MRF587

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF587/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain — GU(max) = 16.5 dB (Typ) @ f = 500 MHz • Ion Implanted • All Gold Metal System • High fT — 5.5 GHz • Low Intermodulation Distortion: TB3 = –70 dB DIN = 125 dB µV • Nichrome Emitter Ballast Resistors MRF587 NF = 3.0 dB @ 0.5 GHz HIGH–FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 50°C Derate above TC = 50°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 17 34 2.5 200 5.0 33 – 65 to +150 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C CASE 244A–01, STYLE 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IC = 0, IE = 0.1 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 17 34 2.5 — — — — — — — — 50 Vdc Vdc Vdc µAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 5.0 Vdc) NOTE: 1. 300 µs pulse on Tektronix 576 or equivalent. hFE 50 — 200 — (continued) REV 6 1 MRF587 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 90 mAdc, VCE = 15 Vdc, f = 0.5 GHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Ccb — — 5.5 1.7 — 2.2 GHz pF FUNCTIONAL TESTS Narrowband — Figure 15 (IC = 90 mA, VCC = 15 V, f = 0.5 GHz) Noise Figure Power Gain at Optimum Noise Figure Broadband — Figure 16 (IC = 90 mA, VCC = 15 V, f = 0.3 GHz) Noise Figure Power Gain at Optimum Noise Figure Triple Beat Distortion (IC = 50 mA, VCC = 15 V, PRef = 50 dBmV) (IC = 90 mA, VCC = 15 V, PRef = 50 dBmV) DIN 45004 (IC = 90 mA, VCC = 15 V) (IC = 90 mA, VCC = 15 V) Maximum Available Power Gain (3) (IC = 90 mA, VCE = 15 Vdc, f = 0.5 GHz) NOTES: 2. Characterized on HP8542 Automatic Network Analyzer 3. GUmax = |S21|2 (1–|S11|2)(1–|S22|2) dB NF GNF — 11 3.0 13 4.0 — dB NF GNF TB3 — — — 6.3 11 –70 — — — dB DIN — 125 — dBµV GUmax — 16.5 — dB 10 9 8 NF, NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0.1 0.2 0.3 0.5 f, FREQUENCY (GHz) 0.7 N.F. GNF VCE = 15 V IC = 90 mA 30 24 21 18 15 12 9 6 3 0 0.9 10 G NF , GAIN AT NOISE FIGURE (dB) 27 6 5 4 3 2 1 VCE = 15 V f = 300 MHz NF, NOISE FIGURE (dB) 0 50 100 150 IC, COLLECTOR CURRENT (mA) 200 Figure 1. Typical Noise Figure and Associated Gain versus Frequency Figure 2. Noise Figure versus Collector Current REV 6 2 GUmax, MAXIMUM AVAILABLE POWER GAIN (dB) 20 16 12 8 4 0 f T, GAIN BANDWIDTH PRODUCT (GHz) f = 500 MHz VCE = 15 V 6 VCE = 15 V 5 4 3 2 1 f = 1000 MHz 0 50 100 150 IC, COLLECTOR CURRENT (mA) 200 0 50 100 150 IC, COLLECTOR CURRENT (mA) 200 Figure 3. GUmax versus Collector Current Figure 4. Gain–Bandwidth Product versus Collector Current TYPICAL PERFORMANCE 7 6 5 4 3 2 VCC = 15 V f = 300 MHz CAPACITANCE (pF) 10 7 5 Cob NF, NOISE FIGURE (dB) 3 2 CIRCUIT PER FIGURE 16 Ccb 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 120 1 1 3 5 2 VCB, COLLECTOR BASE VOLTAGE (V) 7 10 Figure 5. Broadband Noise Figure Figure 6. Junction Capacitance versus Voltage 80 Vout , OUTPUT VOLTAGE (dBmV) 76 72 68 64 60 VCC = 15 V f = 200 MHz CIRCUIT PER FIGURE 16 31 29 Pout , OUTPUT POWER (dBm) 27 25 23 21 19 17 15 13 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 11 120 Pout , OUTPUT POWER (dBm) 60 50 40 30 20 10 3RD ORDER INTERCEPT +1 dB COMP. PT. CIRCUIT PER FIGURE 16 f1 = 205 MHz f2 = 211 MHz VCC = 15 V IC = 90 mA 0 10 20 30 40 50 Pin, INPUT POWER (dBm) 60 70 80 Figure 7. 