BDW47G

BDW42G (NPN), BDW46G,BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built−In Base Emitter Shunt resistors TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com 15 AMP DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLT, 85 WATT 4 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BDW46 BDW42, BDW47 Symbol Value VCEO Unit VCB Emitter-Base Voltage TO−220 CASE 221A STYLE 1 Vdc MARKING DIAGRAM 80 100 VEB 5.0 Vdc Collector Current IC 15 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 85 0.68 W W/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 1.47 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 August, 2016 − Rev. 17 3 Vdc 80 100 Collector-Base Voltage BDW46 BDW42, BDW47 2 BDWxx AYWWG BDWxx = Device Code x = 42, 46, or 47 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping BDW42G TO−220 (Pb−Free) 50 Units/Rail BDW46G TO−220 (Pb−Free) 50 Units/Rail BDW47G TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: BDW42/D BDW42G (NPN), BDW46G, BDW47G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 80 100 − − − − 2.0 2.0 − − 1.0 1.0 − 2.0 1000 250 − − − − 2.0 3.0 − 3.0 Unit OFF CHARACTERISTICS VCEO(sus) Collector Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDW46 BDW42/BDW47 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) VBE(on) Vdc Vdc SECOND BREAKDOWN (Note 2) IS/b Second Breakdown Collector Current with Base Forward Biased BDW42 VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc BDW46/BDW47 Adc 3.0 1.2 3.8 1.2 − − − − 4.0 − − − 200 300 300 − DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT Cob BDW42 BDW46/BDW47 Small−Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe MHz pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. www.onsemi.com 2 BDW42G (NPN), BDW46G, BDW47G (PNP) PD, POWER DISSIPATION (WATTS) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Temperature Derating Curve 5.0 2.0 RC SCOPE APPROX + 8.0 V 0 51 V1 D1 [ 8.0 k [ 150 25 ms 0.7 0.5 0.3 0.2 for td and tr, D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities - 12 V tr, tf v 10 ns DUTY CYCLE = 1.0% tf 1.0 + 4.0 V APPROX 0.1 0.07 0.05 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 BDW46, 47 (PNP) BDW42 (NPN) ts 3.0 t, TIME (s) μ RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 VCC - 30 V 0.2 0.1 0.1 0.07 0.05 P(pk) 0.05 RqJC(t) = r(t) RqJC RqJC = 1.92°C/W 0.02 t1 0.03 0.02 0.01 0.01 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response www.onsemi.com 3 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 50 100 200 300 500 1000 BDW42G (NPN), BDW46G, BDW47G (PNP) ACTIVE−REGION SAFE OPERATING AREA 50 0.1 ms 20 10 TJ = 25°C 1.0 ms 5.0 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) 2.0 1.0 0.5 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 50 0.5 ms dc 0.2 0.1 0.05 1.0 0.1 ms 20 10 TJ = 25°C SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) 2.0 1.0 0.5 BDW42 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. BDW46 and BDW47 Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 200°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 and 6 is based on TJ(pk) = 200°C; TC is variable depending on conditions. *Linear extrapolation 10,000 300 TJ = + 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN dc BDW46 BDW47 0.05 1.0 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.5 ms 0.2 0.1 Figure 5. BDW42 1000 500 300 200 100 TJ = 25°C VCE = 3.0 V IC = 3.0 A 50 30 20 BDW46, 47 (PNP) BDW42 (NPN) 10 1.0 1.0 ms 5.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) Cob 100 Cib 70 50 BDW46, 47 (PNP) BDW42 (NPN) 200 30 0.1 500 1000 Figure 7. Small−Signal Current Gain 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance www.onsemi.com 4 50 100 BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP) 20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 5000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7000 5000 TJ = 150°C 3000 25°C 2000 1000 700 500 -55°C 300 200 0.1 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 1.0 20 30 Figure 10. Collector Saturation Region 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 VBE(sat) @ IC/IB = 250 1.5 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.5 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages www.onsemi.com 5 5.0 7.0 10 BDW42G (NPN), BDW46G, BDW47G (PNP) BDW46, 47 (PNP) +5.0 +4.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENT (mV/ °C) BDW42 (NPN) *IC/IB v 250 +3.0 25°C to 150°C +2.0 +1.0 -55°C to 25°C 0 -1.0 *qVC for VCE(sat) -2.0 25°C to 150°C -3.0 qVB for VBE -55°C to 25°C -4.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 +5.0 +4.0 + 25°C to 150°C +2.0 +1.0 0 -1.0 *qVC for VCE(sat) -2.0 -55°C to + 25°C qVB for VBE + 25°C to 150°C -3.0 -55°C to +25°C -4.0 -5.0 7.0 10 *IC/IB v 250 +3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 104 105 FORWARD REVERSE IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ 105 VCE = 30 V 103 102 101 TJ = 150°C 100°C 100 25°C 10-1 +0.6 +0.4 +0.2 0 104 103 REVERSE FORWARD VCE = 30 V 102 TJ = 150°C 101 100 100°C 25°C 10-1 -0.6 -0.4 -0.2 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut−Off Region NPN BDW42 COLLECTOR PNP BDW46 BDW47 BASE COLLECTOR BASE [ 8.0 k [ 60 [ 8.0 k EMITTER [ 60 EMITTER Figure 14. Darlington Schematic www.onsemi.com 6 BDW42G (NPN), BDW46G, BDW47G (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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