EFC3J018NUZTDG

EFC3J018NUZ Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 20 V, 4.7 mΩ, 23 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. VSSS Features • 2.5 V drive • 2 kV ESD HBM • Common-Drain Type • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance RSS(on) Max 4.7 mΩ @ 4.5 V 4.75 mΩ @ 4.0 V 20 V 4.9 mΩ @ 3.8 V 9.0 mΩ @ 2.5 V ELECTRICAL CONNECTION N-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1) Maximum Operating Gate to Source Voltage (Note 2) Source Current (DC) Source Current (Pulse) PW ≤ 100 µs, duty cycle ≤ 1% Total Dissipation (Note 3) Junction Temperature Storage Temperature Symbol VSSS VGSS 4, 6 Value 20 ±12 Unit V V VGSS(OP) ±8 V IS 23 A 100 A 2.5 W °C °C ISP PT Tj Tstg 150 −55 to +150 Rg 5 Rg 2 1, 3 Rg=200Ω Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Note 2 : Functional operation above the stresses listed in the recommended operating ranges is not implied. Extended exposure to stresses beyond the recommended operating ranges limits may affect device reliability Symbol Value RθJA 50 Note 3 : Surface mounted on ceramic substrate (5000 mm × 0.8 mm). 2 © Semiconductor Components Industries, LLC, 2016 March 2018 - Rev. 1 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 MARKING MT WLCSP6, 1.77x3.05 LOT No. MT = Device Code THERMAL RESISTANCE RATINGS Parameter Junction to Ambient (Note 3) 23 A 5.4 mΩ @ 3.1 V Applications • 1-2 Cells Lithium-ion Battery Charging and Discharging Switch Parameter Source to Source Voltage Gate to Source Voltage IS Max 1 Unit °C/W ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number : EFC3J018NUZ/D EFC3J018NUZ ELECTRICAL CHARACTERISTICS at Ta = 25°C (Notes 4, 5) Parameter Source to Source Breakdown Voltage Symbol Value Conditions min typ max V(BR)SSS ISSS IS = 1 mA, VGS = 0 V Test Circuit 1 Zero-Gate Voltage Source Current VSS = 20 V, VGS = 0 V Test Circuit 1 1 µA Gate to Source Leakage Current IGSS VGS = ±8 V, VSS = 0 V Test Circuit 2 ±1 µA Gate Threshold Voltage VGS(th) VSS = 10 V, IS = 1 mA Test Circuit 3 0.5 1.3 V IS = 5 A, VGS = 4.5 V Test Circuit 4 2.5 3.6 4.7 mΩ IS = 5 A, VGS = 4.0 V Test Circuit 4 2.56 3.65 4.75 mΩ IS = 5 A, VGS = 3.8 V Test Circuit 4 2.6 3.75 4.9 mΩ IS = 5 A, VGS = 3.1 V Test Circuit 4 2.9 4.15 5.4 mΩ IS = 5 A, VGS = 2.5 V Test Circuit 4 3.3 4.75 9.0 mΩ Static Source to Source On-State Resistance Turn-ON Delay Time RSS(on) Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg VSS = 10 V, VGS = 4.5 V, IS = 23 A Test Circuit 6 Forward Source to Source Voltage VF(S-S) IS = 3 A, VGS = 0 V VSS = 10 V, VGS = 4.5 V, IS = 3 A Test Circuit 5 Test Circuit 7 20 Unit V 280 ns 890 ns 4,100 ns 2,800 ns 75 nC 0.74 1.2 V Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 5 : Refer to the JIS 7030 measuring methods for transistors for measuring. www.onsemi.com 2 EFC3J018NUZ Test circuits are example of measuring FET1 side When FET2 is measured, the position of FET1 and FET2 is switched. www.onsemi.com 3 EFC3J018NUZ www.onsemi.com 4 EFC3J018NUZ www.onsemi.com 5 EFC3J018NUZ PACKAGE DIMENSIONS unit : mm 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 ORDERING INFORMATION Device EFC3J018NUZTDG Marking Package Shipping (Qty / Packing) MT WLCSP6, 1.77 × 3.05 (Pb-Free / Halogen Free) 5,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the EFC3J018NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. www.onsemi.com 6