BCW66GLT3G

BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 (TO−236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 75 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Collector Current − Pulsed IC 1200 mAdc COLLECTOR 3 1 BASE 2 EMITTER Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA PD 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. EG MG G EG M G = Specific Device Code = Date Code* = Pb−Free Package (*Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BCW66GLT1G SOT−23 (Pb−Free) 3,000/Tape & Reel SBCW66GLT1G SOT−23 (Pb−Free) 3,000/Tape & Reel BCW66GLT3G SOT−23 10,000/Tape & Reel (Pb−Free) Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2016 − Rev. 6 1 Publication Order Number: BCW66GLT1/D BCW66GLT1G, SBCW66GLT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO 45 − − Vdc OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector −Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) V(BR)CES 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc − − − − 20 20 nAdc mAdc − − 20 nAdc 50 110 160 60 − − − − − − 400 − − − − − 0.7 0.3 − − 2.0 fT 100 − − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 12 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 80 pF Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Turn−On Time (IB1 = IB2 = 15 mAdc) ton − − 100 ns Turn−Off Time (IC = 150 mAdc, RL = 150 W) toff − − 400 ns Collector Cutoff Current (VCE = 45 Vdc, IE = 0) (VCE = 45 Vdc, IE = 0, TA = 150°C) ICES Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 1 1.2 0.1 0.01 TA = 25°C TA = 150°C 1.0 0.9 TA = −55°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 0.3 0.2 TA = −55°C 0.1 IC/IB = 10 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1 10 100 1000 TA = 150°C 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 2 BCW66GLT1G, SBCW66GLT1G TYPICAL CHARACTERISTICS 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 2.0 VCE = 2 V TA = 150°C TA = 25°C TA = −55°C 100 10 0.01 0.1 1 10 100 1.4 100 mA 1.2 200 mA 500 mA IC = 800 mA 1.0 0.8 0.6 0.4 0.2 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. DC Current Gain vs. Collector Current Figure 4. Saturation Region 100 1.0 VCE = 2 V 0.9 f = 1 MHz Cibo 0.8 TA = −55°C 0.7 TA = 25°C 0.6 0.5 0.4 Cobo 10 TA = 150°C 0.3 1 0.2 0.1 1 10 100 0.1 1000 1 10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 5. Base−Emitter Turn−On Voltage vs. Collector Current Figure 6. Capacitance 100 10,000 1000 VCE = 2 V TA = 25°C IC, COLLECTOR CURRENT (mA) ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1.6 1000 C, CAPACITANCE (pF) VBE(ON), BASE−EMITTER ON VOLTAGE (V) 0.001 TA = 25°C 1.8 100 1s 100 ms 10 ms 1 ms 0.1 ms, 0.01 ms 1000 100 10 Single Pulse Test at TA = 25°C 1 10 0.1 1 10 100 1000 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 7. Current Gain Bandwidth Product vs. Collector Current Figure 8. Safe Operating Area www.onsemi.com 3 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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