MMDT2907A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-363 Plastic-Encapsulate Transistors MMDT2907A DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURE z Complementary NPN Type available MMDT2222A MARKING: K2F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= -10μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -10 nA Collector cut-off current ICEX VCE=-30V,VEB(off)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -10 nA hFE(1) VCE=-10V, IC= -0.1mA 75 hFE(2) VCE=-10V, IC= -1mA 100 hFE(3) VCE=-10V, IC=-10mA 100 hFE(4) VCE=-10V, IC= -150mA 100 hFE(5) VCE=-10V, IC=-500mA 50 VCE(sat)1 IC=-150mA, IB=-15mA -0.4 V VCE(sat)2 IC=-500mA, IB=- 50mA -1.6 V VBE(sat)1 IC=-150mA, IB=-15mA -1.3 V VBE(sat)2 IC=-500mA, IB= -50mA -2.6 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 Transition frequency fT Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 8 pF Input Capacitance Cib VEB=-2V, IC= 0,f=1MHz 30 pF 10 ns 40 ns VCE=-20V, IC= -50mA,f=100MHz 200 MHz Delay time td Rise time tr Storage time ts VCC=-6V, IC=-150mA, 225 ns Fall time tf IB1= IB2= -15mA 60 ns www.cj-elec.com VCC=-30V,IC=-150mA, IB1=-15mA 1 E,Mar,2016 Typical Characteristics hFE Static Characteristic -0.25 500 —— IC COMMON EMITTER VCE=-10V -800uA -0.20 hFE -640uA -0.15 DC CURRENT GAIN COLLECTOR CURRENT 400 -720uA IC (A) COMMON EMITTER Ta=25℃ -560uA -480uA -0.10 -400uA -320uA -240uA -0.05 300 Ta=100℃ Ta=25℃ 200 100 -160uA IB=-80uA -0.00 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -0.9 —— -10 VCE 0 -0.1 -12 -10 COLLECTOR CURRENT IC VBEsat -1.2 β=10 -100 IC -0.6 Ta=100℃ -0.3 Ta=25℃ -0.0 —— IC Ta=25℃ -0.8 Ta=100℃ -0.4 -0.0 -10 -1 -100 COLLECTOR CURRENT IC IC -10 -1 -600 (mA) -100 COLLECTOR CURRENT —— VBE 100 -600 Cob/ Cib IC —— VCB/ VEB f=1MHz IE=0/ IC=0 (pF) (mA) IC Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 Pc —— 10 1 -0.1 -1.0 BASE-EMMITER VOLTAGE VBE (V) 300 Cob C Ta=100℃ CAPACITANCE COLLECTOR CURRENT Ta=25℃ Cib -100 -10 -600 (mA) COMMON EMITTER VCE=-10V COLLECTOR POWER DISSIPATION Pc (mW) -600 (mA) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 (V) -1 REVERSE VOLTAGE -10 V -20 (V) Ta 200 100 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 E,Mar,2016 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 3 E,Mar,2016 SOT-363 Tape and Reel www.cj-elec.com 4 E,Mar,2016