FDC602P_F095

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –5.5 A, –20 V RDS(ON) = 35 mΩ @ V GS = –4.5 V RDS(ON) = 50 mΩ @ V GS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • Battery management • Load switch • Battery protection D D TM S SuperSOT -6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage V ID Drain Current ±12 –5.5 – Continuous (Note 1a) – Pulsed PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ , TSTG A –20 1.6 W 0.8 –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .602 FDC602P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC602P Rev C(W) FDC602P April 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –14 mV/°C Off Characteristics BV DSS Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA ∆BV DSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C V DS = –16 V, V GS = 0 V –1 IGSSF Gate–Body Leakage, Forward V GS = 12 V, V DS = 0 V 100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = –12 V, V DS = 0 V –100 nA On Characteristics –20 V (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS , ID = –250 µA ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 3 27 38 38 ID(on) On–State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = –5 V, ID = –5.5 A 19 S V DS = –10 V, f = 1.0 MHz V GS = 0 V, 1456 pF 300 pF 150 pF –0.6 = –4.5 V, ID = –5.5 A = –2.5 V, ID = –4.5 A = –4.5 V, ID = –5.5ATJ =125°C = –4.5 V, V DS = –5 V –0.9 –1.5 V mV/°C 35 50 53 –20 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –10 V, V GS = –4.5 V, 15 27 ns 11 20 ns Turn–Off Delay Time 57 91 ns tf Turn–Off Fall Time 37 59 ns Qg Total Gate Charge 14 20 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –10 V, V GS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –5.5 A, 3 nC 5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current V SD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.3 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC602P Rev C(W) FDC602P Electrical Characteristics FDC602P Typical Characteristics 20 2 V GS =-4.5V -I D, DRAIN CURRENT (A) 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -3.5V -2.5V 12 8 -2.0V 4 1.8 1.6 V GS = -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1 0 0 0.5 1 1.5 2 2.5 0.8 3 0 -V DS, DRAIN TO SOURCE VOLTAGE (V) 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.12 ID = -3.0A RDS(ON), ON-RESISTANCE (OHM) ID = -5.5A VGS = -4.5V 1.4 1.2 1 0.8 0.6 0.1 0.08 TA = 125o C 0.06 0.04 TA = 25 oC 0.02 0 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 T J, JUNCTION TEMPERATURE ( oC) 3 3.5 4 4.5 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 TA = -55o C 25o C -I S, REVERSE DRAIN CURRENT (A) V DS = -5.0V 16 -ID , DRAIN CURRENT (A) 10 -ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 125o C 12 8 4 0 V GS =-4.5V 10 TA = 125 oC 1 0.1 25o C 0.01 -55 o C 0.001 0.0001 0.5 1 1.5 2 2.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC602P Rev C(W) FDC602P Typical Characteristics 2000 V DS =-5.0V ID = -5.5A 4 1600 -15V 3 2 1200 800 COSS 1 400 0 0 CRSS 0 3 6 9 12 15 18 0 5 Q g, GATE CHARGE (nC) 10 15 20 -V D S, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 100µs 1ms 10ms 10 100ms 1s 1 10s DC VGS = -4.5V SINGLE PULSE Rθ JA = 156 oC/W 0.1 T A = 25o C 0.01 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT SINGLE PULSE Rθ J A TA 40 30 20 10 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) f = 1 MHz V GS = 0 V CISS -10V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJ A(t) = r(t) + RθJ A 0.2 0.1 RθJ A = 156 oC/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - T A = P * R θJ A (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC602P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET  VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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