BDW47

BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built−In Base Emitter Shunt resistors TO−220AB Compact Package Pb−Free Packages Are Available* 15 AMP DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLT, 85 WATT MARKING DIAGRAM 4 MAXIMUM RATINGS Rating Collector-Emitter Voltage BDW46 BDW42, BDW47 Collector-Base Voltage BDW46 BDW42, BDW47 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEB IC IB PD 85 0.68 TJ, Tstg −55 to +150 W W/°C °C VCB 80 100 5.0 15 0.5 Vdc Adc Adc Symbol VCEO 80 100 Vdc Value Unit Vdc 1 2 3 TO−220AB CASE 221A−09 STYLE 1 BDWxx AYWWG BDWxx = Device Code x = 42, 46, or 47 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device BDW42 BDW42G Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.47 Unit °C/W BDW46 BDW46G 50 Units/Rail 50 Units/Rail Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BDW47 BDW47G 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 Preferred devices are ON Semiconductor recommended choices for future use and best overall value October, 2005 − Rev. 12 Publication Order Number: BDW42/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS SECOND BREAKDOWN (Note 2) ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS Small−Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Second Breakdown Collector Current with Base Forward Biased BDW42 Base−Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BDW46/BDW47 Characteristic BDW42 − NPN, BDW46, BDW47 − PNP http://onsemi.com BDW42 BDW46/BDW47 VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc BDW46 BDW42/BDW47 BDW46 BDW42/BDW47 BDW46 BDW42/BDW47 VCEO(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO Cob hFE IS/b hfe fT 1000 250 Min 80 100 300 4.0 3.0 1.2 3.8 1.2 − − − − − − − − − − Max 200 300 3.0 2.0 3.0 2.0 1.0 1.0 2.0 2.0 − − − − − − − − − − mAdc mAdc mAdc MHz Unit Adc Vdc Vdc Vdc pF 2 BDW42 − NPN, BDW46, BDW47 − PNP 90 PD, POWER DISSIPATION (WATTS) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Temperature Derating Curve 5.0 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 APPROX VCC − 30 V RC 3.0 2.0 SCOPE t, TIME ( μs) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 ts tf + 8.0 V 0 V1 APPROX 51 D1 + 4.0 V [ 8.0 k [ 150 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 0.3 − 12 V tr, tf v 10 ns DUTY CYCLE = 1.0% 25 ms for td and tr, D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities td @ VBE(off) = 0 V 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Test Circuit Figure 3. Switching Times r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 t1 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 P(pk) RqJC(t) = r(t) RqJC RqJC = 1.92°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response http://onsemi.com 3 BDW42 − NPN, BDW46, BDW47 − PNP ACTIVE−REGION SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 BDW42 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) dc TJ = 25°C 1.0 ms 0.1 ms IC, COLLECTOR CURRENT (AMP) 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 BDW46 BDW47 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) TJ = 25°C 1.0 ms 0.1 ms 0.5 ms 0.5 ms dc Figure 5. BDW42 Figure 6. BDW46 and BDW47 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 and 6 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. *Linear extrapolation 10,000 hFE, SMALL−SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 TJ = 25°C VCE = 3.0 V IC = 3.0 A BDW46, 47 (PNP) BDW42 (NPN) 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 300 TJ = + 25°C 200 C, CAPACITANCE (pF) 100 70 50 Cib Cob BDW46, 47 (PNP) BDW42 (NPN) 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 30 0.1 Figure 7. Small−Signal Current Gain Figure 8. Capacitance http://onsemi.com 4 BDW42 − NPN, BDW46, BDW47 − PNP BDW42 (NPN) 20,000 VCE = 3.0 V 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 −55 °C TJ = 150°C 25°C 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 20,000 BDW46, 47 (PNP) VCE = 3.0 V TJ = 150°C 25°C −55 °C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 3.0 TJ = 25°C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 Figure 10. Collector Saturation Region 3.0 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.5 3.0 TJ = 25°C 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 1.5 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 1.0 0.5 IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages http://onsemi.com 5 BDW42 − NPN, BDW46, BDW47 − PNP BDW42 (NPN) +5.0 +4.0 +3.0 +2.0 +1.0 0 −1.0 −2.0 −3.0 −4.0 −5.0 0.1 0.2 0.3 0.5 0.7 1.0 qVB for VBE *qVC for VCE(sat) 25°C to 150°C −55 °C to 25°C 2.0 3.0 5.0 7.0 10 *IC/IB v 250 25°C to 150°C −55 °C to 25°C +5.0 +4.0 +3.0 +2.0 +1.0 0 −1.0 −2.0 −3.0 −4.0 −5.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 *qVC for VCE(sat) −55 °C to + 25°C qVB for VBE + 25°C to 150°C −55 °C to +25°C *IC/IB v 250 + 25°C to 150°C BDW46, 47 (PNP) θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENT (mV/ °C) IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( μA) IC, COLLECTOR CURRENT ( μA) 104 103 102 101 100 10− 1 +0.6 +0.4 TJ = 150°C 100°C 25°C +0.2 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 REVERSE VCE = 30 V FORWARD 105 104 103 102 TJ = 150°C 101 100 100°C REVERSE VCE = 30 V FORWARD 25°C 10− 1 −0.6 −0.4 −0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut−Off Region NPN BDW42 COLLECTOR PNP BDW46 BDW47 COLLECTOR BASE BASE [ 8.0 k [ 60 [ 8.0 k [ 60 EMITTER EMITTER Figure 14. Darlington Schematic http://onsemi.com 6 BDW42 − NPN, BDW46, BDW47 − PNP PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA B 4 F C T A S −T− SEATING PLANE Q 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 H K Z L V G D N U R J STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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