BCW32LT1G

BCW32LT1G General Purpose Transistors NPN Silicon Features www.onsemi.com • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current − Continuous 2 EMITTER 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Value Unit mW MARKING DIAGRAM 225 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C 417 °C/W (Note: Microdot may be in either location) °C *Date Code orientation and/or overbar may vary depending upon manufacturing location. D2 M G G 1 RqJA TJ, Tstg −55 to +150 D2 M G = Device Code = Date Code* = Pb−Free Package 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping† BCW32LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NSVBCW32LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2000 November, 2016 − Rev. 4 1 Publication Order Number: BCW32LT1/D BCW32LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CEO 32 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 32 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc − − − − 100 10 nAdc mAdc 200 − 450 − − 0.25 0.55 − 0.70 Cobo − − 4.0 pF NF − − 10 dB Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 100 20 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 mA 7.0 5.0 10 mA 3.0 20 300 mA 100 mA 10 5.0 2.0 1.0 30 mA 0.5 30 mA 10 mA 0.2 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10 10k Figure 1. Noise Voltage 20 50 100 200 500 1k f, FREQUENCY (Hz) Figure 2. Noise Current www.onsemi.com 2 2k 5k 10k BCW32LT1G NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) BANDWIDTH = 1.0 Hz 200k 100k 50k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 20k 10k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 8.0 dB 10 20 Figure 3. Narrow Band, 100 Hz 500k RS , SOURCE RESISTANCE (OHMS) 3.0 dB 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF + 20 log10 10k 5k 1.0 dB 2k 1k 500 3.0 dB 5.0 dB 8.0 dB S 10 20 30 50 70 100 200 300 500 700 Ǔ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. n (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) R = Source Resistance (W) 2.0 dB 200 100 50 ǒ 1k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband www.onsemi.com 3 BCW32LT1G TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 -55°C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TJ = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 200 mA 40 100 mA 20 0 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics 1.4 0.1 400 mA 60 Figure 7. Collector Saturation Region 0.8 IB = 500 mA 50 1.6 0.8 25°C to 125°C 0 *qVC for VCE(sat) - 55°C to 25°C -0.8 25°C to 125°C -1.6 qVB for VBE -2.4 0.1 100 *APPLIES for IC/IB ≤ hFE/2 Figure 9. “On” Voltages 0.2 - 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients www.onsemi.com 4 50 100 BCW32LT1G TYPICAL DYNAMIC CHARACTERISTICS 10 TJ = 25°C f = 1.0 MHz C, CAPACITANCE (pF) 7.0 Cib 5.0 Cob 3.0 2.0 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance www.onsemi.com 5 10 20 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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