FDC5612_F095

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) VDSS RDS(ON) MAX ID MAX 60 V   @ 10 V 4.3 A 60 V   @ 6 V FDC5612 D General Description D S DD This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. G TSOT23 6−Lead (SUPERSOTt−6) CASE 419BL MARKING DIAGRAM 562 MG G Features • 4.3 A, 60 V. • • • • • RDS(ON) = 0.055  @ VGS = 10 V RDS(ON) = 0.064  @ VGS = 6 V Low Gate Charge (12.5 nC Typical) Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(ON). SUPERSOTTM−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1mm Thick). This is a Pb−Free and Halide Free Device 562 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage 60 V VGSS V Gate−Source Voltage ±20 ID Drain Current −Continuous (Note 1a) −Pulsed 4.3 20 PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, Tstg Operating and Storage Junction Temperature Range A W 1.6 0.8 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 6 2 5 3 4 ORDERING INFORMATION Device FDC5612 −55 to +150 1 Package Shipping† TSOT−23−6 (SUPERSOTt−6) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJA Thermal Resistance, Junction−to−Ambient (Note 1a) 78 °C/W RJC Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W © Semiconductor Components Industries, LLC, 2004 June, 2022 − Rev. 4 1 Publication Order Number: FDC5612/D FDC5612 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 − − V BV DSS T J Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25°C − 58 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V − − 1 A IGSSF Gate–Body Leakage Current, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage Current, Reverse VGS = −20 V, VDS = 0 V − − −100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2 2.2 4 V V GS(th) Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25°C − −5.5 − mV/°C Static Drain–Source On–Resistance VGS = 10 V, ID = 4.3 A VGS = 10 V, ID = 4.3 A, TJ = 125°C VGS = 6 V, ID = 4 A − − − 0.042 0.072 0.048 0.055 0.094 0.064  On–State Drain Current VGS = 10 V, VDS = 5 V 10 − − A Forward Transconductance VDS = 10 V, ID = 4.3 A − 14 − S VDS = 25 V, VGS = 0 V, f = 1.0 MHz − 650 − pF T J RDS(on) ID(on) gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 80 − pF Crss Reverse Transfer Capacitance − 35 − pF − 11 20 ns − 8 18 ns SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6  Turn–Off Delay Time − 19 35 ns tf Turn–Off Fall Time − 6 15 ns − 12.5 18 nC − 2.4 − nC − 2.6 − nC Maximum Continuous Drain–Source Diode Forward Current − − 1.3 A Drain–Source Diode Forward Voltage − 0.75 1.2 V Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 30 V, ID = 4.3 A, VGS = 10 V DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD VGS = 0 V, IS = 1.3 A (Note 2) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RJA is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user’s board design. a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper. b) 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. www.onsemi.com 2 FDC5612 4.5 V 6.0 V 16 4.0 V 5.0 V 12 8 3.5 V 4 0 RDS(ON), Normalized Drain−Source On−Resistance VGS = 10 V 2 1 0 1.8 1.6 VGS = 4.0 V 1.4 4.5 V 6.0 V 8.0 V 10 V 1 0 12 16 Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 0.14 1.8 1.6 1.4 1.2 1 0.8 0.6 0 −25 25 50 75 100 125 0.1 TA = 125°C 0.08 0.06 0.04 TA = 25°C 0.02 0 150 ID = 2.2 A 0.12 2 4 Figure 3. On−Resistance Variation with Temperature TA = −55°C 100 25°C 125°C 16 12 8 4 1 2 3 4 8 10 Figure 4. On−Resistance Variation with Gate−to−Source Voltage IS, Reverse Drain Current (A) VDS = 5 V 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (5C) 20 20 ID, Drain Current (A) ID = 4.3 A VGS = 10 V 0.4 −50 ID, Drain Current (A) 8 4 VDS, Drain−Source Voltage (V) 2 0 5.0 V 1.2 0.8 4 3 RDS(ON), On−Resistance (W) ID, Drain−Source Current (A) 20 RDS(ON), Normalized Drain−Source On−Resistance TYPICAL CHARACTERISTICS 5 10 TA = 125°C 1 25°C 0.1 0.01 −55°C 0.001 0.0001 6 VGS = 0 V 0 VGS, Gate to Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDC5612 TYPICAL ELECTRICAL CHARACTERISTICS (continued) ID = 4.3 A VDS = 10 V 8 900 30 V 6 f = 1 MHz VGS = 0 V 800 20 V Capacitance (pF) VGS, Gate Source Voltage (V) 10 4 CISS 700 600 500 400 300 200 2 COSS 100 0 100 4 2 6 10 12 14 20 10 30 60 10 100 s 1 ms 10 ms 100 ms 1s 10 s 1 P(pk), VGS = 10 V Single Pulse RJA = 156°C/W TA = 25°C 100 10 Single Pulse RJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 0.1 1 10 100 1000 t1, Time (s) VDS, Drain−Source Voltage (V) Figure 9. Maximum Safe Operating Area r(t), Normalized Effective Transient Thermal Resistance 50 Figure 8. Capacitance Characteristics DC 1 40 Figure 7. Gate Charge Characteristics 1 0.01 0.1 0 VDS, Drain to Source Voltage (V) RDS(ON) Limit 0.1 CRSS Qg, Gate Charge (nC) 10 ID, Drain Current (A) 8 0 Peak Transient Power (W) 0 Figure 10. Single Pulse Maximum Power Dissipation D = 0.5 0.2 0.1 0.1 RJA (t) = r(t) RJA RJA = 156°C/W 0.05 0.02 P(pk) 0.01 0.01 0.001 0.0001 t1 Single Pulse t2 TJ − TA = P RJA(t) Duty Cycle, D = t1/t2 0.001 0.01 0.1 1 10 t1, Time (s) Figure 11. Transient Thermal Response Curve NOTE: Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 FDC5612 POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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