2SD1624S-TD-E

Ordering number : EN2019B 2SB1124/2SD1624 Bipolar Transistor http://onsemi.com (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of FBET, MBIT processes Fast switching speed • • • • Low collector-to-emitter saturation voltage Large current capacity and wide ASO Specifications ( ): 2SB1124 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit (--)60 V (--)50 V (--)6 V (--)3 A (--)6 A Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 1 2 4.0 1.5 3 0.4 2SB1124S-TD-E 2SB1124S-TD-H 2SB1124T-TD-E 2SB1124T-TD-H 2SD1624S-TD-E 2SD1624S-TD-H 2SD1624T-TD-E 2SD1624T-TD-H Packing Type: TD TD Marking 3.0 RANK 2SB1124 0.75 RANK 2SD1624 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. BG 1.5 DG 0.5 LOT No. 0.4 PCP Semiconductor Components Industries, LLC, 2013 September, 2013 1 2 1 3 2SB1124 3 2SD1624 80812 TKIM/O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019-1/7 2SB1124 / 2SD1624 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 500 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) mW 1.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 VCE=(--)2V, IC=(--)100mA hFE2 VCE=(--)2V, IC=(--)3A fT Cob VCE=(--)10V, IC=(--)50mA Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ 100* max Unit (--)1 μA (--)1 μA 560* 35 150 VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA MHz (39)25 pF (--0.35)0.19 (--0.7)0.5 V (--)0.94 (--)1.2 V VCE=(--)2A, IC=(--)100mA IC=(--)10μA, IE=0A (--)60 V IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions V (70)70 ns (450)650 ns (35)35 ns * ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 RB OUTPUT IB2 25Ω VR 50Ω + 100μF --5V + 470μF 25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SB1124S-TD-E Device PCP 1,00pcs./reel Pb Free 2SB1124S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SB1124T-TD-E PCP 1,00pcs./reel Pb Free 2SB1124T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624S-TD-E PCP 1,00pcs./reel Pb Free 2SD1624S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624T-TD-E PCP 1,00pcs./reel Pb Free 2SD1624T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free No.2019-2/7 2SB1124 / 2SD1624 IC -- VCE --5.0 mA --4.5 Collector Current, IC -- A --50mA --2.5 --20mA --1.5 --10mA --1.0 --5mA --0.5 0 --0.4 --0.8 --1.2 20mA 2.5 10mA 2.0 1.5 5mA 1.0 --2.0 0 --14 --1.8 mA --12m 1.6 2.0 ITR08908 2SD1624 8mA 1.8 7mA 1.6 Collector Current, IC -- A --8mA --1.4 1.2 IC -- VCE 2.0 --10mA --1.6 0.8 Collector-to-Emitter Voltage, VCE -- V 2SB1124 A 0.4 ITR08907 IC -- VCE --2.0 IB=0 0 --1.6 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 40mA 3.0 0.5 IB=0 0 --6mA --1.2 --1.0 --4mA --0.8 --0.6 --2mA --0.4 --0.2 6mA 1.4 5mA 1.2 4mA 1.0 3mA 0.8 0.6 2mA 0.4 1mA 0.2 IB=0 0 0 --2 --4 --6 --8 --10 --12 --14 --18 --20 0 6 8 Collector Current, IC -- A --2.4 --2.0 Ta=7 5°C 25°C --25°C --1.6 --0.8 10 12 14 16 18 --0.4 20 ITR08910 IC -- VBE 3.2 2SD1624 VCE=2V 2.8 --1.2 4 Collector-to-Emitter Voltage, VCE -- V 2SB1124 VCE= --2V --2.8 2 ITR08909 IC -- VBE --3.2 IB=0 0 --16 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 3.5 2.4 2.0 1.6 Ta= 75° 25°C C --25° C Collector Current, IC -- A --3.5 --2.0 A 100m 80mA 60mA 4.0 mA --100 --3.0 2SD1624 4.5 0 --20 --4.0 1.2 0.8 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 0 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 2SD1624 VCE=2V 7 5 DC Current Gain, hFE 5 1.2 ITR08912 hFE -- IC 1000 2SB1124 VCE= --2V 7 0.2 ITR08911 hFE -- IC 1000 DC Current Gain, hFE IC -- VCE 5.0 2SB1124 Ta=75°C 3 25°C 2 --25°C 100 7 3 2 --25°C 100 7 5 5 3 3 2 25°C Ta=75°C 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR08913 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR08914 No.2019-3/7 2SB1124 / 2SD1624 f T -- IC 7 3 2SD 162 4 2SB 1124 100 7 5 3 2 10 0.01 3 5 2 0.1 3 5 2 1.0 3 For PNP, the minus sign is omitted. 2 3 5 7 2 10 3 2 --100 5°C --2 Ta= C 75° 7 5 25°C 3 2 5 7 100 ITR08916 VCE(sat) -- IC 2SD1624 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 1000 3 5 3 2 100 7 5 25°C C Ta=75° 3 2 --25°C 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 7 0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 25°C --25°C 7 Ta=75°C 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 ICP=6A 0m 10m s s s 2 1.0 DC op era 5 tio n 3 2 0.1 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (250mm2✕0.8mm) 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 1.0 2 3 5 ITR08918 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 ITR08920 PC -- Ta 1.8 1m 10 3 Collector Current, IC -- A 2SB1124 / 2SD1624 IC=3A 3 2 2SD1624 IC / IB=20 ITR08919 Collector Dissipation, PC -- W 5 7 0.1 VBE(sat) -- IC 3 7 0.01 5 ASO 10 5 Collector Current, IC -- A 7 5 --1.0 3 10 2SB1124 IC / IB=20 7 2 ITR08917 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 Collector-to-Base Voltage, VCB -- V --10 Collector Current, IC -- A 2SB1 124 2SD 162 4 5 1.0 1.0 VCE(sat) -- IC 5 7 10 ITR08915 2SB1124 IC / IB=20 7 10 5 Collector Current, IC -- A --1000 2 For PNP, the minus sign is omitted. 2 2SB1124 / 2SD1624 f=1MHz 3 5 2 Cob -- VCB 5 2SB1124 / 2SD1624 VCE=10V Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 1000 2SB1124 / 2SD1624 1.6 1.5 M 1.4 1.2 ou nt ed on 1.0 ac er am 0.8 0.6 0.5 0.4 No h ic bo ar d( 25 eat s ink 0m m2 ✕ 0.2 0.8 m m ) 0 5 7 100 ITR08921 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08922 No.2019-4/7 2SB1124 / 2SD1624 Bag Packing Specification 2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H, 2SD1624T-TD-E, 2SD1624T-TD-H No.2019-5/7 2SB1124 / 2SD1624 Outline Drawing Land Pattern Example 2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H, 2SD1624T-TD-E, 2SD1624T-TD-H Mass (g) Unit 0.058 mm Unit: mm * For reference 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.2019-6/7 2SB1124 / 2SD1624 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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