UF282OR

RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive .. Mode Device UF2820R Absolute Maximum Ratings at 25°C Parameter Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance 1 Symbol 1 VOS VGS IOS PO Rating 6.5 20 4 61 200 -55 to +150 2.66 Units V V A w “C “C “C/W T TST0 8JC Electrical Characteristics at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Cass CRss GP 00 V,,=28.0 V, F=l .OMHz 30 8 10 50 2O:l PF PF dB % V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, 1,,=100.0 mA, P,fl20.0 V,,=28.0 V, I,,=1 00.0 mA, P,s20.0 V,,=28.0 V, l,,=lOO.O mA, P,e20.0 W, F=500 MHz W, F=500 MHz W, F=500 MHz VSWR-T Specifications Subject to Change Without Notice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 2OW, 28V UF2820R v2.00 Typical Broadband Performance Curves EFFICIENCY I’,,=28 ‘OF GAIN vs FREQUENCY VD,=28 V I,,=1 00 mA PO,,,=20 W vs FREQUENCY W V IDD=l 00 mA PO,=20 10 100 .T I 200 300 FREQUENCY (MHz) 400 5w 100 200 300 FREQUENCY (MHz) 500 POWER OUTPUT 25 vs POWER INPUT mA 25 POWER OUTPUT vs POWER INPUT V,,=28 V I,,=1 00 mA V,,=28 V I,,=100 0 01 0.1 0.2 0.3 0.5 1.0 1.5 2.0 0.1 02 0.3 0.5 1.0 1.5 2.0 POWER INPUT (W) POWER INPUT(W) NOISE FIGURE vs FREQUENCY 00 mA VDo=28 V I,,=1 Specifications Subject to Change Without Notice. IWA-COM, Inc. North America: Tel. Fax (800) (800) 366-2266 618-8883 m Asia/Pacific: Tel. Fax +81 (03) 3226-1671 +81 (03) 3226-1451 m Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 2OW, 28V U F2820R v2.00 Typical Device Impedance Frequency (MHz) 100 200 300 400 500 z,, (OHMS) 8.0-j 16.0 5.5 - j 8.0 4.0 - j 3.8 3.0 - j 2.0 2.0 + J 1.O V,,=28 V, I,,=100 mA, P,,,=20.0 Watts z LoAD (OHMS) 12.O+j6.0 9.3 + j 6.0 6.8 + j 5.5 4.5 + J 4.5 3.0 + j 3.0 Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD the optimum series equivalent load impedance as measured from drain to source. is RF Test Fixture VDD A P VGG VGG J3 0 Q - RF RF IN .Jl PARTS LlS7 c1,c&c10 c7 cz.c5 M w ca c9 Cl1 Cl.2 L1 L2 L3 L4 ls L6 Rl 07 BOARD CAPACITOR CAPACITOR CAPACiTOR CAPACVOR 1QF 2DpF 25pF S4OpF CAPA’XOR SOOPF 0.1 uF CAPACITOR 1ooOpF FEEDTHROUGH MONOLITHIC ELEcTROLYnC 0.25.X CERAMIC CAPACITOR CAPACTOR 5OuF 50 VOLTS 0.63 HAIRPIN. NO. 22 AWG LINE UNE 0.25’ X 0.20’ MICROSTRIP 0.2SX 0.40’ MICROSTRIP 0.30 X 0.06’ HAIRPIN. NO. 16 AWG 6 TURNS OF NC. 20 AWG ON ‘0.30’. CLOSE WOUND 12 NRNS RESISTOR UF262DR FPd o.oe OF NO. 20 AWG ON ‘OLW. CLOSE WOUND 72K OWS 025 WAlT Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020