UF2840P

an =y AMPFE comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor .. Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units i D i 627 i 6.33 1 247 1 257 1 H J ] 1 1.40 292 1 I 165 3.M 1 I 055 115 1 I .D65 325 Electrical Characteristics at 25°C input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side C ISS C oss C RSS GP qD - ) 45 30 a pF pF PF dB % - Vg28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, 1,,=500.0 mA, P,fi40.0 V, 1,,=500.0 mA, Po,,=40.0 V, 1,,=500.0 mA, P,,g40.0 W. F=500 MHz W, F=500 MHz W, F=500 MHz 10 50 - 2O:l VSWR-T Specifications Subject to Change Without Notice. MIA-COM, North America: Tel. (800) 366-2266 n Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Fax (800) 618-8883 Fax +81 (03)3226-1451 Tel. +44 (1344)869 595 Fax +44(1344)300 020 RF MOSFET Power Transistor, 4OW, 28V U F284OP v2.00 Typical Broadband Performance Curves CAPACITANCES 40 vs VOLTAGE 50 POWER OUTPUT vs VOLTAGE P,,=3.0 W I,,=500 mA F=500 MHz Fz1.0 MHz g f L 2 5 10 55 4o 30 20 E C RSS 10 / 0 15 "2, (") 20 25 30 5 10 15 20 25 30 35 5 10 v,, (“) GAIN vs FREQUENCY 30 v.,,=28 EFFICIENCY 65 - vs FREQUENCY mA P,,,=40 W V I,,=500 mA PO,,=40 W V,,=28 V I,,=500 6 c kii 55. c J 100 200 3w 400 500 50 . loo 200 3430 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT 60 vs POWER INPUT mA VD,=28 V I,,=500 1 J 0.1 0.25 1 2 2.5 POWER INPUT (W) Specifications Subject to Change Without Notice. M/A-COM, inc. Tel. (800) Fax (800) 366-2266 618-8883 n North America: Asia/Pacific: Tel. Fax +81 (03) 3226-1671 +81 (03) 3226-1451 w Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 4OW, 28V UF284OP v2.00 Typical Device Impedance Frequency 100 300 500 (MHz) 4, (OHMS) 6.0 - j 20.0 2.5 - j 5.5 4.0 + j 3.0 V,,=28 V, I,,=500 mA, P,,,=40.0 Watts Z LOAD (OHMS) 25.0 + j 27.0 13.0 + j 13.0 12.0 + j 5.0 Z,, is the series equivalent ‘. T input impedance of the device from gate to gate. as measured from drain to drain. Z LcAD the optimum series equivalent is load impedance RF Test Fixture PARTS c3s c6 : 2 7. 2 12 13 c7, 9, 10 It 14, 1s a9 a6 22 22’ L I ST WpF UJJ PC la Pf 470 pf 815 uf 10 uf Louf Lu 14 Ll2 13 L7, lo 28” L4 u2 0 SOUfSOV. lOOW42SV. 270 tl+f ZS V. 2.wlF25oNNsmr-RmDco~ 7 TlRdS 5 NO. e2 AVG VIRE lsTum5ra22AvGvw x5* ff so m-04 l%NSUSSION UNE Es’ffsomMTR-uNE ~ff5OpUTRAND(Issar(LIK 35’~50U+MTRCIE(OOSSWLlX .SVFSOOTR-UN uf2e4oP Specifications Subject to Change Without Notice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Inc. Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020