SS8050BBU

DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor TO−92−3 CASE 135AN SS8050 12 Features 3 • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Base Voltage VCBO 40 V Collector−Emitter Voltage VCEO 25 V Emitter−Base Voltage VEBO 6 V Collector Current IC 1.5 A Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Power Dissipation 1 2 3 1. Emitter 2. Base 3. Collector MARKING DIAGRAM AS8 050x YWW S8050x = Specific Device Code Line 1: A = Assembly Location Line 2: x = B, C or D Line 3: Y = Year WW= Work Week Symbol Value Unit PD 1 W 8 mW/°C ORDERING INFORMATION °C/W See detailed ordering and shipping information on page 2 of this data sheet. Derate Above 25°C Thermal Resistance, Junction−to−Ambient TO−92−3 CASE 135AR RqJA 125 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2004 February, 2022 − Rev. 2 1 Publication Order Number: SS8050/D SS8050 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector−Base Breakdown Voltage IC = 100 mA, IE = 0 40 V BVCEO Collector−Emitter Breakdown Voltage IC = 2 mA, IB = 0 25 V BVEBO Emitter−Base Breakdown Voltage IE = 100 mA, IC = 0 6 V ICBO Collector Cut−Off Current VCB = 35 V, IE = 0 IEBO Emitter Cut−Off Current VEB = 6 V, IC = 0 hFE1 DC Current Gain VCE = 1 V, IC = 5 mA 45 VCE = 1 V, IC = 100 mA 85 VCE = 1 V, IC = 800 mA 40 hFE2 hFE3 100 nA 100 nA 300 VCE(sat) Collector−Emitter Saturation Voltage IC = 800 mA, IB = 80 mA 0.5 V VBE(sat) Base−Emitter Saturation Voltage IC = 800 mA, IB = 80 mA 1.2 V VBE(on) Base−Emitter On Voltage VCE = 1 V, IC = 10 mA Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Current Gain Bandwidth Product VCE = 10 V, IC = 50 mA Cob fT 1 9.0 V pF 100 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ORDERING INFORMATION Part Number Top Mark Package Shipping SS8050BBU S8050B TO−92−3, case 135AN (Pb−Free) 10,000 Units/ Bulk Box SS8050CBU S8050C TO−92−3, case 135AN (Pb−Free) 10,000 Units/ Bulk Box SS8050CTA S8050C TO−92−3, case 135AR (Pb−Free) 2,000 Units/ Fan−Fold SS8050DBU S8050D TO−92−3, case 135AN (Pb−Free) 10,000 Units/ Bulk Box SS8050DTA S8050D TO−92−3, case 135AR (Pb−Free) 2,000 Units/ Fan−Fold www.onsemi.com 2 SS8050 TYPICAL PERFORMANCE CHARACTERISTICS 1000 VCE = 1V IB = 3.0 mA 0.4 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT [mA] 0.5 IB = 2.5 mA 0.3 IB = 2.0 mA IB = 1.5 mA 0.2 IB = 1.0 mA 0.1 100 10 IB = 0.5 mA 0 0.4 0.8 1.2 1.6 1 0.1 2.0 10 100 1000 Figure 2. DC Current Gain 10000 100 IC = 10 IB IC, COLLECTOR CURRENT [mA] VBE(sat), VCE(sat), SATURATION VOLTAGE [V] Figure 1. Static Characteristic VBE(sat) 1000 100 VCE(sat) 10 0.1 VCE = 1V 10 1 0.1 1 10 100 0 1000 IC, COLLECTOR CURRENT [mA] fT, CURRENT GAIN BANDWIDTH PRODUCT [MHz] f = 1 MHz IE = 0 100 10 1 10 0.4 0.6 0.8 1.0 1.2 Figure 4. Base−Emitter On Voltage 1000 1 0.2 VBE, BASE−EMITTER VOLTAGE [V] Figure 3. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage Cob, CAPACITANCE [pF] 1 IC, COLLECTOR CURRENT [mA] VCE, COLLECTOR−EMITTER VOLTAGE [V] 100 VCB, COLLECTOR−BASE VOLTAGE [V] Figure 5. Collector Output Capacitance 1000 VCE = 10V 100 10 1 1 10 100 400 IC, COLLECTOR CURRENT [mA] Figure 6. Current Gain Bandwidth Product www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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