CM100TU-12H_09

MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM100TU-12H ● IC ................................................................... 100A ● VCES .......................................................... 600V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 80 ±0.25 20 4–φ5.5 MOUNTING HOLES 1.25 10 P 11 G E (4) 10 CM N 11 19.1 E 19.1 G 11 11.85 E GuN EuN GvN EvN GwN EwN 1.25 GuP EuP 74 ±0.25 91 GvP EvP GwP EwP G 39.3 18.7 G E G E G E U V W 5–M4NUTS TC measured point 2.8 7.1 10 11 20 19.1 10 20 11 10 0.5 3.05 11 4 8.1 TC measured point P GuP EuP 29 –0.5 +1 19.1 GvP EvP GwP EwP U V GvN EvN W GwN EwN LABEL 26 GuN EuN N CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE (Tj = 25°C, unless otherwise specified) MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 100 200 100 200 400 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M4 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES Item (Tj = 25°C, unless otherwise specified) Test Conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE = ±15V RG = 6.3Ω Resistive load IE = 100A, VGE = 0V IE = 100A, die / dt = –200A / µs Junction to case, IGBT part (Per 1/6 module) Junction to case, FWDi part (Per 1/6 module) Case to heat sink, conductive grease applied (Per 1/6 module) (Note 6) (Note 4) Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.4 2.6 — — — 200 — — — — — — 0.24 — — 0.11 Max 1 7.5 0.5 3.0 — 8.8 4.8 1.3 — 100 250 200 300 2.6 160 — 0.31 0.7 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) Tj=25°C VGE=20 (V) 15 14 13 VCE = 10V 150 150 12 11 10 100 100 50 9 8 0 0 2 4 6 8 10 50 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 10 Tj = 25°C 8 3 6 IC = 200A IC = 100A 2 IC = 40A 0 0 4 8 12 16 20 2 4 1 0 0 50 100 150 200 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C Cies 100 7 5 3 2 Coes 102 7 5 3 2 Cres 10–1 7 5 3 2 101 1.0 1.4 1.8 2.2 2.6 3.0 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 REVERSE RECOVERY TIME trr (ns) Tj = 125°C tf 5 3 2 5 3 2 3 2 102 7 5 3 2 td(off) 102 7 5 3 2 trr Irr 101 7 5 3 2 td(on) VCC = 300V VGE = ±15V RG = 6.3Ω 3 5 7 102 2 3 57 tr 101 7 101 2 101 7 101 2 3 5 7 102 100 2 3 57 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.31K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.7K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A 15 VCC = 200V 10 VCC = 300V 5 0 0 50 100 150 200 250 300 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 200A /µs 7 7 Tj = 25°C SWITCHING TIMES (ns)