EMD5DXV6T5G

DATA SHEET www.onsemi.com Dual Bias Resistor Transistors (2) (3) R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMD5DXV6T5G Q2 R2 (5) 6 Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW THERMAL CHARACTERISTICS TA = 25°C Derate above 25°C MARKING DIAGRAM RqJA 350 (Note 1) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature U5 MG G ORDERING INFORMATION Package Shipping† EMD5DXV6T5G SOT−563 (Pb−Free) 8000 / Tape & Reel EMD5DXV6T1G SOT−563 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. mW/°C Thermal Resistance Junction-to-Ambient Total Device Dissipation 3 (Note: Microdot may be in either location) Symbol Total Device Dissipation 2 U5 = Specific Device Code M = Month Code G = Pb−Free Package and Q2, − minus sign for Q1 (PNP) omitted) Characteristic (One Junction Heated) 54 SOT−563 CASE 463A 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 Collector Current (6) 1 Features Rating R1 (4) Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating These Devices are Pb−Free and are RoHS Compliant R2 Q1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD5DXV6 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. • • • • • • (1) mW/°C RqJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad © Semiconductor Components Industries, LLC, 2014 April, 2022 − Rev. 2 1 Publication Order Number: EMD5DXV6/D EMD5DXV6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) IEBO − − 1.0 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 20 35 − VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VOH 4.9 − − Vdc Input Resistor R1 3.3 4.7 6.1 kW Resistor Ratio R1/R2 0.38 0.47 0.56 Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) IEBO − − 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 80 140 − VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 33 47 61 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) PD , POWER DISSIPATION (MILLIWATTS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 250 200 150 100 50 0 -50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2 150 EMD5DXV6T5G 1000 1 VCE = 10 V IC/IB = 10 TA=75°C 25°C 0.1 0.01 TA=75°C hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6 PNP TRANSISTOR -25°C 10 20 30 50 40 60 100 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 1000 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25°C 10 Cob , CAPACITANCE (pF) 10 1 IC, COLLECTOR CURRENT (mA) 12 8 6 4 SERIES 1 2 0 -25°C 10 1 0 25°C 100 75°C 10 1 VO = 5 V 0.1 0.01 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 TA=-25°C 25°C 0 Figure 4. Output Capacitance 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 Figure 5. Output Current versus Input Voltage www.onsemi.com 3 12 EMD5DXV6T5G 10 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6 NPN TRANSISTOR 1 25°C TA=-25°C 75°C 0.1 TA=75°C 25°C -25°C 100 0.01 0 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 6. VCE(sat) versus IC Figure 7. DC Current Gain 1 100 f = 1 MHz IE = 0 mA TA = 25°C IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25°C 75°C 0.6 TA=-25°C 10 1 0.1 0.01 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 9. Output Current versus Input Voltage Figure 8. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 10. Input Voltage versus Output Current www.onsemi.com 4 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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