CJBA3134K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3134K N-Channel MOSFET V(BR)DSS RDS(on)MAX ID DFN1006-3L 500mΩ@4.5V  20V  0.75A  700mΩ@2.5V 900mΩ@1.8V  FEATURE APPLICATION z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small z Operated at Low Logic Level Gate Drive z ESD Protected Gate Portable Electronics z Logic Level Shift MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Drain-Source Voltage VDS 20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current (tp=10us) IDM 1.8 A Power Dissipation (note 1) PD 100 mW RθJA 1250 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ TL 260 ℃ Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise noted Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (2) Drain-source on-resistance (2) Forward tranconductance Dynamic characteristics RDS(on) gFS Ciss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Turn-on rise time 1 µA ±20 µA 0.75 1.1 V VGS =4.5V, ID =150mA 250 500 VGS =2.5V, ID =150mA 300 700 VGS =1.8V, ID =150mA 370 900 VGS =1.5V, ID =20mA 460 VGS =1.2V, ID =10mA 1200 VDS =10V, ID =150mA 0.35 150 mΩ mS 79 120 13 20 Crss 9 15 td(on) 6.7 VDS=16V,VGS=0V,f=1MHz pF (4) (3) (3) Turn-off delay time V (4) Input Capacitance Turn-on delay time 20 tr (3) td(off) (3) Turn-off fall time VDS=10V,ID=500mA, 4.8 VGS=4.5V,RG=10Ω 17.3 tf ns 7.4 Source-Drain Diode characteristics Diode Forward voltage (3) VDS IS=0.15A, VGS = 0V 1.2 V Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics 2.0 VGS=5V Ta=25℃ VDS=3V Plused VGS=3V Plused 1.5 VGS=2V VGS=4V Drain Current ID(A) Drain Current ID(A) 1.6 1.8 VGS=2.5V 1.2 VGS=1.5V 0.8 0.4 Ta=25℃ Ta=125℃ 1.2 0.9 0.6 0.3 0.0 0.0 0.4 0.8 1.2 1.6 0.0 0.0 2.0 Drain to Source Voltage VDS(V) 1.8 2.4 RDS(ON)——VGS ID=650mA Plused Plused 0.6 VGS=1.8V 0.4 VGS=2.5V VGS=4.5V 0.2 3.0 2.0 Ta=25℃ On-Resistancer RDSON(Ω) On-Resistancer RDSON(Ω) 1.2 Gate to Source Voltage VGS(V) RDS(ON)——ID 0.8 0.6 1.5 1.0 Ta=125℃ 0.5 Ta=25℃ 0.0 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 1 Drain Current ID(A) 2 3 4 5 Gate to Source Voltage VGS(V) IS——VSD Threshold Voltage 0.8 0.1 Threshold Voltage VTH(V) Source Current IS(A) 1 Plused Ta=125℃ Ta=25℃ 0.01 0.2 0.4 0.6 0.8 1.0 ID=250uA 0.6 0.5 25 1.2 Source to Drain Voltage VSD(V) www.jscj-elec.com 0.7 50 75 100 125 Juction Temperature TJ(℃) 3 Rev. - 1.0 DFN1006-3L Package Outline Dimensions NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0