CJK3401AH

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS ID RDS(on)MAX SOT-23-3L 50 mΩ@-10V  -30V -4.2A 60 mΩ@-4.5V 85 mΩ@-2.5V FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum z z APPLICATION z Load Switch for Portable Devices z DC/DC Converter DC current capability MARKING Equivalent Circuit D R1H G S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Drain Current-Pulsed (note 1) IDM -27 A Power Dissipation(note 2) PD 1.4 W Thermal Resistance from Junction to Ambient (note 2) RθJA 89 ℃/W Operation Junction and Storage Temperature Range TJ,TSTG -55~+150 ℃ www.jscj-elec.com 1 Rev. - 2.2 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA On characteristics Drain-source on-resistance RDS(on) (note 1) Forward tranconductance (note 1) Gate threshold voltage Dynamic characteristics gFS VGS(th) 41 50 mΩ VGS =-4.5V, ID = -3.5A 47 60 mΩ VGS =-2.5V,ID= -2.5A 60 85 mΩ 7 VDS =-5V, ID =-5A VDS =VGS, ID =-250µA S -0.7 -1.3 V (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching characteristics VGS =-10V, ID = -4A VDS =-15V,VGS =0V,f =1MHz 1050 pF 127 pF 85 pF (note 3) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall Time td(on) tr td(off) 6.5 ns VGS=-10V,VDS=-15V, 3.5 ns RL=3.6Ω,RGEN=6Ω 40 ns 13 ns -1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) VSD IS=-1A,VGS=0V Note : 1. Pulse Test : Pulse width≤300µs, duty cycle≤2%. 2. Device mounted on 1"×1" FR-4 PCB with high coverage 2oz Copper ,double sided. 3. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 2.2 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics -18 -20 VGS=-3V,-4V,-5V Ta=25℃ VGS=-2.5V -14 ID (A) -12 DRAIN CURRENT ID Pulsed (A) -16 DRAIN CURRENT VDS=-3V -16 Pulsed VGS=-2V -8 -10 Ta=100℃ -8 -6 -4 -4 VGS=-1.5V -0 Ta=25℃ -12 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE VDS -2 -0 -0.0 -4 -0.5 -1.0 (V) -1.5 -2.0 -2.5 GATE TO SOURCE VOLTAGE -3.0 VGS -3.5 RDS(ON) —— VGS RDS(ON) —— ID 300 80 Ta=25℃ Pulsed Pulsed 70 (m) VGS=-2.5V (m) RDS(ON) 60 VGS=-4.5V 50 ON-RESISTANCE RDS(ON) ON-RESISTANCE -4.0 (V) 40 VGS=-10V ID=-4.2A 200 Ta=100℃ 100 30 Ta=25℃ 20 -1 -2 -3 -4 DRAIN CURRENT ID 0 -5 -0 (A) -1 -2 -3 -4 -5 -6 GATE TO SOURCE VOLTAGE -7 VGS -8 -9 -10 (V) Threshold Voltage IS —— VSD -5 -1.2 -1.0 THRESHOLD VOLTAGE VTH IS (A) (V) Pulsed SOURCE CURRENT -1 Ta=100℃ -0.1 -0.0 -0.4 Ta=25℃ -0.8 -1.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.6 ID=-250uA -0.8 -0.6 -0.4 25 -2.0 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) Rev. - 2.2 -3L   Symbol A A1 A2 b c D E1 E e e1 L Κ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Max. Min. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° -3L    NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.2 -3L   www.jscj-elec.com 5 Rev. - 2.2