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CM1213A-02SO

CM1213A-02SO

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    SC

  • 描述:

    Diode, Esd Protection, 3.3V, 0.85Pf; Clamping Voltage Vc Max:10V; Diode Case Style:sc-74; No. Of Pin...

  • 数据手册
  • 价格&库存
CM1213A-02SO 数据手册
CM1213A, SZCM1213A 1, 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD channel consists of a pair of diodes in series which steer the positive or negative ESD current pulse to either the positive (VP) or negative (VN) supply rail. A Zener diode is embedded between VP and VN, offering two advantages. First, it protects the VCC rail against ESD strikes, and second, it eliminates the need for a bypass capacitor that would otherwise be needed for absorbing positive ESD strikes to ground. The CM1213A will protect against ESD pulses up to 12 kV per the IEC 61000−4−2 standard. www.onsemi.com SOT23−3 SO SUFFIX CASE 318 • One, Two, and Four Channels of ESD Protection Note: For 6 and 8−channel Devices, See the CM1213 Datasheet MARKING DIAGRAMS • Provides ESD Protection to IEC61000−4−2 Level 4 ±12 kV Contact Discharge • Low Channel Input Capacitance of 0.85 pF Typical • Minimal Capacitance Change with Temperature and Voltage • Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for • • • SC−74 SO SUFFIX CASE 318F MSOP−10 MR SUFFIX CASE 846AE SC70−6 S7 SUFFIX CASE 419AD Features ♦ SOT−143 SR SUFFIX CASE 318A Differential Dignals Each I/O Pin Can Withstand Over 1000 ESD Strikes* SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant XXXMG G XXXMG G 1 1 XXX M G = Specific Device Code = Date Code = Pb−Free Package 10 XXXX AYWG G 1 Applications • USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks and Peripherals • IEEE1394 Firewire® Ports at 400 Mbps/800 Mbps • DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs, LCD Displays • Serial ATA Ports in Desktop PCs and Hard Disk Drives • PCI Express Ports • General Purpose High−Speed Data Line ESD Protection XXXX A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. *Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes. © Semiconductor Components Industries, LLC, 2011 June, 2018 − Rev. 14 1 Publication Order Number: CM1213A/D CM1213A, SZCM1213A BLOCK DIAGRAM VP CH1 VN CM1213A−01SO VP CH4 CH1 VP CH3 CH2 VN CM1213A−02SR CM1213A−02SO CH1 VN CH2 CM1213A−04MR CM1213A−04S7 Table 1. ORDERING INFORMATION Marking Package Shipping† 231 SOT23−3 (Pb−Free) 3,000 / Tape & Reel D232 SOT143−4 (Pb−Free) 3,000 / Tape & Reel CM1213A−02SO 233 SC−74 (Pb−Free) 3,000 / Tape & Reel CM1213A−04S7 D38 SC70−6 (Pb−Free) 3,000 / Tape & Reel CM1213A−04MR D237 MSOP−10 (Pb−Free) 4,000 / Tape & Reel Device CM1213A−01SO SZCM1213A−01SO* CM1213A−02SR SZCM1213A−02SR* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 CM1213A, SZCM1213A PACKAGE/PINOUT DIAGRAMS Table 2. PIN DESCRIPTIONS 1−Channel, 3−Lead SOT23−3 Package (CM1213A−01SO) Top View Pin Name Type Description 1 CH1 I/O 2 VP PWR Positive Voltage Supply Rail 3 VN GND Negative Voltage Supply Rail CH1 (1) ESD Channel 1 231 VP (2) 3 VN (3) 2 3−Lead SOT23−3 2−Channel, 4−Lead SOT143−4 Package (CM1213A−02SR) Pin Name Type 1 VN GND Description 2 CH1 I/O ESD Channel 3 CH2 I/O ESD Channel 4 VP PWR Negative Voltage Supply Rail Top View 1 CH1 (2) 2 4 VP (4) 3 CH2 (3) D232 VN (1) Positive Voltage Supply Rail 2−Channel, SC−74 Package (CM1213A−02SO) Pin Name Type 1 NC − 2 VN GND 3 CH1 I/O ESD Channel 4 CH2 I/O ESD Channel 5 NC − 6 VP PWR 4−Lead SOT143−4 Description No Connect Negative Voltage Supply Rail Top View NC (1) 1 VN (2) 2 CH1 (3) 3 233 No Connect 6 VP (6) 5 NC (5) 4 CH2 (4) Positive Voltage Supply Rail 6−Lead SC−74 4−Channel, 6−Lead SC70−6 (CM1213A−04S7) Pin Name Type 1 CH1 I/O Description 2 VN GND 3 CH2 I/O ESD Channel 4 CH3 I/O ESD Channel 5 VP PWR 6 CH4 I/O ESD Channel Negative Voltage Supply Rail Top View ESD Channel 1 VN 2 CH2 3 D38 Positive Voltage Supply Rail CH1 6 CH4 5 VP 4 CH3 6−Lead SC70−6 4−Channel, 10−Lead MSOP−10 Package (CM1213A04MR) Pin Name Type 1 CH1 I/O 2 NC − 3 VP PWR CH2 I/O NC − 6 CH3 I/O 7 NC − 8 VN GND 9 CH4 I/O 10 NC − ESD Channel No Connect Top View Positive Voltage Supply Rail CH1 NC VP CH2 NC ESD Channel No Connect ESD Channel 1 2 3 4 5 D238 4 5 Description 10 9 8 7 6 NC CH4 VN NC CH3 10−Lead MSOP−10 No Connect Negative Voltage Supply Rail ESD Channel No Connect www.onsemi.com 3 CM1213A, SZCM1213A SPECIFICATIONS Table 3. