LTC5535
Precision 600MHz to 7GHz,
RF Detector with
Adjustable Gain and
12MHz Baseband Bandwidth
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DESCRIPTIO
FEATURES
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Temperature Compensated Internal Schottky
Diode RF Detector
Wide Input Frequency Range: 600MHz to 7GHz*
Wide Input Power Range: –32dBm to 10dBm
External Gain Control
Precision VOUT Offset Control
Low Starting Voltage: 200mV for Gain = 2
Wide VCC Range of 2.7V to 5.5V
Low Operating Current: 2mA
Available in a Low Profile (1mm) SOT-23 Package
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APPLICATIO S
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802.11a, 802.11b, 802.11g, 802.15, 802.16
Multimode Mobile Phone Products
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the VOUT pin.
The LTC5535 output amplifier gain is set via external
resistors. The initial starting voltage of 200mV can be
precisely adjusted using the VOS pin.
The LTC5535 operates with input power levels from
–32dBm to 10dBm. The 12MHz baseband bandwidth is
much higher than that of previous Schottky detector
products.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
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The LTC®5535 is an RF power detector for RF applications
operating in the 600MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and output
amplifier are combined in a small ThinSOTTM package. The
supply voltage range is optimized for operation from a
single cell lithium-ion or three cell NiMH battery.
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3600
33pF
RF
INPUT
1
LTC5535
VCC 6
RFIN
VCC
100pF
2
VOS
REFERENCE
3
GND
VOUT
5
VM
5535 TA01
VCC = 3.6V
3200 TA = 25°C
GAIN = 2
2800 VOS = 0V
2400
2000
1600
RA
VOS
0.1µF
VOUT OUTPUT VOLTAGE (mV)
600MHz to 7GHz RF Power Detector
4
RB
2GHz
600MHz
1GHz
5GHz
6GHz
7GHz
1200
4GHz
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 TA02
5535f
1
LTC5535
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ABSOLUTE
AXI U RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
VCC, VOUT, VM, VOS .............................................. –0.3V to 6V
RFIN Voltage ...................................(VCC ± 1.5V) to 6.5V
RFIN Power (RMS) .............................................. 12dBm
IVOUT .................................................................... 25mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
TOP VIEW
RFIN 1
6 VCC
GND 2
5 VOUT
VOS 3
4 VM
LTC5535ES6
S6 PART
MARKING
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 250°C/W
LBHK
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 500Ω, VOS = 0V unless
otherwise noted.
PARAMETER
CONDITIONS
MIN
●
VCC Operating Voltage
IVCC Operating Current
VOUT Output Current
2.7
●
IVOUT = 0mA
●
VOUT VOL (No RF Input)
VOUT = 1.75V, VCC = 2.7V to 5.5V, ∆VOUT < 10mV
TYP
MAX
UNITS
5.5
V
2
3.5
mA
150
180 to 220
250
mV
10
20
mA
VOUT Bandwidth
CLOAD = 33pF, RLOAD = 2k, PIN = –10dBm (Note 4)
VOUT Load Capacitance
(Note 6)
VOUT Slew Rate
VRFIN = 1V Step, CLOAD = 33pF (Note 3)
50
V/µs
VOUT Noise
VCC = 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination,
50Ω AC Output Termination
1
mVP-P
VOS Voltage Range
VOS Input Current
VOS = 1V
VM Voltage Range
VM Input Current
12
●
VM = 3.6V
RFIN Input Frequency Range
MHz
33
●
0
●
●
●
pF
1
V
–0.5
0.5
µA
0
VCC -1. 8
V
–0.5
0.5
µA
600 to 7000
MHz
–32 to 10
dBm
RFIN Input Power Range
RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V
RFIN AC Input Resistance
F = 1000MHz, Pin = –25dBm
220
Ω
RFIN Input Shunt Capacitance
F = 1000MHz, Pin = –25dBm
0.65
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at VOUT is measured between 1.3V and 2.3V.