1.0 dB Compression Point versus Collector Current Figure 8. Third Order Intercept Point REV 6 3 TYPICAL PERFORMANCE (continued) -48 -52 IMD, DISTORTION (dB) -56 -60 -64 CH2 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 120 VCE = 15 V PRef = 50 dBmV CIRCUIT PER FIGURE 16 TEST PER FIGURE 17 -60 -64 TB3 , DISTORTION (dB) -68 -72 -76 -80 70 TEST PER FIGURE 18 VCC = 15 V PRef = 50 dBmV @ 200 MHz CIRCUIT PER FIGURE 16 CHR CH13 80 90 100 IC, COLLECTOR CURRENT (mA) 110 120 Figure 9. Second Order Distortion versus Collector Current Figure 10. Triple Beat Distortion versus Collector Current -10 -20 -30 CH13 -40 -50 -60 40 CIRCUIT PER FIGURE 16 TEST PER FIGURE 19 VCC = 15 V PRef = 50 dBmV VRef , OUTPUT VOLTAGE (dB µV) 140 VCC = 15 V 130 120 110 100 90 40 CIRCUIT PER FIGURE 16 TEST PER FIGURE 20 XMD 35, DISTORTION (dB) 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 120 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 120 Figure 11. 35–Channel X–Modulation Distortion versus Collector Current Figure 12. DIN 45004B versus Collector Current REV 6 4 +j50 +j25 +j100 +j150 +j10 1 S11 0.8 10 0.6 0.4 0.2 VCE = 15 V IC = 90 mA 90° 120° S21 f = 0.1 GHz 60° 150° 0.2 +j250 +j500 25 50 100 150 250 500 0 180° -j500 25 20 15 10 5 1 0.4 0.6 0.6 0.4 1 f = 0.1 GHz 0.1 0.2 0.8 30° S12 0.3 0.4 0.5 0° 0.6 -j10 f = 0.1 GHz 0.4 0.2 0.8 1 f = 0.1 GHz S22 -j250 -j150 -150° -120° -60° -90° -30° -j25 -j50 -j100 Figure 13. Input/Output Reflection Coefficient versus Frequency (GHz) Figure 14. Forward/Reverse Transmission Coefficients versus Frequency (GHz) VCE (Volts) 5.0 IC (mA) 30 f (MHz) 100 200 400 600 800 1000 100 200 400 600 800 1000 100 200 400 600 800 1000 100 200 400 600 800 1000 100 200 400 600 800 1000 100 200 400 600 800 1000 S11 |S11| 0.56 0.58 0.60 0.64 0.67 0.70 0.53 0.56 0.59 0.63 0.66 0.69 0.52 0.56 0.59 0.63 0.66 0.69 0.53 0.53 0.55 0.59 0.62 0.65 0.49 0.51 0.53 0.58 0.60 0.63 0.48 0.50 0.53 0.57 0.60 0.63 ∠φ –131 –159 –178 170 162 155 –141 –164 178 169 161 155 –145 –166 177 168 161 155 –122 –153 175 173 165 158 –132 –158 –178 171 164 157 –135 –160 –179 171 164 157 |S21| 16.45 9.42 5.00 3.61 2.92 2.55 17.89 10.05 5.31 3.82 3.09 2.67 18.26 10.20 5.38 3.86 3.12 2.70 18.36 10.63 5.71 4.16 3.37 2.95 20.19 11.54 6.12 4.43 3.58 3.12 20.82 11.77 6.22 4.50 3.64 3.18 S21 ∠φ 113 98 86 76 67 58 110 97 85 76 67 58 109 96 85 76 67 58 115 100 87 78 68 59 112 99 87 78 68 60 111 98 86 78 68 60 |S12| 0.04 0.06 0.08 0.11 0.14 0.17 0.04 0.05 0.09 0.12 0.15 0.18 0.04 0.05 0.09 0.12 0.15 0.19 0.04 0.05 0.08 0.10 0.13 0.15 0.03 0.05 0.08 0.11 0.14 0.16 0.03 0.05 0.08 0.11 0.14 0.17 S12 ∠φ 45 49 55 56 55 54 50 55 60 59 57 55 52 57 62 60 58 55 48 51 57 58 57 55 51 57 61 60 59 57 53 59 63 62 59 57 |S22| 0.49 0.38 0.35 0.38 0.41 0.44 0.47 0.39 0.38 0.40 0.44 0.47 0.47 0.39 0.39 0.41 0.45 0.48 0.50 0.36 0.33 0.35 0.39 0.42 0.46 0.35 0.33 0.36 0.40 0.44 0.45 0.34 0.33 0.36 0.41 0.44 S22 ∠φ –91 –116 –132 –138 –144 –152 –102 –126 –141 –146 –153 –160 –106 –130 –144 –149 –155 –162 –75 –96 –112 –119 –127 –136 –85 –107 –123 –129 –136 –144 –88 –111 –126 –131 –139 –147 (continued) 60 90 10 30 60 90 Table 1. Common–Emitter S–Parameters REV 6 5 VCE (Volts) 15 IC (mA) 30 f (MHz) 100 200 400 600 800 1000 100 200 400 600 800 1000 100 200 400 600 800 1000 S11 |S11| 0.49 0.52 0.48 0.52 0.53 0.53 0.45 0.49 0.45 0.50 0.51 0.51 0.44 0.48 0.44 0.50 0.51 0.51 ∠φ –112 –145 –164 –174 177 168 –122 –150 –166 –175 177 168 –127 –152 –167 –176 176 168 |S21| 20.34 11.51 6.12 4.19 3.29 2.76 22.14 12.24 6.45 4.42 3.47 2.91 22.76 12.44 6.55 4.47 3.51 2.95 S21 ∠φ 118 101 87 75 68 61 115 99 86 75 68 62 114 98 85 75 69 62 |S12| 0.04 0.05 0.09 0.12 0.16 0.20 0.03 0.05 0.09 0.13 0.16 0.20 0.03 0.05 0.09 0.13 0.17 0.20 S12 ∠φ 54 56 63 62 61 56 56 60 65 63 61 55 58 62 66 64 61 55 |S22| 0.51 0.36 0.32 0.32 0.38 0.47 0.45 0.33 0.30 0.32 0.38 0.46 0.43 0.32 0.29 0.32 0.38 0.46 S22 ∠φ –52 –77 –74 –90 –90 –90 –60 –86 –83 –99 –98 –96 –62 –89 –85 –102 –100 –98 60 90 Table 1. Common–Emitter S–Parameters (continued) R1 C5 + C7 Y3 VBB VCC RFC1 Y4 C8 + C6 TL3 TL4 C3 3.68 cm C9 C4 TL1 RF INPUT Y1 C1 3.12 cm C10 DUT TL2 C2 Y2 RF OUTPUT C1, C2 — 470 pF Chip (Ceramic) C3, C4 — 0.018 µF Chip Capacitor C5, C6 — 0.1 µF Mylar C7, C8 — 1.0 µF, 25 Vdc Electrolytic C9 — 91 pF Mini–Unelco (C9 Taped 3.68 cm from C9 — Collector Connection on TL4 as shown) C10 — 35–45 pF Johanson Ceramic Capacitor, JMC C10 — 5801 or Equivalent (C10 Taped 3.12 cm from C10 — Base Connection on TL1) R1 — 2.7 kΩ, 1–1/2 W RFC1 — 0.15 µH Molded Choke TL1, TL2 — Zo = 26 Ω, 0.0625 TFG as shown in TL1, TL2 Photomaster TL3, TL4 — λ/4 Microstrip, Zo = 100 Ω Y1, Y2 — N–Type Connection (Female) Y3, Y4 — BNC–Type Connector (Female) Board Material — 0.0625″ Thick Glass Teflon εr = 2.5 Figure 15. Narrowband Test Fixture Schematic 500 MHz REV 6 6 VBB C4 VCC C5 VCC = 15 V Pg = 11 dB f = 5-375 MHz Zo = 75 Ω RF OUTPUT C6 DUT C7 R2 T2 C3 R3 RF INPUT T1 L1 C2 C1 R1 C8 C1, C7 — 0.5–10 pF C2, C6 — 0.001 µF C3 — 0.01 µF C4, C5 — 0.01 µF Feedthru C8 — 12 pF R1 — 12 Ω 1.0 W (2.0–24 Ω on each emitter port) R2 — 1.8 k 1/8 W R3 — 2.2 k 1/8 W L1 — 1 Turn 0.012 dia #22 AWG T1(1) — 5 Turns Tapped at 2 Turns, #30 AWG T2(1) — 8 Turns Tapped at 3 Turns, #30 AWG (1) Ferroxcube 135 CT050 3D3 Material Figure 16. Broadband Test Circuit Schematic PRef PRef DISTORTION DISTORTION f1 f2 - f1 f1 f2 f1 + f2 f2 f3 Figure 17. Second Order Distortion Test DISTORTION PRef UNMODULATED CARRIER 100% MODULATION 15 kHz Figure 18. Triple Beat Distortion Test VRef -6 dB 199 MHz -60 dB 211 MHz 217 MHz f3 193 MHz f1 205 MHz f2 Figure 19. Cross Modulation Distortion Test REV 6 Figure 20. DIN 45004B Intermodulation Test 7 PACKAGE DIMENSIONS 2 4 3 D 1 DIM A B C D E F J K M P S T U STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 15.24 16.51 0.66 0.86 1.40 1.65 1.52 0.10 0.15 11.17 45° NOM 1.27 2.74 3.35 1.40 1.78 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.600 0.650 0.026 0.034 0.055 0.065 0.060 0.004 0.006 0.440 45° NOM 0.050 0.108 0.132 0.055 0.070 0.115 0.145 K M T A J S F P 8-32 NC 2A SEATING PLANE C WRENCH FLAT E B U EMITTER BASE EMITTER COLLECTOR CASE 244A–01 ISSUE A Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 6 8