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units 6.0 V Operating Temperature Range –40 to +150 °C Storage Temperature Range –65 to +150 °C Operating Supply Voltage (VP − VN) DC Voltage at any channel input (VN − 0.5) to (VP + 0.5) Package Power Rating SOT23−3, SOT143−4, SC−74, and SC70−6 Packages MSOP−10 Package 225 400 ESD IEC 61000−4−2 Contact IEC 61000−4−2 Air ISO 10605 330 pF / 330 W Contact ISO 10605 330 pF / 2 kW Contact ISO 10605 150 pF / 2 kW Contact ±12 ±12 ±9 ±22 ±25 V mW kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1) Symbol Parameter Conditions VP Operating Supply Voltage (VP−VN) IP Operating Supply Current (VP−VN) = 3.3 V VF Diode Forward Voltage Top Diode Bottom Diode IF = 8 mA; TA = 25°C Channel Leakage Current Channel Input Capacitance ILEAK CIN DCIN VCL RDYN Min Typ Max Units 3.3 5.5 V 8.0 mA V 0.60 0.60 0.80 0.80 0.95 0.95 TA = 25°C; VP = 5 V, VN = 0 V 0.1 1.0 mA At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V (Note 2) 0.85 1.2 pF Channel Input Capacitance Matching At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V (Note 2) 0.02 Channel Clamp Voltage Positive Transients Negative Transients TA = 25°C, IPP = 1A, tP = 8/20 mS (Note 2) Dynamic Resistance Positive Transients Negative Transients IPP = 1A, tP = 8/20 mS Any I/O pin to Ground (Note 2) pF V +10 –1.7 W 0.9 0.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. All parameters specified at TA = 25°C unless otherwise noted. 2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded. 3. These measurements performed with no external capacitor on VP (VP floating). www.onsemi.com 4 CM1213A, SZCM1213A PERFORMANCE INFORMATION Input Channel Capacitance Performance Curves Figure 1. Typical Variation of CIN vs. VIN (f = 1 MHz, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN, 255C) Figure 2. Typical Variation of CIN vs. Temp (f = 1 MHz, VIN = 30 mV, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN) www.onsemi.com 5 CM1213A, SZCM1213A PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (nominal conditions unless specified otherwise, 50 Ohm Environment) Figure 3. Insertion Loss (S21) vs. Frequency (0 V DC Bias, VP=3.3 V) Figure 4. Insertion Loss (S21) vs. Frequency (2.5 V DC Bias, VP=3.3 V) www.onsemi.com 6 CM1213A, SZCM1213A APPLICATION INFORMATION Design Considerations In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically a connector) and the ESD protection device. Refer to Application of Positive ESD Pulse between Input Channel and Ground, which illustrates an example of a positive ESD pulse striking an input channel. The parasitic series inductance back to the power supply is represented by L1 and L2. The voltage VCL on the line being protected is: VCL = Fwd Voltage Drop of D1 + VSUPPLY + L1 x d(IESD) / dt + L2 x d(IESD) / dt where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage. An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge per the IEC61000−4−2 standard results in a current pulse that rises from zero to 30 Amps in 1 ns. Here d(IESD)/dt can be approximated by DIESD/Dt, or 30/(1x10−9). So just 10 nH of series inductance (L1 and L2 combined) will lead to a 300 V increment in VCL! Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically increased negative voltage on the line being protected. The CM1213A has an integrated Zener diode between VP and VN. This greatly reduces the effect of supply rail inductance L2 on VCL by clamping VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when VP is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 mF ceramic chip capacitor be connected between VP and the ground plane. As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the ESD device to minimize stray series inductance. Additional Information See also ON Semiconductor Application Note “Design Considerations for ESD Protection”, in the Applications section. L2 POSITIVE SUPPLY RAIL VP ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ D1 0.22 mF ONE CHANNEL D2 OF CM1213 VN VCC PATH OF ESD CURRENT PULSE IESO LINE BEING PROTECTED L1 0A SYSTEM OR CIRCUITRY BEING PROTECTED CHANNEL INPUT 25 A ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ VCL GROUND RAIL CHASSIS GROUND Figure 5. Application of Positive ESD Pulse between Input Channel and Ground www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° c SEE VIEW C GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: STATUS: STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 98ASB42226B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 SOT−23 (TO−236) http://onsemi.com 1 STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98ASB42226B PAGE 2 OF 2 ISSUE REVISION DATE AJ ADDED STYLE 27. REQ. BY P. LEM. 07 JUL 2004 AK OBSOLETED −09 VERSION. REQ. BY D. TRUHITTE. 14 SEP 2004 AL ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ. BY HONG XIAO. 27 MAY 2005 AM REDREW LEAD SIDE VIEW. REQ BY DARRELL TRUHITTE. 26 AUG 2005 AN REINTRODUCED LABELS FOR DIMENSION C. REQ. BY D. TRUHITTE. 14 OCT 2005 AP ADDED THETA DEGREE VALUES TO DIMENSION TABLE. REQ. BY D. TRUHITTE. 17 NOV 2009 AR MODIFIED DIMENSIONS C AND L. REQ. BY M. YOU. 10 OCT 2016 AS ADDED STYLE 28. REQ. BY E. ESTILLER. 30 JAN 2018 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2018 January, 2018 − Rev. AS Case Outline Number: 318 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−143 CASE 318A−06 ISSUE U DATE 07 SEP 2011 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIM­ UM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO­ TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, AND GATE BURRS SHALL NOT EXCEED 0.25 PER SIDE. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH AND PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. 5. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 6. DATUMS A AND B ARE DETERMINED AT DATUM H. e D A GAUGE PLANE E SEATING PLANE L L2 DETAIL A E1 b1 e1 B 3X b 0.20 TOP VIEW H c A A1 c 0.10 C C SIDE VIEW C A-B D M DETAIL A SEATING PLANE END VIEW MILLIMETERS MIN MAX 0.80 1.12 0.01 0.15 0.30 0.51 0.76 0.94 0.08 0.20 2.80 3.05 2.10 2.64 1.20 1.40 1.92 BSC 0.20 BSC 0.35 0.70 0.25 BSC DIM A A1 b b1 c D E E1 e e1 L L2 GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT 1.92 XXX MG G 1 4X 0.75 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 2.70 0.20 3X 0.96 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.54 DIMENSIONS: MILLIMETERS STYLE 1: PIN 1. 2. 3. 4. COLLECTOR EMITTER EMITTER BASE STYLE 2: PIN 1. 2. 3. 4. SOURCE DRAIN GATE 1 GATE 2 STYLE 3: PIN 1. 2. 3. 4. GROUND SOURCE INPUT OUTPUT STYLE 4: PIN 1. 2. 3. 4. STYLE 7: PIN 1. 2. 3. 4. SOURCE GATE DRAIN SOURCE STYLE 8: PIN 1. 2. 3. 4. SOURCE GATE DRAIN N/C STYLE 9: PIN 1. 2. 3. 4. GND IOUT VCC VREF STYLE 10: PIN 1. DRAIN 2. N/C 3. SOURCE 4. GATE DOCUMENT NUMBER: STATUS: 98ASB42227B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 OUTPUT GROUND GROUND INPUT SOT−143 http://onsemi.com 1 STYLE 5: PIN 1. 2. 3. 4. SOURCE DRAIN GATE 1 SOURCE STYLE 6: PIN 1. 2. 3. 4. GND RF IN VREG RF OUT STYLE 11: PIN 1. SOURCE 2. GATE 1 3. GATE 2 4. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98ASB42227B PAGE 2 OF 2 ISSUE U REVISION REDREW TO JEDEC STANDARDS. ADDED SOLDER FOOTPRINT. REQ. BY D. TRUHITTE. DATE 07 SEP 2011 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 06U Case Outline Number: 318A MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N 6 DATE 08 JUN 2012 1 SCALE 2:1 D 6 5 4 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. E HE 1 b e 0.05 (0.002) q c A L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 2.4 0.094 XXX MG G 0.95 0.037 1.9 0.074 XXX M G 0.95 0.037 0.7 0.028 1.0 0.039 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° SCALE 10:1 = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: STATUS: 98ASB42973B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 SC−74 http://onsemi.com 1 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98ASB42973B PAGE 2 OF 2 ISSUE REVISION DATE D CHANGE OF OWNERSHIP FROM MOTOROLA TO ON SEMICONDUCTOR. DIM A WAS: 2.70−3.10 MM/0.1063−0.1220 IN. DIM C WAS: 1.000−1.30 MM/0.0394−0.0511IN DIM D WAS: 0.25−0.40 MM/0.0098−0.0157 IN. REQ. BY D. TRUHITTE 14 MAR 01 E CHANGED “USED ON” WAS: SC−59, 6 LEAD. REQ.BY D. TRUHITTE. 27 MAR 01 F ADDED STYLE 3. REQ. BY S. BACHMAN. 23 APR 01 G ADDED STYLE 4. REQ. BY S. BACHMAN. 28 AUG 02 H ADDED STYLE 5. REQ. BY B. BLACKMON. 21 OCT 02 J ADDED STYLE 6. REQ. BY B. BLACKMON. 09 JAN 03 K ADDED STYLES 7 & 8. REQ. BY S. CHANG 03 JUN 03 L ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ. BY HONG XIAO. 27 MAY 05 M ADDED STYLE 9. REQ. BY W. MEADOWS. 11 APR 2006 N ADDED STYLES 10 & 11. REQ. BY Y. KALDERON. 08 JUN 2012 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. N Case Outline Number: 318F MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88 (SC−70 6 Lead), 1.25x2 CASE 419AD−01 ISSUE A SYMBOL D e e E1 E DATE 07 JUL 2010 MIN MAX A 0.80 1.10 A1 0.00 0.10 A2 0.80 1.00 b 0.15 0.30 c 0.10 0.18 D 1.80 2.00 2.20 E 1.80 2.10 2.40 E1 1.15 1.25 1.35 0.65 BSC e 0.26 L TOP VIEW NOM 0.36 L1 0.42 REF L2 0.15 BSC 0.46 θ 0º 8º θ1 4º 10º q1 A2 A q b q1 A1 SIDE VIEW L L1 c L2 END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-203. DOCUMENT NUMBER: STATUS: REFERENCE: 98AON34266E ON SEMICONDUCTOR STANDARD http://onsemi.com SC−88 (SC−70 6 LEAD), 1.25X21 © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON34266E PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM POD #SC706−023−02 TO ON SEMICONDUCTOR. REQ. BY B. BERGMAN. 19 DEC 2008 A ADDED SC−88 TO DESCRIPTION AND TITLE. REQ. BY D. TRUHITTE. 07 JUL 2010 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 01A Case Outline Number: 419AD MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MSOP10, 3x3 CASE 846AE ISSUE A SCALE 1:1 DATE 20 JUN 2017 A D 10 E PIN ONE INDICATOR 6 ÉÉ ÉÉ 1 F B q E1 L L2 C L1 DETAIL A 5 e 10X TOP VIEW b 0.08 C B M S A S DETAIL A A C c END VIEW SEATING PLANE SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 10X 10X 0.29 MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 0.05 0.15 0.75 0.85 0.95 0.17 −−− 0.27 0.13 −−− 0.23 2.90 3.00 3.10 4.75 4.90 5.05 2.90 3.00 3.10 0.50 BSC 0.40 0.70 0.80 0.95 REF 0.25 BSC 0° −−− 8° DIM A A1 A2 b c D E E1 e L L1 L2 q A1 0.10 C NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.10 MM IN EXCESS OF MAXIMUM MATERIAL CONDITION. 4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 MM PER SIDE. DIMENSION E DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 MM PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM F. 5. DATUMS A AND B TO BE DETERMINED AT DATUM F. 6. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. GENERIC MARKING DIAGRAM* 0.85 10 5.35 XXXX AYWG G 1 0.50 PITCH XXXX A Y W G DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present and may be in either location. Some products may not follow the Generic Marking. DOCUMENT NUMBER: STATUS: 98AON34098E ON SEMICONDUCTOR STANDARD REFERENCE: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 MSOP10, 3X3 http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON34098E PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM POD #MSOP10−013−01 TO ON SEMICONDUCTOR. REQ. BY B. BERGMAN. 19 DEC 2008 A MODIFIED DRAWING TO ON SEMICONDUCTOR JEDEC STANDARD AND ADDED SOLDERING FOOTPRINT. REQ. BY M. PREJZEK. 20 JUN 2017 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2017 June, 2017 − Rev. A Case Outline Number: 846AE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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