Note 4: See Table 1 in Applications Information section.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
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LTC5535
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TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage
SUPPLY CURRENT (mA)
VOUT OUTPUT VOLTAGE (mV)
TA = 85°C
TA = 25°C
TA = –40°C
VCC = 3.6V
3200
TA = 85°C
2.6
210
3600
RF INPUT SIGNAL OFF
VOUT OUTPUT VOLTAGE (mV)
2.8
GAIN = 2
VOS = 0V
215 RF INPUT SIGNAL OFF
200
Typical Detector Characteristics,
600MHz, Gain = 2, VOS = 0V
Supply Current vs Supply Voltage
220
205
(RLOAD = 1k = RA + RB)
2.4
TA = 25°C
2.2
2800
TA = –40°C
2400
2000
TA = 25°C
1600
1200
2.0
TA = –40°C
1.8
195
TA = 85°C
800
400
190
2.5
3
4.5
4
5
3.5
SUPPLY VOLTAGE (V)
5.5
1.6
2.5
6
3
4.5
4
5
3.5
SUPPLY VOLTAGE (V)
5.5
5535 G02
5535 G01
3600
VCC = 3.6V
3600
VCC = 3.6V
TA = –40°C
2400
2000
TA = 25°C
1600
2800
TA = –40°C
2400
2000
TA = 25°C
1600
1200
800
TA = 85°C
800
400
5535 G04
3600
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
Typical Detector Characteristics,
6000MHz, Gain = 2, VOS = 0V
3600
VCC = 3.6V
TA = 25°C
1600
1200
TA = –40°C
2000
1600
TA = 25°C
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G07
2400
TA = –40°C
2000
TA = 25°C
1200
800
400
2800
1600
1200
TA = 85°C
VCC = 3.6V
3200
2800
2400
8 12
5535 G06
VOUT OUTPUT VOLTAGE (mV)
TA = –40°C
TA = 85°C
800
3200
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
3200
800
1200
Typical Detector Characteristics,
5000MHz, Gain = 2, VOS = 0V
VCC = 3.6V
2800
TA = 25°C
5535 G05
Typical Detector Characteristics,
4000MHz, Gain = 2, VOS = 0V
2000
2000
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
TA = –40°C
2400
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
2400
2800
1600
1200
TA = 85°C
VCC = 3.6V
3200
VOUT OUTPUT VOLTAGE (mV)
2800
3600
Typical Detector Characteristics,
3000MHz, Gain = 2, VOS = 0V
3200
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
3200
8 12
5535 G03
Typical Detector Characteristics,
2000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
1000MHz, Gain = 2, VOS = 0V
3600
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
6
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
800
400
8 12
5535 G08
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G09
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LTC5535
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TYPICAL PERFOR A CE CHARACTERISTICS
VOUT vs RF Input Power and VCC,
2000MHz, Gain = 2, VOS = 0V,
TA = 25°C
Typical Detector Characteristics,
7000MHz, Gain = 2, VOS = 0V
3600
5200
4800
VCC = 5V
4400
VCC = 6V
4000
VCC = 4V
3600
3200
VCC = 3V
2800
2400
2000
1600
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8 12
RF INPUT POWER (dBm)
VCC = 3.6V
TA = –40°C
2400
2000
TA = 25°C
1600
1200
800
TA = 85°C
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
3200
2800
(RLOAD = 1k = RA + RB)
8 12
5535 G11
5535 G10
VOUT vs RF Input Power and VOS,
2000MHz, Gain = 2
Typical Detector Characteristics,
2000MHz, Gain = 4, VOS = 0V
4000
3600
3600
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
VCC = 3.6V
3200 TA = 25°C
2800
VOS = 1V
2400
2000
VOS = 0.5V
1600
VCC = 3.6V
3200
TA = –40°C
2800
2400
TA = 25°C
2000
1600
1200
1200
800
VOS = 0V
400
TA = 85°C
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
8
5535 G13
5535 G12
Time Domain Response at
fRF = 1900MHz, PRF = 0dBm
Time Domain Response at
fRF = 1900MHz, PRF = –10dBm
ASK
MODULATION
SIGNAL
100mV/DIV
ASK
MODULATION
SIGNAL
500mV/DIV
OUTPUT
200mV/DIV
OUTPUT
500mV/DIV
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
100ns/DIV
5535 G14
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
100ns/DIV
5535 G15
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LTC5535
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TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power
at 600MHz
VOUT Slope vs RF Input Power
at 1000MHz
1000
100
TA = –40°C
TA = 25°C
1000
VCC = 3.6V
GAIN = 2
VOS = 0V
100
TA = –40°C
TA = 25°C
10
TA = 85°C
TA = 85°C
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
5
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
10
VOUT SLOPE (mV/dB)
100
TA = 25°C
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
5
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
10
TA = –40°C
10
TA = 25°C
TA = 85°C
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
10
10
VCC = 3.6V
GAIN = 2
VOS = 0V
100
10
TA = –40°C
TA = 25°C
TA = 85°C
0
–30 –25 –20 –15 –10 –5
0
RF INPUT POWER (dBm)
VOUT SLOPE (mV/dB)
100
TA = 25°C
TA = 85°C
5
5
10
5535 G21
VOUT Slope vs RF Input Power
at 7000MHz
1000
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
10
5535 G18
5535 G20
VCC = 3.6V
GAIN = 2
VOS = 0V
TA = –40°C
5
5
VOUT Slope vs RF Input Power
at 5000MHz
100
VOUT Slope vs RF Input Power
at 6000MHz
10
TA = 25°C
10
1000
5535 G19
1000
5
VCC = 3.6V
GAIN = 2
VOS = 0V
TA = 85°C
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
1000
VCC = 3.6V
GAIN = 2
VOS = 0V
TA = –40°C
TA = –40°C
VOUT Slope vs RF Input Power
at 4000MHz
VOUT Slope vs RF Input Power
at 3000MHz
10
100
5535 G17
5535 G16
1000
VCC = 3.6V
GAIN = 2
VOS = 0V
TA = 85°C
VOUT SLOPE (mV/dB)
10
VOUT Slope vs RF Input Power
at 2000MHz
VOUT SLOPE (mV/dB)
VCC = 3.6V
GAIN = 2
VOS = 0V
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
1000
(RLOAD = 1k = RA + RB)
10
5535 G22
VCC = 3.6V
GAIN = 2
VOS = 0V
100
10
TA = 25°C
TA = –40°C
TA = 85°C
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
5
10
5535 G23
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LTC5535
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25 dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
GHz
RESISTANCE
(Ω)
REACTANCE
(Ω)
FREQUENCY
GHz
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.600
156.68
–127.09
5.592
24.09
12.74
0.728
135.50
–122.64
5.720
24.60
15.21
0.856
118.45
–116.93
5.848
25.20
17.55
0.984
104.52
–110.97
5.976
26.02
19.70
1.112
92.64
–105.02
6.104
26.80
21.46
1.240
83.35
–98.29
6.232
27.27
22.90
1.368
75.36
–92.40
6.360
27.22
24.41
1.496
68.73
–86.52
6.488
26.98
26.35
1.624
63.20
–80.86
6.616
26.79
28.58
1.752
58.56
–75.65
6.744
26.75
31.11
1.880
54.68
–70.56
6.872
26.85
33.76
2.008
51.40
–65.59
7.000
27.06
36.48
2.136
49.37
–60.89
2.264
47.90
–57.97
2.392
44.55
–55.20
2.520
41.81
–51.32
2.648
39.91
–47.76
2.776
38.28
–44.50
2.904
37.15
–41.35
3.032
35.94
–38.47
3.160
34.94
–35.89
