APT15F60B
APT15F60S
600V, 16A, 0.43Ω Max, Trr ≤ 190nS
N-Channel FREDFET
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a
greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control di/dt during switching, resulting in low EMI and reliable paralleling, even
when switching at very high frequency.
TO
-24
7
D 3 PAK
APT15F60B
APT15F60S
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
16
Continuous Drain Current @ TC = 100°C
10
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
405
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
7
A
1
54
Thermal and Mechanical Characteristics
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
290
RθJC
Junction to Case Thermal Resistance
0.43
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
0.15
-55
150
300
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Rev D 8-2011
Min
Characteristic
050-8172
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
600
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 7A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 400V
TJ = 25°C
VGS = 0V
TJ = 125°C
Typ
Max
0.57
0.34
4
-10
0.43
5
250
1000
±100
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = .5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT15F60B_S
Min
Test Conditions
VDS = 50V, ID = 7A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
14
2882
29
264
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
141
VGS = 0V, VDS = 0V to 400V
73
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 400V, ID = 7A
tr
td(off)
tf
Turn-Off Delay Time
72
15
30
16
19
49
15
VGS = 0 to 10V, ID = 7A,
VDS = 300V
RG = 10Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
A
54
S
TJ = 25°C
TJ = 125°C
TJ = 25°C
diSD/dt = 100A/μs
TJ = 125°C
VDD = 100V
TJ = 25°C
Unit
15
G
ISD = 7A, TJ = 25°C, VGS = 0V
ISD = 7A 3
Max
TJ = 125°C
ISD ≤ 7A, di/dt ≤1000A/μs, VDD = 400V,
TJ = 125°C
167
295
0.59
1.40
6.2
8.5
1.0
190
354
V
ns
μC
A
20
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 16.4mH, RG = 25Ω, IAS = 7A.
050-8172
Rev D 8-2011
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
60
V
GE
APT15F60B_S
25
= 10V
J
40
TJ= 25°C
30
TJ= 125°C
20
TJ= 150°C
10
15
6V
10
5.5V
5
5V
4.5V
0
0
0
3.5
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Output Characteristics
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 7A
3.0
35
60
NORMALIZED TO
250μSEC. PULSE TEST
@
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