FDC5612

FDC5612 FDC5612 60V N-Channel PowerTrench® MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • 4.3 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V RDS(ON) = 0.064 Ω @ VGS = 6 V • Low gate charge (12.5nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D 1 6 2 5 3 4 D G D SuperSOTTM -6 D Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous 4.3 A Drain Current - Pulsed PD Power Dissipation for Single Operation TJ, Tstg (Note 1a) 20 (Note 1a) 1.6 (Note 1b) 0.8 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 78 Thermal Resistance, Junction-to-Case (Note 1) 30 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .562 FDC5612 7’’ 8mm 3000 units © 2004 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDC5612/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA 4 V On Characteristics 60 V 1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA, Referenced to 25°C -5.5 0.042 0.072 0.048 ∆TJ RDS(on) mV/°C 58 2 2.2 mV/°C 0.055 0.094 0.064 Ω ID(on) On-State Drain Current VGS = 10 V, ID = 4.3 A VGS = 10 V, ID = 4.3 A, TJ = 125°C VGS = 6 V, ID = 4 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 4.3 A 14 VDS = 25 V, VGS = 0 V, f = 1.0 MHz 650 pF 80 pF 35 pF 10 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) (Note 2) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 11 20 8 18 ns Turn-Off Delay Time 19 35 ns tf Turn-Off Fall Time 6 15 ns Qg Total Gate Charge 12.5 18 Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 4.3 A, VGS = 10 V ns nC 2.4 nC 2.6 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.75 1.3 A 1.2 V Notes: 1. RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 78°C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% www.onsemi.com 2 FDC5612 Electrical Characteristics FDC5612 Typical Characteristics 1 .8 VGS = 10V 4.5V R DS(O N), N OR M A LIZ ED 6.0V 16 5.0V 4.0V 12 8 3.5V 4 0 D R AIN -SO U RC E O N -R ES ISTA NC ID, DRAIN-SOURCE CURRENT (A) 20 1 .6 V G S = 4 .0 V 1 .4 4 .5 V 5 .0 V 1 .2 6 .0 V 8 .0 V 0 .8 0 1 2 3 4 0 4 Figure 1. On-Region Characteristics. 12 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 2 ID = 2.2A ID = 4.3A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 I D , D RA IN C U RR EN T (A ) VDS, DRAIN-SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.12 0.1 o TA = 125 C 0.08 0.06 0.04 o TA = 25 C 0.02 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 TA = -55 C o IS, REVERSE DRAIN CURRENT (A) o VDS = 5V ID, DRAIN CURRENT (A) 1 0V 1 25 C o 16 125 C 12 8 4 VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 1 2 3 4 5 6 0 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.2 FDC5612 Typical Characteristics 900 VDS = 10V ID = 4.3A 20V CISS 700 30V 6 4 600 500 400 300 200 2 COSS 100 0 CRSS 0 0 2 4 6 8 10 12 14 0 10 Qg, GATE CHARGE (nC) 20 30 50 60 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 RDS(ON) LIMIT 100µs 10 1ms 10ms 100ms 1 1s 10s DC VGS = 10V SINGLE PULSE o RθJA = 156 C/W 0.1 o TA = 25 C 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V 800 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 156 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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