CJAC10TH10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX 8mΩ@10V 100V 10mΩ@4.5V ID PQFN:%5×6-8L 5 6 7 8 100A DESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES   4 3 2 1 APPLICATIONS Low RDS(on) Low Gate Charge   High efficiency power supply Secondary synchronus rectifier EQUIVALENT CIRCUIT MARKING CJAC10TH10 = Part No. 8 D 7 D 6 D 5 D Solid dot=Pin1 indicator CJAC 10TH10 XX=Date Code XX 2 1 S 3 S 4 S G ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 ID 100 IDM 300 Avalanche energy* EAS 130 mJ Maximum Power Dissipation (Tc=25℃) PD 100 W Thermal Resistance from Junction to Case RθJC 1.25 ℃/W Thermal Resistance from Junction to Ambient (note 3) RθJA 42 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 Continuous Drain Current Pulsed Drain Current (1) Unit V A ℃ * EAS test condition VDD=50V, RG=50 Ω, L=0.3 mH, starting Tj=25 ℃. www.jscj-elec.com 1 Rev. - 1.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =250µA 1.8 2.5 V VGS =10V, ID =12A 5.8 8.0 VGS =4.5V, ID =9A 8.5 10.0 Gate threshold voltage (1) Drain-source on-resistance (1) RDS(on) Gate resistance 100 1.0 V RG 3.0 Total gate charge Qg 43.3 Gate-source charge Qgs Gate-drain charge Qgd 12.4 Input Capacitance Ciss 3950 Output Capacitance Coss Dynamic characteristics mΩ Ω (2) Reverse Transfer Capacitance SWITCHING PARAMETERS VDS =50V,VGS =10V,ID =10A VDS =50V,VGS =0V,f =1MHz 5.6 nC 521 Crss 12 td(on) 21.4 pF (2) Turn-on delay time Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time Source-Drain Diode characteristics VGS=10V, VDS=50V, RG=2Ω, 8.7 ID=10A 68.4 tf ns 43.2 (1) Body diode voltage VSD Reverse recovery time Trr Reverse recovery charge Qrr IS=30A,VGS=0V VR=50V,IS=10A,di/dt=100A/µs 1.3 V 68 ns 160 nC Notes: 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. 3. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 1.5oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.1 Typical Characteristics Output Characteristics 120 Transfer Characteristics 30 VDS=5V Pulsed Pulsed 100 (A) ID 80 VGS=10 V DRAIN CURRENT DRAIN CURRENT ID (A) 25 VGS=4.5V 60 40 VGS= 3V 20 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 1 Ta=25℃ Pulsed ID=20A (m) 16 RDS(ON) 12 10 VGS=4.5V 8 VGS=10V 6 4 14 12 Ta=100℃ 10 8 Ta=25℃ 6 4 2 3 5 10 15 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 2.5 25 Pulsed 2.0 ID=250uA VTH (V) 10 1 Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE IS (A) 4 (V) 18 Pulsed 2 SOURCE CURRENT 3 VGS RDS(ON)—— VGS 14 0.1 0.01 1E-3 2 GATE TO SOURCE VOLTAGE ON-RESISTANCE (m) 0 (V) 16 RDS(ON) 10 20 18 ON-RESISTANCE Ta=25℃ RDS(ON) —— ID 20 0 15 5 VGS=2.5V 0 20 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 800 1000 1200 VSD (mV) 1.5 1.0 0.5 0.0 25 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.1 Q Q NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.1