MRF1090MB

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1090MB/D The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF1090MB 90 W PEAK, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 332A–03, STYLE 1 MAXIMUM RATINGS Rating Collector–Base Voltage Emitter–Base Voltage Collector–Current — Peak (1) Total Device Dissipation @ TC = 25°C (1) (2) Derate above 25°C Storage Temperature Range Symbol VCBO VEBO IC PD Tstg Value 70 4.0 6.0 290 1.66 –65 to +150 Unit Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 — — — — — — — — 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (4) (IC = 2.5 Adc, VCE = 5.0 Vdc) hFE 10 30 — — NOTES: (continued) 1. Pulse Width = 10 µs, Duty Cycle = 1%. 2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. 4. 80 µs Pulse on Tektronix 576 or equivalent. REV 0 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob — 12 16 pF FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%) Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz) Load Mismatch (VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB η ψ No Degradation in Power Output 8.4 35 10.8 40 — — dB % + C2 L1 L2 C3 C4 + - 50 Vdc RF INPUT Z1 Z2 Z3 Z4 DUT Z5 Z6 Z7 Z8 C1 RF OUTPUT Z9 C1, C2 — 220 pF Chip Capacitor, 100–mil ATC C3 — 0.1 µF C4 — 47 µF/75 V L1, L2 — 3 Turns #18 AWG, 1/8″ ID Z1–Z9 — Distributed Microstrip Elements, See Photomaster Board Material — 0.031″ Thick Glass Teflon, εr = 2.5 Figure 1. 1090 MHz Test Circuit 120 Pout , OUTPUT POWER (WATTS pk) 100 1090 MHz 80 60 40 20 1215 MHz Pout , OUTPUT POWER (WATTS pk) f = 960 MHz 120 Pin = 10.5 W pk 100 80 60 40 20 VCC = 50 V tp = 10 µs D = 1% 960 1090 f, FREQUENCY (MHz) 9 W pk 7.5 W pk 6 W pk 4.5 W pk VCC = 50 V tp = 10 µs D = 1% 0 3 6 9 Pin, INPUT POWER (WATTS pk) 12 15 1215 Figure 2. Output Power versus Input Power REV 0 Figure 3. Output Power versus Frequency 2 120 Pout , OUTPUT POWER (WATTS pk) 100 80 60 40 4.5 W pk 20 0 5 10 20 30 15 25 35 VCC, SUPPLY VOLTAGE (VOLTS) 40 45 50 6 W pk f = 1090 MHz tp = 10 µs D = 1% Pin = 10.5 W pk G PB , POWER GAIN (dB) 9 W pk 7.5 W pk 13 12 11 10 9 8 Po = 90 W pk VCC = 50 V tp = 10 µs D = 1% 960 1090 f, FREQUENCY (MHz) 1215 Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency 0 +j5.0 +j10 Pout = 90 W pk VCC = 50 V tp = 10 µs D = 1% +j15 f MHz 960 1090 1215 Zin Ohms 2.8 + j13.2 7.4 + j11.4 4.7 + j7.5 ZOL* Ohms 7.6 + j3.5 7.6 + j4.0 7.7 + j4.5 5.0 ZOL* 1090 1215 1215 Zin 1090 f = 960 MHz 10 f = 960 MHz +j20 15 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = output operates at a given output ZOL* = power, voltage, and frequency. Coordinates in Ohms Figure 6. Series Equivalent Input/Output Impedance Po = 90 W pk VCC = 50 V tp = 10 µs D = 1% f = 1090 MHz Figure 7. Typical Pulse Performance REV 0 3 PACKAGE DIMENSIONS F 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A C D F H J K INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105 0.050 0.070 0.003 0.007 0.600 --BASE EMITTER BASE COLLECTOR MILLIMETERS MIN MAX 6.86 7.36 2.93 3.42 4.96 5.20 2.42 2.66 1.27 1.77 0.08 0.17 15.24 --- K D H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. 4. CASE 332A–03 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 0 4