RD30HUF1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor,520MHz,30W OUTLINE RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 APPLICATION 2.8+/-0.3 0.10 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HUF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 75 7.5 7 175 -40 to +175 2.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD1 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz,VDD=12.5V Pin=3W,Idq=1.0A VDD=15.2V,Po=30W(PinControl) f=520MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.2 30 50 LIMITS TYP MAX. 200 1 1.7 2.2 35 55 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD30HUF1 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 CHANNEL DISSIPATION Pch(W) 80 Silicon MOSFET Power Transistor,520MHz,30W 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 60 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 10 Ta=+25°C Vgs=5V Vds VS. Ciss CHARACTERISTICS 140 120 Vgs=4.5V 8 6 4 2 0 0 2 4 6 Vds(V) 8 10 100 Ciss(pF) 80 60 40 20 0 0 Ids(A) Vgs=4V Ta=+25°C f=1MHz Vgs=3.5V Vgs=3V Vgs=2.5V 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 16 14 12 Crss(pF) 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz RD30HUF1 MITSUBISHI ELECTRIC 2/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 Pin-Po CHARACTERISTICS RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 40 30 20 10 Ｉｄｄ Ta= + 25°C f= 520M Hz Vdd= 12.5V Idq= 1.0A Silicon MOSFET Power Transistor,520MHz,30W 100 Po 50 Po 100 80 60 ηd Ta= 25°C f= 520M Hz Vdd= 12.5V Idq= 1.0A Po(dBm) , Gp(dB) , Idd(A ) 80 Pout( W) , Idd( A ) ηｄ 40 30 20 10 0 0 2 4 Pin(W) 6 8 ηd( %) Gp 40 20 0 40 20 0 Idd 0 10 20 Pin(dBm) 30 40 V dd-Po CHARACTERISTICS 50 40 30 20 10 0 4 6 8 10 V dd(V ) 12 14 Ta= 25°C f= 520M Hz Pin= 3W Icq= 1.0A Zg= ZI= 50 ohm V gs -Ids CHARACTERISTICS 2 10 8 6 4 2 0 10 8 6 4 2 0 1.5 2.5 3.5 Vgs (V) 4.5 V ds =10V Tc =-25~+75°C -25°C +25°C Po Po(W) Idd RD30HUF1 Idd(A ) Ids (A ) +75°C MITSUBISHI ELECTRIC 3/7 10 Jan 2006 ηd( %) 60 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 Vdd RoHS Compliance, TEST CIRCUIT(f=520MHz) Vgg C1 Silicon MOSFET Power Transistor,520MHz,30W 9.1kOHM 5pF 15pF 8.2kOHM 100OHM 7pF L1 520MHz RD30HUF1 L2 RF-OUT C2 5pF L3 C3 RF-IN 56pF 56pF 15pF 15pF 15pF 5 10 12 90 100 15pF 5pF 7pF 15pF 5 8 14 90 100 Note:Board material-Teflon substrate 8 4.8 10.8 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:3Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm RD30HUF1 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zin f=480MHz Zin f=520MHz Zout f=480MHz Zout f=440MHz Zout f=440MHz Zin Zo=10Ω Zin , Zout F (MHz) 440 480 520 Zin (ohm) 1.16-j0.14 0.90+j0.35 0.88+j0.84 Zout (ohm) 1.17+j0.74 1.15+j1.07 1.47+j1.24 Conditions Po=40W, Vdd=12.5V,Pin=3.0W Po=38W, Vdd=12.5V,Pin=3.0W Po=35W, Vdd=12.5V,Pin=3.0W RD30HUF1 MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 S12 S22 (ang) -8.8 -18.0 -23.7 -27.9 -31.1 -31.3 -29.2 -21.8 -9.5 -3.9 7.5 28.3 46.8 53.0 56.5 63.6 64.1 63.5 65.6 65.3 64.6 64.8 (mag) 0.723 0.748 0.778 0.817 0.832 0.857 0.879 0.887 0.901 0.908 0.913 0.916 0.928 0.932 0.936 0.942 0.945 0.946 0.952 0.955 0.955 0.957 (ang) -170.2 -172.5 -173.9 -175.6 -177.6 -179.7 178.3 176.3 174.2 173.4 172.3 170.5 168.6 166.7 164.9 163.1 161.6 160.0 158.2 157.0 155.4 153.6 (mag) 0.016 0.015 0.013 0.011 0.010 0.008 0.007 0.005 0.004 0.004 0.004 0.004 0.004 0.006 0.007 0.007 0.009 0.009 0.010 0.012 0.012 0.014 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.870 0.880 0.890 0.902 0.911 0.921 0.930 0.931 0.941 0.946 0.946 0.947 0.951 0.957 0.960 0.962 0.962 0.962 0.961 0.961 0.965 0.964 (ang) -173.4 -177.3 -179.5 178.2 176.0 174.1 172.1 170.0 168.0 167.1 166.3 164.2 162.5 160.7 159.1 157.6 155.8 154.2 152.7 151.2 149.6 148.2 (mag) 7.566 4.825 3.398 2.568 1.982 1.588 1.299 1.070 0.907 0.852 0.780 0.673 0.589 0.522 0.464 0.419 0.383 0.341 0.318 0.296 0.270 0.259 S21 (ang) 74.2 63.2 55.1 47.0 40.2 34.5 29.0 23.9 20.3 18.7 15.9 12.5 10.1 6.6 4.1 2.2 -1.2 -3.0 -4.2 -7.4 -8.3 -9.4 RD30HUF1 MITSUBISHI ELECTRIC 6/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD30HUF1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006