CJAC150N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power V(BR)DSS MOSFET RDS(on)TYP 1.6mΩ@10V 30 V ID PDFN:%5×6-8L 150A 2.1mΩ@4.5V DESCRIPTION 7KH &-$&151 XVHV DGYDQFHG WUHQFK WHFKQRORJ\ DQG GHVLJQ WR SURYLGH H[FHOOHQW 5'621 ZLWK ORZ JDWH FKDUJH ,W FDQ EH XVHG LQ D ZLGHYDULHW\RIDSSOLFDWLRQV FEATURES  %DWWHU\VZLWFK  *RRGVWDELOLW\DQGXQLIRUPLW\ZLWKKLJK($6  /RDGVZLWFK  ([FHOOHQWSDFNDJHIRUJRRGKHDWGLVVLSDWLRQ  +LJKGHQVLW\FHOOGHVLJQIRUXOWUDORZ5'621  6SHFLDOSURFHVVWHFKQRORJ\IRUKLJK(6'  )XOO\FKDUDFWHUL]HGDYDODQFKHYROWDJHDQG FDSDELOLW\ FXUUHQW APPLICATIONS  6036DQGJHQHUDOSXUSRVHDSSOLFDWLRQV  +DUGVZLWFKHGDQGKLJKIUHTXHQF\FLUFXLWV  EQUIVALENT CIRCUIT MARKING &-$&151 CJAC 150N03 XX 8QLQWHUUXSWLEOH3RZHU6XSSO\ 3DUW 1R 8 D 7 D 6 D 5 D 6ROLG dot = Pin1 indicator XX= Code 2 1 S 3 S 4 S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ① Continuous Drain Current ID Pulsed Drain Current IDM Single Pulsed Avalanche Energy EAS Power Dissipation 150 A ② 600 A ③ 280 mJ ① 130 W 62.5 ℃/W 0.96 ℃/W PD Thermal Resistance from Junction to Ambient RθJA Thermal Resistance from Junction to Case ⑥ RθJC ① Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ www.jscj-elec.com 1 Rev. - 1.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.6 2.5 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =30A 1.6 2.0 mΩ VGS =4.5V, ID =15A 2.1 2.7 mΩ VDS =10V, ID =2A 17 Off characteristics Drain-source breakdown voltage On characteristics 30 V ④ Forward transconductance Dynamic characteristics gFS 1.2 S ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Switching characteristics VDS =15V,VGS =0V, f =1MHz Crss 5400 pF 780 600 ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 9.5 Turn-on delay time td(on) 20 Turn-on rise time Turn-off delay time Turn-off fall time VGS=4.5V, VDS=15V, ID=24A 60 tr VDS=15V,RL=0.75Ω, 32 td(off) VGS=10V,RG=1Ω 75 tf nC 11.1 ns 28 Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD IS ④ 1.0 V ① 150 A ② 600 A ISM VGS =0V, IS=10A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=30V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.1 7\SLFDO&KDUDFWHULVWLFV Pulsed VDS=5V Pulsed 25 ID VGS=3V DRAIN CURRENT 80 60 40 20 15 10 5 20 0 Ta=25℃ (A) 100 ID DRAIN CURRENT 30 VGS=10V,8V,6V,5V,4V 120 (A) Transfer Characteristics Output Characteristics 140 VGS=2.5V 0 1 2 3 DRAIN TO SOURCE VOLTAGE VDS 0 4 0 1 (V) 2 3 4 GATE TO SOURCE VOLTAGE VGS 5 (V) RDS(ON)—— VGS RDS(ON) —— ID 3 20 Ta=25℃ Ta=25℃ Pulsed Pulsed (m) (m) 16 ON-RESISTANCE RDS(ON) ON-RESISTANCE RDS(ON) VGS= 4.5V 2 VGS= 10V 1 ID=15A 12 ID=30A 8 4 0 0 10 15 20 DRAIN CURRENT IS ━ ID 25 0 30 (A) 2 4 6 GATE TO SOURCE VOLTAGE VSD 8 VGS 10 (V) Threshold Voltage 2.5 Pulsed 1 0.1 0.1 1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 2.0 VTH Ta=25℃ 10 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 100 1.5 1.0 0.5 0.0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃) Rev. - 1.1 7\SLFDO&KDUDFWHULVWLFV Maximum Forward Biased Safe Operating Area Capacitances 1000 10 Pulsed Vds = 15V (A) Drain Current ID C (pF) CAPACITANCE Coss Crss DRAIN TO SOURCEVOLTAGE VDS (V) 10μs RDSON limited 100 1ms 10 BVDSS 1 DRAIN TO SOURCE VOLTAGE 4 100us DC 1 0.1 10 1 www.jscj-elec.com IDM Ciss 1 0.1 0.1 TC=25℃ Single pulse 100 10 VDS (V) Rev. - 1.1 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.1 www.jscj-elec.com 6 Rev. - 1.1