EFC2J004NUZTDG

EFC2J004NUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 mΩ, 14 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS Features  2.5 V Drive  2 kV ESD HBM  Common-Drain Type  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance RSS(on) Max 7.1 mΩ @ 4.5 V 7.7 mΩ @ 3.8 V 12 V 12.4mΩ @ 2.5 V ELECTRICAL CONNECTION N-Channel 4, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Notes 1, 2) Source Current (DC) Source Current (Pulse) PW  10s, duty cycle  1% Total Dissipation (Note 2) Junction Temperature Storage Temperature Symbol VSSS VGSS IS 5 Value ISP PT Tj Tstg 12 8 14 Unit V V A 60 A 1.5 W 150 55 to +150 C C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient (Note 2) 14 A 9.5 mΩ @ 3.1 V Applications  1-Cell Lithium-ion Battery Charging and Discharging Switch Parameter Source to Source Voltage Gate to Source Voltage IS Max Symbol Value RJA Unit 83 2 1, 3 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 WLCSP6, 2.11x1.18x0.10 GENERIC MARKING DIAGRAM C/W NA AYWZZ 2 Note 2 : Surface mounted on ceramic substrate (5000 mm  0.8 mm). NA A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2017 February 2017 - Rev. 1 1 Publication Order Number : EFC2J004NUZ/D EFC2J004NUZ ELECTRICAL CHARACTERISTICS at Ta  25C (Notes 3, 4) Parameter Symbol Value Conditions min Source to Source Breakdown Voltage V(BR)SSS IS = 1 mA, VGS = 0 V Test Circuit 1 Zero-Gate Voltage Source Current ISSS VSS = 10 V, VGS = 0 V Test Circuit 1 Gate to Source Leakage Current IGSS VGS(th) VGS = 8 V, VSS = 0 V VSS = 6 V, IS = 1 mA Test Circuit 3 0.4 IS = 5 A, VGS = 4.5 V Test Circuit 4 3.7 IS = 5 A, VGS = 3.8 V Test Circuit 4 IS = 5 A, VGS = 3.1 V Test Circuit 4 IS = 5 A, VGS = 2.5 V Test Circuit 4 Gate Threshold Voltage Static Source to Source On-State Resistance (Note 4) Turn-ON Delay Time RSS(on) Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf typ 12 Total Gate Charge Qg VSS = 6 V, VGS = 4.5 V, IS = 14 A Test Circuit 6 Forward Source to Source Voltage VF(S-S) IS = 3 A, VGS = 0 V Test Circuit 7 Unit V Test Circuit 2 VSS = 5 V, VGS = 3.8 V, IS = 5 A Rg = 10 kΩ Test Circuit 5 max 1 A 1 A 1.3 V 5.4 7.1 mΩ 4.1 5.9 7.7 mΩ 4.6 6.7 9.5 mΩ 5.8 8.4 12.4 mΩ 15 s 35 s 100 s 75 s 36 nC 0.76 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 4 : Mounted on ON Semiconductor board. www.onsemi.com 2 EFC2J004NUZ Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 V(BR)SSS / ISSS S2 S2 G2 G2 A G1 VSS G1 A VGS S1 S1 Test Circuit 3 VGS(th) When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 4 RSS(on) S2 S2 IS G2 G2 A When FET1 is measured, Gate and Source of FET2 are short-circuited. V VGS G1 VSS G1 VGS S1 S1 Test Circuit 5 td(on), tr,td(off), tf Test Circuit 6 Qg S2 S2 RL A G2 G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. V IG =1mA G1 G1 Rg S1 VSS S1 PG DC Test Circuit 7 VF(S-S) S2 IS G2 V VGS=0V G1 S1 RL When FET1 is measured,+4.5V is added to VGS of FET2. When FET2 is measured, the position of FET1 and FET2 is switched. www.onsemi.com 3 VSS When FET1 is measured, Gate and Source of FET2 are short-circuited. EFC2J004NUZ IS -- VSS VSS=6V V = S 4.0 VG 3.0 2.0 9 6 3 1.0 0 0.01 0.02 0.03 0.05 0.04 0 0.06 0 0.4 0.2 Source to Source Voltage, VSS -- V Static Source to Source On-State Resistance, RSS(on) -- m Static Source to Source On-State Resistance, RSS(on) -- m 8 7 6 5 4 1 3 2 4 6 5 7 8 =5A V, I S =4.5 VGS 6 5A , I S= =3.8V VGS 4 --40 --20 0.001 20 40 60 80 100 Switching Time, SW Time -- s --25 C 0.4 0.2 0.8 0.6 1.0 ff) t d(o 3 2 tf 10 7 5 tr ) n t d(o 3 1.0 1.0 VSS=5V VGS=3.8V IS=5A 2 100 7 5 3 2 3.5 2.5 2.0 1.5 0.1 7 5 3 2 0.5 5 10 15 20 25 30 35 7 2 10 40 ISP=60A (PW10s) IS=14A DC 10 tio Operation in this area is limited by RSS(on). 10 10 s 0 s 1m s m 0m s s 10 op era 1.0 7 5 3 2 1.0 0 5 SOA 10 7 5 3 2 Source Current, IS -- A 3.0 0 3 Gate Resistance, Rg -- k VSS=6V IS=14A 4.0 160 2 100 7 5 1.2 VGS -- Qg 4.5 140 3 2 0 120 SW Time -- Rg 1000 7 5 Forward Source to Source Voltage, VF(S-S) -- V Gate to Source Voltage, VGS -- V 0 Ambient Temperature, Ta -- C 25C 5C Ta= 7 Source Current, IS -- A 0.01 7 5 3 2 =5A V, I S =3.1 VGS 2 --60 VGS=0V 0.1 7 5 3 2 2.0 1.8 =5A V, I S 5 =2. V GS 10 8 IS -- VF(S-S) 1.0 7 5 3 2 1.6 1.4 12 Gate to Source Voltage, VGS -- V 10 7 5 3 2 1.2 1.0 RSS(on) -- Ta 14 Ta=25C IS=5A 9 0.8 0.6 Gate to Source Voltage, VGS -- V RSS(on) -- VGS 10 3 25C 5 2. Ta=75C V Source Current, IS -- A 3.8 12 3.1 V Source Current, IS -- A 5.0 0 IS -- VGS 15 4.5 V Ta=25C --25C 6.0 n( Ta =2 5 C) Ta=25C Single pulse Surface mounted on ceramic substrate (5000mm20.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Source to Source Voltage, VSS -- V Total Gate Charge, Qg -- nC www.onsemi.com 4 2 3 EFC2J004NUZ PT -- Ta 1.6 Surface mounted on ceramic substrate (5000mm20.8mm) Total Dissipation, PT -- W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200 Thermal Resistance, RJA -- ºC/W Ambient Temperature, Ta -- C 100 7 5 RJA -- Pulse Time Duty Cycle=0.5 3 2 0.2 10 7 5 0.1 3 0.05 0.02 2 1.0 7 5 0.01 lse e Pu l Sing 3 Surface mounted on ceramic substrate (5000mm20.8mm) 2 0.1 0.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 Pulse Time, PT -- s www.onsemi.com 5 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 EFC2J004NUZ PACKAGE DIMENSIONS unit : mm WLCSP6, 2.11x1.18x0.10 CASE 567NP ISSUE B D PIN A1 REFERENCE 2X 0.05 C 2X 0.05 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B DIM A b b1 b2 D E e e2 E TOP VIEW A 0.05 C MILLIMETERS MIN NOM MAX 0.08 0.10 0.12 0.22 0.25 0.28 0.33 0.27 0.30 0.635 0.575 0.605 2.11 BSC 1.18 BSC 0.55 BSC 0.6775 BSC RECOMMENDED SOLDERING FOOTPRINT* 0.05 C C SIDE VIEW e2 4X 1 2 3 SEATING PLANE b2 0.05 M e 4X 0.605 2X 0.25 PACKAGE OUTLINE 0.55 PITCH C A B 4X 0.30 1 0.678 PITCH b1 C A B 4X 0.05 M 6 5 4 2X 0.05 DIMENSIONS: MILLIMETERS b M C A B *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 ORDERING INFORMATION Device EFC2J004NUZTDG Marking Package Shipping (Qty / Packing) NA WLCSP6, 2.11x1.18x0.10 (Pb-Free / Halogen Free) 5,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the EFC2J004NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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