3.288
33.78
–33.39
3.416
32.33
–30.93
3.544
31.04
–28.47
3.672
29.80
–25.80
3.800
28.71
–23.12
3.928
27.85
–20.43
4.056
27.29
–18.04
4.184
26.34
–15.61
4.312
25.48
–13.05
4.440
24.95
–10.41
4.568
24.50
–7.76
4.696
23.95
–5.20
4.824
23.67
–2.56
4.952
23.47
0.03
5.080
23.40
2.59
5.208
23.39
5.13
5.336
23.50
7.64
5.464
23.72
10.20
S11 Forward Reflection
Impedance
0.6000GHz-7.000GHz
5535 TA03
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LTC5535
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
(GHz)
RESISTANCE
(Ω)
REACTANCE
(Ω)
FREQUENCY
GHz
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.600
176.00
–174.00
5.592
21.80
7.14
0.728
148.00
–165.00
5.720
22.10
9.55
0.856
125.00
–153.00
5.848
22.70
12.00
0.984
108.00
–143.00
5.976
23.60
14.40
1.112
94.80
–133.00
6.104
24.20
15.90
1.240
83.20
–123.00
6.232
24.70
17.80
1.368
74.60
–115.00
6.360
24.70
19.30
1.496
67.50
–107.00
6.488
24.30
21.40
1.624
61.40
–99.00
6.616
24.10
23.80
1.752
56.80
–92.90
6.744
24.00
26.30
1.880
52.70
–86.10
6.872
24.00
28.80
2.008
49.30
–80.00
7.000
24.10
31.40
2.136
47.10
–74.40
2.264
45.30
–70.00
2.392
42.40
–66.70
2.520
39.60
–62.30
2.648
37.70
–58.60
2.776
36.30
–55.00
2.904
35.10
–51.00
3.032
34.00
–47.70
3.160
33.20
–44.60
3.288
32.10
–41.80
3.416
30.70
–39.50
3.544
29.10
–36.70
3.672
27.70
–33.70
3.800
26.60
–30.60
3.928
25.70
–27.70
4.056
25.00
–25.10
4.184
24.10
–22.10
4.312
23.50
–19.50
4.440
22.90
–17.10
4.568
22.40
–14.00
4.696
22.00
–11.40
4.824
21.70
–8.83
4.952
21.30
–5.99
5.080
21.20
–3.45
5.208
21.20
–0.77
5.336
21.20
1.70
5.464
21.40
4.46
S11 Forward Reflection
Impedance
0.6000GHz-7.000GHz
5535 TA04
5535f
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LTC5535
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PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 600MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
VM (Pin 4): Negative Input to Output Amplifier.
VOUT (Pin 5): Detector Output.
VCC (Pin 6): Power Supply Voltage, 2.7V to 5.5V. VCC should
be bypassed appropriately with ceramic capacitors.
GND (Pin 2): Ground.
VOS (Pin 3): VOUT Offset Voltage Adjustment. From 0V to
200mV, VOUT does not change. Above 200mV, VOUT will
track VOS.
W
BLOCK DIAGRA
RFSOURCE
12pF TO 200pF
(DEPENDING ON
APPLICATION)
VCC
6
VP
+
5
VOUT
4
VM
3
VOS
–
500Ω
RFIN
OUTPUT
AMPLIFIER
1
500Ω
BIAS
7.5k
5pF
7.5k
50µA
GND 2
50µA
+
RF DET
AMPLIFIER
+
20k
–
–
20k
200mV
+
5535 BD
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LTC5535
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APPLICATIO S I FOR ATIO
The VOS input controls the DC input voltage to the output
amplifier. VOS must be connected to ground if the DC
output voltage is not to be changed. The output amplifier
is initially trimmed to 200mV (Gain = 2) with VOS connected to ground.
Operation
The LTC5535 RF detector integrates several functions to
provide RF power detection over frequencies ranging
from 600MHz to 7GHz. These functions include an internal
frequency compensated output amplifier, an RF Schottky
diode peak detector and a level shift amplifier to convert the
RF input signal to DC. The LTC5535 has both gain setting
and voltage offset adjustment capabilities.
