2SC4617

S MD Type General purpose transistor 2SC4617 Transistors SOT-523 +0.1 1.6-0.1 Unit: mm Features Low Cob : Cob=2.0pF (Typ.) 2 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 NPN silicon transistor +0.05 0.8-0.05 +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 0.55 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 7 0.15 0.15 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE IC=50ìA IC=1mA IE=50ìA VCB=60V VEB=7V VCE=6V, IC=1mA 120 Testconditons Min 60 50 7 0.1 0.1 560 0.4 2 180 3.5 V pF MHz Typ Max Unit V V V A A VCE(sat) IC/IB=50mA/5mA Cob fT VCE=12V, IE=0A, f=1MHz VCE=12V, IE=-2mA, f=100MHz hFE Classification Marking Rank hFE 120 BQ Q 270 180 BR R 390 270 BS S 560 www.kexin.com.cn 1 S MD Type 2SC4617 Typlcal Characteristics Transistors Fig.1 Grounded Emitter Propagation Characteristics Fig.2 Grounded Emitter Output Characteristics Fig.3 Grounded Emitter Output Characteristics Fig.4 DC Current Gain vs. Collector Current Fig.5 DC Current Gain vs. Collector Current Fig. 6 Collector Emitter Saturation Voltage vs. Collector Current Fig.7 Collector Emitter Saturation Voltage vs. Collector Current Fig.8 Collector Emitter Saturation Voltage vs. Collector Current Fig.9 Gain Bandwidth Product vs. Emitter Current 2 www.kexin.com.cn S MD Type 2SC4617 Transistors Fig.11 Base-Collector Time Constant Fig.10 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage vs. Emitter Current www.kexin.com.cn 3