BDV65BG

BDV65B(NPN), BDV64B(PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Max Unit http://onsemi.com 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100−120 VOLTS, 125 WATTS VCEO 100 Vdc NPN Collector−Base Voltage VCB 100 Vdc COLLECTOR 2 Emitter−Base Voltage VEB 5.0 Vdc IC 10 20 Adc Collector Current − Continuous − Peak Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 125 1.0 W W/°C TJ, Tstg -65 to +150 °C Symbol Max Unit RqJC 1.0 °C/W Operating and Storage Junction Temperature Range BASE 1 BASE 1 EMITTER 3 BDV65B THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PNP COLLECTOR 2,4 EMITTER 3 BDV64B SOT−93 (TO−218) CASE 340D 1 2 3 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 14 1 Publication Order Number: BDV65B/D BDV65B (NPN), BDV64B (PNP) MARKING DIAGRAMS TO−247 TO−218 BDV6xB AYWWG 1 BASE AYWWG BDV6xB 3 EMITTER 1 BASE 2 COLLECTOR BDV6xB A Y WW G 3 EMITTER 2 COLLECTOR = Device Code x = 4 or 5 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Order Number Package Type Shipping BDV65BG TO−218 (Pb−Free) 30 Units / Rail BDV64BG TO−218 (Pb−Free) 30 Units / Rail BDV65BG TO−247 (Pb−Free) 30 Units / Rail BDV64BG TO−247 (Pb−Free) 30 Units / Rail 1.0 DERATING FACTOR 0.8 0.6 0.4 0.2 0 0 25 50 100 75 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 BDV65B (NPN), BDV64B (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO − 1.0 mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO − 0.4 mAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0, TC = 150°C) ICBO − 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 5.0 mAdc hFE 1000 − − Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.02 Adc) VCE(sat) − 2.0 Vdc Base−Emitter Saturation Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.5 Vdc OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) http://onsemi.com 3 BDV65B (NPN), BDV64B (PNP) NPN PNP 10K hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 4 V 10K 1K 1K 4 0.1 1 10 1 IC, COLLECTOR CURRENT (A) 0.1 Figure 2. DC Current Gain V, VOLTAGE (V) V, VOLTAGE (V) 10 VBE(sat) @ IC/IB = 250 1 0.1 1 IC, COLLECTOR CURRENT (A) 1 0.1 10 VBE(sat) @ IC/IB = 250 0.1 Figure 4. “On” Voltages IC, COLLECTOR CURRENT (A) 20 5.0 ms 1.0 ms dc 5 SECONDARY BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B, BDV64B 1 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150°C, TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 7. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 μs 50 1 IC, COLLECTOR CURRENT (A) Figure 5. “On” Voltages 100 10 10 Figure 3. DC Current Gain 10 0.1 1 IC, COLLECTOR CURRENT (A) 10 50 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 Figure 6. Active Region Safe Operating Area http://onsemi.com 4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDV65B (NPN), BDV64B (PNP) 1.0 0.5 0.2 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZθJC(t) t1 0.03 t2 0.01 0.01 0.01 ZθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX 0.05 DUTY CYCLE, D = t1/t2 (SINGLE PULSE) 0.05 0.1 0.5 1.0 5 t, TIME (ms) 10 Figure 7. Thermal Response http://onsemi.com 5 50 100 500 1000 BDV65B (NPN), BDV64B (PNP) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U DIM A B C D E G H J K L Q S U V 4 A L S E 1 K 2 3 J H D MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q T B M STYLE 3: PIN 1. 2. 3. 4. H G M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 6 MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 BDV65B (NPN), BDV64B (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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