FDB1D7N10CL7
N-Channel Shielded Gate
POWERTRENCH) MOSFET
100 V, 268 A, 1.7 mW
Description
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized to minimize on−state
resistance and yet maintain superior switching performance with best
in class soft body diode.
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VDS
ID MAX
rDS(on) MAX
100 V
268 A
1.7 mΩ
Features
•
•
•
•
•
•
•
•
D (Pin4, tab)
Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A
Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A
Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A
Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
G (Pin1)
S (Pin2, 3, 5, 6, 7)
N−Channel MOSFET
Applications
•
•
•
•
•
•
•
•
•
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated Tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
4
12
3
56
7
D2PAK7 (TO−263 7 LD)
CASE 418AY
1. Gate
2. Source
3. Source
4. Drain
5. Source
6. Source
7. Source
MARKING DIAGRAM
MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Ratings
Unit
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
Drain Current
Continuous (TC = 25°C) (Note 5)
Continuous (TC = 100°C) (Note 5)
Pulsed (Note 4)
268
A
ID
Parameter
190
1390
EAS
Single Pulsed Avalanche Energy
(Note 3)
595
mJ
PD
Power Dissipation
TC = 25°C
TA = 25°C (Note 1a)
250
W
TJ, TSTG
Operating and Storage Temperature
Range
$Y&Z&3&K
FDB
1D7N10CL7
3.8
$Y
&Z
&3
&K
FDB1D7N10CL7
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
−55 to +175
°C
See detailed ordering and shipping information on page 3 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
April, 2018 − Rev. 2
1
Publication Order Number:
FDB1D7N10CL7/D
FDB1D7N10CL7
THERMAL CHARACTERISTICS
Symbol
Ratings
Unit
RqJC
Thermal Resistance, Junction to Case (Note 1)
Parameter
0.6
_C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
100
−
−
V
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
−
57
−
mV/_C
IDSS
Zero Gate Voltage Drain Current Zero
Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
−
−
1
mA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
−
−
±100
nA
2.0
3.1
4.0
V
BVDSS
DBVDSS/DTJ
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 700 μA
VGS(th)/DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 700 μA, referenced to 25°C
−
−9
−
mV/_C
Static Drain to Source On Resistance
VGS = 10 V, ID = 100 A
−
1.5
1.75
mW
VGS = 12 V, ID = 100 A
−
1.4
1.7
VGS = 15 V, ID = 100 A
−
1.33
1.65
VGS = 6 V, ID = 63 A
−
2.2
4.4
VGS = 10 V, ID = 100 A, TJ= 150°C
−
2.65
3.1
VDS = 5 V, ID = 100 A
−
237
−
S
VDS = 50 V, VGS = 0 V, f = 1 MHz
−
8285
11600
pF
RDS(on)
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
5025
7035
pF
Crss
Reverse Transfer Capacitance
−
50
80
pF
0.1
0.8
1.6
Ω
−
39
63
ns
−
33
53
ns
Turn−Off Delay Time
−
85
136
ns
Fall Time
−
36
58
ns
−
116
163
nC
Rg
Gate Resistance
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Turn−On Delay Time
Rise Time
VDD = 50 V, ID = 100 A,
VGS = 10 V, RGEN = 6 Ω
Qg
Total Gate Charge
VGS = 0 V to 10 V
VGS = 0 V to 6 V
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
Qoss
Output Charge
VDD = 50 V,
ID = 100 A
−
74
104
nC
−
37
−
nC
−
24
−
nC
−
333
−
nC
Continuous Drain to Source Diode Forward Current
−
−
268
A
ISM
Pulsed Drain to Source Diode Forward Current
−
−
1390
A
VSD
Source to Drain Diode Forward
Voltage
−
0.9
1.2
V
VDD = 50 V, VGS = 0 V
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
VGS = 0 V, IS = 100 A (Note 2)
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2
FDB1D7N10CL7
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
−
63
101
ns
−
186
298
nC
SOURCE-DRAIN DIODE CHARACTERISTICS
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 50 A, di/dt = 300 A/μs
IF = 50 A, di/dt = 1000 A/μs
−
82
132
ns
−
869
1390
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper.
b) 62.5°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 595 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 63 A, VDD = 90 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 91 A.
4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB1D7N10CL7
FDB1D7N10CL7
D2−PAK−7L
330 mm
24 mm
800 Units
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3
FDB1D7N10CL7
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
9
320
VGS = 10 V
VGS = 6.5 V
240
VGS = 6 V
200
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
160
120
VGS = 5.5 V
80
40
0
VGS = 5 V
6
VGS = 5.5 V
5
4
VGS = 6 V
3
2
1
VGS = 5 V
0
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
7
Normalized Drain to
Source ON−Resistance
ID, Drain Current (A)
280
8
1
2
3
4
0
5
40
80
VDS, Drain-Source Voltage (V)
10
Normalized Drain to
Source ON−Resistance
1.8
1.6
1.4
1.2
1.0
0.6
−75 −50 −25 0
25 50 75 100 125
4
TJ = 150 oC
TJ = 25 oC
3
6
IS, Reverse Drain Current (A)
80
TJ = −55 oC
40
4
15
Figure 4. On−Resistance vs. Gate to Source Voltage
TJ = 25 oC
120
3
12
320
TJ = 175 oC
2
9
VGS, Gate to Source Voltage (V)
200
160
320
2
150 175
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
VDS = 5 V
240
280
6
0
Figure 3. Normalized On−Resistance
vs. Junction Temperature
280
240
ID = 100 A
TJ, Junction Temperature (5C)
320
200
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
8
RDS(on), Drain to Source
ON−Resistance (mW)
ID = 100 A
VGS = 10 V
0.8
ID, Drain Current (A)
160
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.2
0
120
ID, Drain Current (A)
Figure 1. On-Region Characteristics
2.0
VGS = 10 V
VGS = 6.5 V
0
5
6
100
10
TJ = 175 oC
1
TJ = 25 oC
0.1
TJ = −55oC
0.01
0.001
0.0
7
VGS = 0 V
VGS, Gate to Source Voltage (V)
0.2
0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
1.2
FDB1D7N10CL7
TYPICAL CHARACTERISTICS (Continued)
(TJ = 25°C unless otherwise noted)
100000
10
VDD = 50 V
VDD = 25 V
6
VDD = 75 V
4
Coss
1000
100
Crss
10
2
0
Ciss
10000
8
Capacitance (pF)
VGS, Gate to Source Voltage
ID = 100 A
f = 1 MHz
VGS = 0 V
0
30
60
90
1
0.1
120
1
10
100
VDS, Drain to Source Voltage (V)
Qg, Gate Characteristics
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
200
300
250
ID, Drain Current (A)
IAS, Avalanche Current (A)
o
RqJC = 0.6 C/W
100
TJ = 25 oC
10
TJ = 150 oC
1
0.001
0.01
0.1
1
VGS = 10 V
200
150
VGS = 6 V
100
50
10
100
0
25
1000
50
75
tAV, Time in Avalanche (ms)
P(PK), Peak Transient Power (W)
100000
ID, Drain Current (A)
1 ms
1000
5 ms
10 m s
100
0.1
0.1
THIS AREA IS
LIMITED BY rDS(on)
100 m s
SINGLE PULSE
TJ = MAX RATED
1 ms
RqJC = 0.6 oC/W
TC = 25 oC
1
10 ms
CURVE BENT TO
MEASURED DATA
10
150
175
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
20000
10000
1
125
TC, Case Temperature (5C)
Figure 9. Unclamped Inductive Switching Capability
10
100
100 ms
100
TC = 25 oC
10000
1000
100
−5
10
400
SINGLE PULSE
RqJC = 0.6 oC/W
VDS, Drain to Source Voltage [V]
−4
10
−3
10
−2
10
−1
10
1
t, Pulse Width (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
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5
FDB1D7N10CL7
TYPICAL CHARACTERISTICS (Continued)
(TJ = 25°C unless otherwise noted)
r(t), Normalized
Transient Thermal Resistance
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PPDM
DM
t1t1
t2t2
0.01
0.001
Notes:
NOTES:
ZqJCZ(t) =(t)r(t)
× RxqJC
= r(t)
RqJC
qJC
o
RqJCR=
0.6°C/W
qJC = 0.6 C/W
PDM
ZqJC
PeakPeak
TJ =TJP=DM
× ZxqJC
(t)(t)++TTCC
Cycle,
DutyDuty
Cycle,
D =Dt1= /t1t2/ t2
SINGLE PULSE
10−5
10−4
10−3
10−2
10−1
100
t, Rectangular Pulse Duration (s)
Figure 13. Normalized Max Junction to Case Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD)
CASE 418AY
ISSUE C
DATE 15 JUL 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13798G
D2PAK7 (TO−263 7 LD)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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