=25℃
1mA
0.25
hFE
1000
0.7mA
0.6mA
0.15
0.5mA
0.4mA
0.10
——
IC
Ta=100℃
300
Ta=25℃
100
0.3mA
0.2mA
0.05
COMMON EMITTER
VCE= 1V
IB=0.1mA
0.00
10
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
7
1
10
100
COLLECTOR CURRENT
IC
VBEsat ——
1200
1000 1500
IC
(mA)
IC
1000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
1000
6
VCE (V)
100
Ta=100 ℃
Ta=25℃
10
800
Ta=25℃
600
Ta=100 ℃
400
β=10
1
1
10
100
COLLECTOR CURREMT
IC
1500
——
IC
β=10
1000 1500
1
10
COLLECTOR CURREMT
(mA)
VBE
Cob/Cib
100
——
100
IC
VCB/VEB
f=1MHz
IE=0/IC=0
1000
Ta=25 ℃
(pF)
(mA)
Cib
CAPACITANCE
T=
a 25
℃
T=
a 10
0℃
100
C
IC
COLLECTOR CURRENT
1000 1500
(mA)
10
Cob
10
COMMON EMITTER
VCE= 1V
1
0.1
1
0
300
600
900
1200
1
BESE-EMITER VOLTAGE VBE (mV)
IC
fT
TRANSITION FREQUENCY
PC
1.2
(MHz)
——
COLLECTOR POWER DISSIPATION
PC (W)
fT
1000
10
REVERSE VOLTAGE
100
10
COMMON EMITTER
VCE=10V
——
V
20
(V)
Ta
1.0
0.8
0.6
0.4
0.2
Ta=25℃
1
2
10
COLLECTOR CURRENT
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0.0
100
IC
0
(mA)
3
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
125
150
D,Aug,2017
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3.300
3.700
0.130
0.146
1.100
1.400
0.043
0.055
0.380
0.550
0.015
0.022
0.360
0.510
0.014
0.020
4.
4.700
3.430
0.135
4.300
4.700
0.169
0.185
1.270 TYP
0.050 TYP
2.440
2.640
0.096
0.104
14.100
14.500
0.555
0.571
1.600
0.063
0.000
0.380
0.000
0.015
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