EFC4K110NUZTDG

EFC4K110NUZ MOSFET – Power, Dual, N-Channel, for 1-2 Cells Lithium-ion Battery Protection 24 V, 2.95 mW, 25 A www.onsemi.com Introduction This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. VSSS RSS(ON) MAX IS MAX 24 V 2.95 mW @ 4.5 V 25 A 3.0 mW @ 3.8 V Features • • • • • 4.7 mW @ 3.1 V 2.5 V Drive 2 kV ESD HBM Common-Drain Type ESD Diode-Protected Gate This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant 7.4 mW @ 2.5 V ELECTRICAL CONNECTION 6, 7, 9, 10 Applications • 1-2 Cells Lithium-ion Battery Charging and Discharging Switch 1: Source1 2: Source1 3: Gate1 4: Source1 5: Source1 6: Source2 7: Source2 8: Gate2 9: Source2 10: Source2 8 Specifications 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) (Note 1) Parameter Symbol Value Unit Source to Source Voltage VSSS 24 V Gate to Source Voltage VGSS ±12 V N-Channel Source Current (DC) IS 25 A PIN ASSIGNMENT Source Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% ISP 100 A Total Dissipation (Note 1) PT 2.5 W 1, 2, 4, 5 1 Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 WLCSP10 (3.20 x 2.10 x 0.14) CASE 567XT Junction to Ambient (Note 1) Symbol Value Unit RθJA 50 °C/W 1. Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm). 7 4 9 5 8 10 (Bottom View) MARKING DIAGRAM THERMAL RESISTANCE RATINGS Parameter 6 2 PH AYWZZ PH A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2018 July, 2019 − Rev. 0 1 Publication Order Number: EFC4K110NUZ/D EFC4K110NUZ ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Source to Source Breakdown Voltage V(BR)SSS Conditions Min IS = 1 mA, VGS = 0 V Typ Max 24 Unit V Zero-Gate Voltage Source Current ISSS VSS = 19.2 V, VGS = 0 V Gate to Source Leakage Current IGSS VGS = ±8 V, VSS = 0 V Gate Threshold Voltage VGS(th) VSS = 10 V, IS = 1 mA 0.4 1.3 V Static Source to Source On-State Resistance RSS(on) IS = 5 A, VGS = 4.5 V 1.6 2.4 2.95 mW IS = 5 A, VGS = 3.8 V 1.7 2.5 3.0 mW IS = 5 A, VGS = 3.1 V 2.0 2.9 4.7 mW IS = 5 A, VGS = 2.5 V 2.2 3.6 7.4 mW Gate Resistance Total Gate Charge Turn-ON Delay Time Rg f = 1 MHz Qg Fall Time Forward Source to Source Voltage ±10 mA W VSS = 11.5 V, VGS = 4.5 V, IS = 5 A 49 nC VSS = 11.5 V, VGS = 4.5 V, RL = 2.3 W RG = 0 W Switching Test Circuit 0.6 ms 1.6 ms td(off) 7.3 ms tf 3.2 ms tr Turn-OFF Delay Time mA 310 td(on) Rise Time 1 VF(S-S) IS = 3 A, VGS = 0 V 0.75 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. SWITCHING TEST CIRCUIT td(on), tr, td(off), tf S2 RL G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. Rg V G1 VSS S1 Figure 1. Switching Test Circuit www.onsemi.com 2 EFC4K110NUZ DEPENDENCY FIGURES 6 5 4.5 V 4.0 V 4 3.8 V 3 2 VSS = 6 V Single Pulse 9 Source Current, IS (A) Source Current, IS (A) 10 TA = 25°C Single Pulse VGS = 2.5 V 1 8 TA = 75°C 7 6 25°C 5 4 −25°C 3 2 1 0 0.000 0.005 0.010 0.015 0 0.0 0.020 Figure 2. On-Region Characteristics 0.6 1.0 0.8 1.2 1.4 1.6 1.8 Figure 3. Transfer Characteristics 5.5 5.0 IS = 5 A Single Pulse 4.5 4.0 Static Source-to-Source On-State Resistance, RSS(on) (mW) Static Source-to-Source On-State Resistance, RSS(on) (mW) 0.4 Gate-to-Source Voltage, VGS (V) Source-to-Source Voltage, VSS (V) TA = 75°C 3.5 25°C 3.0 2.5 2.0 −25°C 1.5 1.0 0.2 1 2 3 4 6 5 7 Gate-to-Source Voltage, VGS (V) IS = 5 A Single Pulse 5.0 4.5 VGS = 2.5 V 3.1 V 4.0 3.5 3.0 3.8 V 2.5 4.5 V 2.0 1.5 1.0 −60 −40 −20 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA (5C) 8 Figure 4. On-Resistance vs. Gate-to-Source Voltage Figure 5. On-Resistance vs. Temperature 10 Switching Time, S/W (ms) Source Current, IS (A) VGS = 0 V Single Pulse TA = 75°C 1 25°C 0.1 −25°C TA = 25°C VSS = 11.5 V VGS = 4.5 V IC = 5 A Single Pulse 20 td(off) 10 tf tr td(on) 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 0 200 400 600 800 1000 Gate Resistance, Rg (W) Forward Source-to-Source Voltage, VF(S-S) (V) Figure 6. Forward Source-to-Source Voltage vs. Current Figure 7. Switching Time vs. Gate Resistance (1) www.onsemi.com 3 EFC4K110NUZ Switching Time, S/W (ms) TA = 25°C VSS = 11.5 V VGS = 4.5 V IC = 5 A Single Pulse 100 td(off) Gate-to-Source Voltage, VGS (V) 4.5 1000 tf tr 10 1 td(on) 1 TA = 25°C VSS = 11.5 V IS = 5 A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 0 10 Gate Resistance, Rg (kW) 1 ms 10 ms DC Operation 100 ms TA = 25°C Single Pulse When mounted on ceramic substrate (5000 mm2 x 0.8 mm) 0.01 0.01 0.1 1 Total Dissipation, PT (W) Source Current, IS (A) 10 ms 100 ms 0.1 50 60 3.0 IS = 25 A Operation in this area is limited 40 Figure 9. Gate-to-Source Voltage vs. Total Charge ISP = 100 A (PW ≤ 10 m) 10 1 30 Total Gate Charge, Qg (nC) Figure 8. Switching Time vs. Gate Resistance (2) 100 20 2.5 2.0 1.5 1.0 0.5 0.0 10 Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) 0 20 40 60 80 100 120 140 160 Source-to-Source Voltage, VSS (V) Ambient Temperature, TA (5C) Figure 10. Safe Operating Area Figure 11. Total Dissipation vs. Temperature Thermal Resistance, RqJA (5C/W) 100 Duty Cycle = 50% 10 20% 10% 5% 2% 1 1% Single Pulse 0.1 0.00001 Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) 0.0001 0.001 0.01 Pulse Time, PT (s) Figure 12. Thermal Response www.onsemi.com 4 0.1 1 10 EFC4K110NUZ ORDERING INFORMATION Device EFC4K110NUZTDG Marking Package Shipping† (Qty / Packing) PH WLCSP10, 3.20 x 2.10 x 0.14 (Pb-Free / Halogen Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Note on usage: Since the EFC4K110NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP10 3.2x2.1x0.14 CASE 567XT ISSUE O GENERIC MARKING DIAGRAM* XX AYWZZG DOCUMENT NUMBER: DESCRIPTION: XX A Y W ZZ G = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code = Pb−Free Package 98AON05933H WLCSP10 3.2x2.1x0.14 DATE 02 APR 2019 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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