APT35GN120BG

TYPICAL PERFORMANCE CURVES APT35GN120B APT35GN120B_S(G) APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. G (B) TO -2 47 D3PAK (S) C G E • 1200V NPT Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C E C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT35GN120B_S(G) UNIT Volts 1200 ±30 94 46 105 105A @ 1200V 379 -55 to 150 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 1200 5 1.4 5.8 1.7 1.9 100 2 6.5 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) 2.1 I CES I GES RGINT Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 µA nA Ω Rev D 7-2009 050-7601 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor TBD 600 6 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT35GN120B_S(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 35A TJ = 150°C, R G = 2.2Ω 7, VGE = 15V, L = 100µH,VCE = 1200V VCC = 960V, VGE = 15V, TJ = 125°C, R G = 2.2Ω 7 Inductive Switching (25°C) VCC = 800V VGE = 15V I C = 35A 4 5 MIN TYP MAX UNIT 2500 150 120 9.5 220 15 130 105 10 24 22 300 55 TBD 2395 2315 24 22 365 100 TBD 3745 3435 µJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area µs Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy RG = 2.2Ω 7 TJ = +25°C Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 44 6 µJ Inductive Switching (125°C) VCC = 800V VGE = 15V I C = 35A RG = 2.2Ω 7 55 Turn-on Switching Energy (Diode) Turn-off Switching Energy 66 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .33 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) Rev D 7-2009 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 050-7601 TYPICAL PERFORMANCE CURVES 120 15V IC, COLLECTOR CURRENT (A) 12V IC, COLLECTOR CURRENT (A) 100 80 11V 60 10V 40 9V 20 8V 0 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST