FDB1D7N10CL7

FDB1D7N10CL7 N-Channel Shielded Gate POWERTRENCH) MOSFET 100 V, 268 A, 1.7 mW Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. www.onsemi.com VDS ID MAX rDS(on) MAX 100 V 268 A 1.7 mΩ Features • • • • • • • • D (Pin4, tab) Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI MSL1 Robust Package Design 100% UIL Tested G (Pin1) S (Pin2, 3, 5, 6, 7) N−Channel MOSFET Applications • • • • • • • • • Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated Tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch 4 12 3 56 7 D2PAK7 (TO−263 7 LD) CASE 418AY 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source MARKING DIAGRAM MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Ratings Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC = 25°C) (Note 5) Continuous (TC = 100°C) (Note 5) Pulsed (Note 4) 268 A ID Parameter 190 1390 EAS Single Pulsed Avalanche Energy (Note 3) 595 mJ PD Power Dissipation TC = 25°C TA = 25°C (Note 1a) 250 W TJ, TSTG Operating and Storage Temperature Range $Y&Z&3&K FDB 1D7N10CL7 3.8 $Y &Z &3 &K FDB1D7N10CL7 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION −55 to +175 °C See detailed ordering and shipping information on page 3 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 April, 2018 − Rev. 2 1 Publication Order Number: FDB1D7N10CL7/D FDB1D7N10CL7 THERMAL CHARACTERISTICS Symbol Ratings Unit RqJC Thermal Resistance, Junction to Case (Note 1) Parameter 0.6 _C/W RqJA Thermal Resistance, Junction to Ambient (Note 1a) 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit 100 − − V OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C − 57 − mV/_C IDSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V − − 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA 2.0 3.1 4.0 V BVDSS DBVDSS/DTJ ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 700 μA VGS(th)/DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 700 μA, referenced to 25°C − −9 − mV/_C Static Drain to Source On Resistance VGS = 10 V, ID = 100 A − 1.5 1.75 mW VGS = 12 V, ID = 100 A − 1.4 1.7 VGS = 15 V, ID = 100 A − 1.33 1.65 VGS = 6 V, ID = 63 A − 2.2 4.4 VGS = 10 V, ID = 100 A, TJ= 150°C − 2.65 3.1 VDS = 5 V, ID = 100 A − 237 − S VDS = 50 V, VGS = 0 V, f = 1 MHz − 8285 11600 pF RDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 5025 7035 pF Crss Reverse Transfer Capacitance − 50 80 pF 0.1 0.8 1.6 Ω − 39 63 ns − 33 53 ns Turn−Off Delay Time − 85 136 ns Fall Time − 36 58 ns − 116 163 nC Rg Gate Resistance SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Rise Time VDD = 50 V, ID = 100 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 6 V Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Qoss Output Charge VDD = 50 V, ID = 100 A − 74 104 nC − 37 − nC − 24 − nC − 333 − nC Continuous Drain to Source Diode Forward Current − − 268 A ISM Pulsed Drain to Source Diode Forward Current − − 1390 A VSD Source to Drain Diode Forward Voltage − 0.9 1.2 V VDD = 50 V, VGS = 0 V SOURCE-DRAIN DIODE CHARACTERISTICS IS VGS = 0 V, IS = 100 A (Note 2) www.onsemi.com 2 FDB1D7N10CL7 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit − 63 101 ns − 186 298 nC SOURCE-DRAIN DIODE CHARACTERISTICS trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50 A, di/dt = 300 A/μs IF = 50 A, di/dt = 1000 A/μs − 82 132 ns − 869 1390 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper. b) 62.5°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 595 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 63 A, VDD = 90 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 91 A. 4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDB1D7N10CL7 FDB1D7N10CL7 D2−PAK−7L 330 mm 24 mm 800 Units www.onsemi.com 3 FDB1D7N10CL7 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 9 320 VGS = 10 V VGS = 6.5 V 240 VGS = 6 V 200 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 160 120 VGS = 5.5 V 80 40 0 VGS = 5 V 6 VGS = 5.5 V 5 4 VGS = 6 V 3 2 1 VGS = 5 V 0 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 7 Normalized Drain to Source ON−Resistance ID, Drain Current (A) 280 8 1 2 3 4 0 5 40 80 VDS, Drain-Source Voltage (V) 10 Normalized Drain to Source ON−Resistance 1.8 1.6 1.4 1.2 1.0 0.6 −75 −50 −25 0 25 50 75 100 125 4 TJ = 150 oC TJ = 25 oC 3 6 IS, Reverse Drain Current (A) 80 TJ = −55 oC 40 4 15 Figure 4. On−Resistance vs. Gate to Source Voltage TJ = 25 oC 120 3 12 320 TJ = 175 oC 2 9 VGS, Gate to Source Voltage (V) 200 160 320 2 150 175 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX VDS = 5 V 240 280 6 0 Figure 3. Normalized On−Resistance vs. Junction Temperature 280 240 ID = 100 A TJ, Junction Temperature (5C) 320 200 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 8 RDS(on), Drain to Source ON−Resistance (mW) ID = 100 A VGS = 10 V 0.8 ID, Drain Current (A) 160 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 2.2 0 120 ID, Drain Current (A) Figure 1. On-Region Characteristics 2.0 VGS = 10 V VGS = 6.5 V 0 5 6 100 10 TJ = 175 oC 1 TJ = 25 oC 0.1 TJ = −55oC 0.01 0.001 0.0 7 VGS = 0 V VGS, Gate to Source Voltage (V) 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 FDB1D7N10CL7 TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) 100000 10 VDD = 50 V VDD = 25 V 6 VDD = 75 V 4 Coss 1000 100 Crss 10 2 0 Ciss 10000 8 Capacitance (pF) VGS, Gate to Source Voltage ID = 100 A f = 1 MHz VGS = 0 V 0 30 60 90 1 0.1 120 1 10 100 VDS, Drain to Source Voltage (V) Qg, Gate Characteristics Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 200 300 250 ID, Drain Current (A) IAS, Avalanche Current (A) o RqJC = 0.6 C/W 100 TJ = 25 oC 10 TJ = 150 oC 1 0.001 0.01 0.1 1 VGS = 10 V 200 150 VGS = 6 V 100 50 10 100 0 25 1000 50 75 tAV, Time in Avalanche (ms) P(PK), Peak Transient Power (W) 100000 ID, Drain Current (A) 1 ms 1000 5 ms 10 m s 100 0.1 0.1 THIS AREA IS LIMITED BY rDS(on) 100 m s SINGLE PULSE TJ = MAX RATED 1 ms RqJC = 0.6 oC/W TC = 25 oC 1 10 ms CURVE BENT TO MEASURED DATA 10 150 175 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 20000 10000 1 125 TC, Case Temperature (5C) Figure 9. Unclamped Inductive Switching Capability 10 100 100 ms 100 TC = 25 oC 10000 1000 100 −5 10 400 SINGLE PULSE RqJC = 0.6 oC/W VDS, Drain to Source Voltage [V] −4 10 −3 10 −2 10 −1 10 1 t, Pulse Width (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDB1D7N10CL7 TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) r(t), Normalized Transient Thermal Resistance 2 1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PPDM DM t1t1 t2t2 0.01 0.001 Notes: NOTES: ZqJCZ(t) =(t)r(t) × RxqJC = r(t) RqJC qJC o RqJCR= 0.6°C/W qJC = 0.6 C/W PDM ZqJC PeakPeak TJ =TJP=DM × ZxqJC (t)(t)++TTCC Cycle, DutyDuty Cycle, D =Dt1= /t1t2/ t2 SINGLE PULSE 10−5 10−4 10−3 10−2 10−1 100 t, Rectangular Pulse Duration (s) Figure 13. Normalized Max Junction to Case Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK7 (TO−263 7 LD) CASE 418AY ISSUE C DATE 15 JUL 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13798G D2PAK7 (TO−263 7 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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