UMX5601
ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS
RoHS COMPLAINT
DESCRIPTION The UMX5601 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength (3T and greater) MR scanners. These PIN diodes produce the minimum artifacts (magnetic field distortions) available in the industry, today. The diodes have been tested in magnetic fields of ±7 Tesla. The UMX5601 PIN diodes have a magnetic moment at 7 T of 4E-8 (J/T). The diodes are offered in a surface mount package . The SM package utilizes a round end cap to mark the anode. The cathode is square. The fully passivated PIN diode chip is full face metallurgically bonded to shortened high conductive pins for lower thermal and electrical resistances. The PIN diodes feature low forward bias resistance and high zero bias impedance. The UMX5601 PIN diodes are characterized at 64, 128, and 300 MHz. The UMX5601SM meets RoHS requirements per EU Directive 2002/95/EC. IMPORTANT: Forthemostcurrentdata,consult MICROSEMI’s website: www.microsemi.com
TM
KEY FEATURE S Ultra low magnetic construction
ww w. MI CR OS EMI.c om
SOGO passivated chip Thermally matched configuration RoHS compliant
1
Low capacitance at 0 V bias Low conductance at 0 V bias Metallurgical bond Fused-in-glass construction Non cavity design Available in surface mount package. Compatible with automatic insertion equipment
ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Storage Temperature Operating Temperature Non -Repetitive Peak
VRRM VRWM VR V R (RMS) T stg T op
100 100 100 75 -65 to +175 -65 to +150
V 1- These devices are supplied with V ºC ºC
Silver terminations. Other terminal finishes may be available on request. Consult factory for details .
THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED)
Thermal Resistance UMX5601SM Symbol θ Val ue 2 Unit ºC/Watt APPLICATIONS/BENEFITS High B Field (3T+) in bore APPLICATIONS: Active or semi -active (not passive) MR blocking circuits MR detuning circuits
UMX 5601 U MX 5601
MR disable circuits MR receiver protector circuits
Copyright 2005 Rev. B , 2006- 12-20
Microsemi
Lowell Division 75 Technology Drive, Lowell, MA. 01851, 978- 442- 5600, Fax: 978- 937- 3748
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UMX5601
ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS
RoHS COMPLAINT
ELECTRICAL PARAMETERS @ 25 (unless otherwise specified) C
Parameter
Forward Voltage (Note 1) Reverse Break Down Voltage Reverse Current Inductance
Symbol
VF VBR IR Ls
Conditions
I F = 100 mA I R = 10 uA VR = 100 V
Min
Typ.
0.75
Max
1.0
Units
ww w. MI CR OS EMI.c om
V V
100 10 900
uA pH
Magnetic moment
m χ ρ χ
CT Rp Rs
@ 7T @ 1T @ 7T @ 1T >1T to 7T
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