The VOS pin is used to change the initial VOUT starting
voltage. This function, in combination with gain adjustment enables the LTC5535 output to span the input range
of a variety of analog-to-digital converters. VOUT will not
change until VOS exceeds 200mV. The starting voltage at
VOUT for VOS >200mV is:
Output Amplifier
The output amplifier is capable of supplying typically
20mA into a load. The negative terminal VM is brought out
to a pin for gain selection. External resistors connected
between VOUT and VM (RA) and VM to ground (RB) will set
the gain of this amplifier.
VOUT = 0.5 • VOS • Gain
where gain is the output amplifier gain. For a gain of 2,
VOUT will exactly track VOS above 200mV.
Gain = 1 + RA/RB
RF Detector
The amplifier is not unity gain stable; a minimum gain of
two is required. The output amplifier has a bandwidth of
20MHz with a gain of 2. For increased gain applications,
the bandwidth is reduced according to the formula:
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 50µA and drives a
5pF internal peak detector capacitor.
Bandwidth = 40MHz/(Gain) = 40MHz • RB/(RA + RB)
For stable operation the gain setting resistors should be
low values and the board capacitance on VM should be
minimized. RB is recommended to be no greater than
500Ω for all gain settings.
Demo Board Schematic
VCC
2.7V TO 5.5V
RFIN
C4
39pF
1
R1
(OPT)
2
3
OFFSET
ADJUSTMENT
C1
0.1µF
LTC5535ES6
RFIN
VCC
GND VOUT
VOS
VM
6
C2
100pF
5
4
VOUT
R2
500Ω
1%
RLOAD
(OPT)
R3
500Ω
1%
GND
5535 DB
5535f
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LTC5535
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APPLICATIO S I FOR ATIO
Applications
The LTC5535 can be used as a self-standing signal strength
measuring receiver for a wide range of input signals from
–32dBm to 10dBm for frequencies from 600MHz to 7GHz.
The LTC5535 offers increased baseband bandwidth compared to other Schottky diode detectors. Table 1 shows
that the baseband (demodulation) bandwidth is typically
12MHz at an RF input signal level of –10dBm. The baseband
bandwidth is largely independent of the RF input signal
frequency over the range of 600MHz to 7GHz.
Operation at higher RF input frequencies is achievable.
Consult factory for more information.
The LTC5535 can be used as a demodulator for AM and
ASK modulated signals. Depending on specific application
needs, the RSSI output can be split between two branches,
providing AC-coupled data (or audio) output and a
DC-coupled RSSI output for signal strength measurements and AGC.
Table 1
INPUT LEVEL
(dBm)
OUTPUT BW
–3dB (MHz)
FREQUENCY
(GHz)
–20
12.5
3
2
–10
12
3
2
–5
11
3
2
0
9.5
3
2
GAIN
5535f
10
LTC5535
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62
MAX
2.90 BSC
(NOTE 4)
0.95
REF
1.22 REF
3.85 MAX 2.62 REF
1.4 MIN
2.80 BSC
1.50 – 1.75
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
0.01 – 0.10
1.00 MAX
DATUM ‘A’
0.30 – 0.50 REF
0.09 – 0.20
(NOTE 3)
1.90 BSC
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5535f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LTC5535
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT®5511
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
DC-3GHz High Signal Level Downconverting Mixer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5514
Ultralow Distortion IF Amplifier/ADC Driver
Digitally Controlled Gain, 47dBm OIP3 at 100MHz
LT5515
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517
40MHz to 900MHz Direct Conversion Quadrature Demodulator
21dBm IIP3, Integrated LO Quadrature Generator
LT5519
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5520
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5521
Very High Linearity Active Mixer
24dBm IIP3, –42dBm LO Leakage at 1950MHz
LT5522
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
Infrastructure
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
100kHz to 1000MHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534
50MHz to 3GHz RF Power Detector
60dB Dynamic Range, Temperature Compensated
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
LT5506
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
LT5546
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V
Supply, –7dB to 56dB Linear Power Gain
RF Power Controllers
LTC1757A
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1758
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1957
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC4400
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4402
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 450kHz Loop BW
LTC4403
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
5535f
12
Linear Technology Corporation
LT/TP 07 04 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2004
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