UF282OP

RF MOSFET Power 100 - 500 MHz Features l l l l l Transistor, 2OW, 28V UF2820P v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband Common Source Configuration Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature I StorageTemperature 1 Thermal Resistance I I V05 VGS IDS PD T, TSTG I 65 20 2.8 53 200 1 -55to+150 I I V v A W “C “C ( I Electrical Characteristics Parameter at 25°C Symbol Min Max Units lest Conditions Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current GateThreshold Voltage Forward Transconductance _Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side Specifications I BV,,, ‘DSS ‘ass VGWHI GM CES Cass CRSS G. / qD I 65 1 2.0 1 2.0 V mA , pA V S pF pF pF I V,,=O.O V, 1,,=4.0 mA‘ V,,=28.0 V, V,,=O.O V’ I I V&20 V&O.0 V&O.0 v, v,,=o.o V’ V, 1,,=200.0 mA’ V, 1,,=200.0 mA, AV,,=l .O V, 80 us Pulse’ 2.0 .160 6.0 14 10 4.8 V,,=28.0 V, F=l .OMHz’ ‘.‘,,=28.0 V, F=l .OMHz’ V,,=28.0 V, F=l .OMHz’ V,,=28.0 V, 1,,=200.0 mA. P“VI =20.0 W. F=500 MHz -.._ --~ -V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz 1 ( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 W, FSOO MHz 10 50 - , - dB VSWR-T % I I 1 2O:l 1 - 1 Subject to Change Without Notice. MIA-COM, inc. Tel. (800) 366-2266 Fax (800) 618-8883 l North America: Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 2OW, 28V UF282OP v2.00 Typical Broadband Performance Curves POWER OUTPUT P,,=l 30 CAPACITANCES F=l.OMHz 12 vs VOLTAGE vs VOLTAGE mA F=500 MHz .O W I,,=200 .I 5 10 15 20 25 30 10 15 25 30 35 GAIN vs FREQUENCY V,,=28 V P,,p20 W I,,=200 mA EFFICIENCY I,,=200 vs FREQUENCY mA PO520 W F=500 MHz ‘O/ 5aL 100 200 300 400 500 100 200 300 400 -I 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=200 mA 25 , 1 J 0.05 0.10 0.20 0.40 0.60 0.60 1.00 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 2OW, 28V UF282OP v2.00 Typical Device Impedance Frequency (MHz) 100 300 500 I I Z,, (OHMS) 9.5 - j 60.0 5.0 - j 35.0 2.0 - i 22.0 V,,=28 V, I,,=200 mA, P,,,=20.0 Watts / I z LOAD (OHMS) 4.0 + j 68.0 40.0 + j 48.0 36.0 + ,i 34.0 ,I I Z,, is the series equivalent input impedance of the device from gate to gate. as measured from drain to drain. is Z LoAD‘ the optimum series equivalent load impedance RF Test Fixture PAR cl c2l 3, 4. 5 c6 c7 IL 12 14, 17 c9, 134 18 cl5 Cl6 Tl T2R 2B T3 u 2 3, 4, 5 go, T S LIS T UPf 56t@f 6.8pf Qdpf 2,OPF .01%4f 6eoPf souf mv. O.luf 2.50’ OF 50 MM SEMI RIGID COAX 2.50’ OF 25 OHM