FDD3672-F085

FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Features Applications „ Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A „ DC/DC converters and Off-Line UPS „ Typ Qg(10) = 24nC at VGS = 10V „ Distributed Power Architectures and VRMs „ Low Miller Charge „ Primary Switch for 24V and 48V Systems „ Low Qrr Body Diode „ High Voltage Synchronous Rectifier „ Optimized efficiency at high frequencies „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant FDD3672_F085 Rev. C 1 www.fairchildsemi.com FDD3672_F085 N-Channel UltraFET Trench MOSFET March 2011 Symbol Drain to Source Voltage VDSS VGS ID EAS PD Parameter Ratings 100 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 30oC, VGS = 10V) 44 Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 1) 73 mJ Power Dissipation 144 W Derate above 25oC 0.96 W/oC TJ, TSTG Operating and Storage Temperature o -55 to +175 C Thermal Characteristics RθJC Maximum Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 1.04 o C/W 52 o C/W Package Marking and Ordering Information Device Marking FDD3672 Device FDD3672_F085 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 100 - - V VDS = 80V, VGS = 0V - - 1 - - 250 μA VGS = ±20V - - ±100 VGS = VDS, ID = 250μA 2 3 4 V ID = 44A, VGS= 10V - 0.024 0.028 Ω TJ = 150oC nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance ID = 21A, VGS= 6V, - 0.028 0.047 Ω ID = 44A, VGS= 10V, TJ = 175°C - 0.063 0.074 Ω VDS = 25V, VGS = 0V, f = 1MHz - 1635 - pF - 240 - pF - 60 - pF - 24 36 nC - 3 4.5 nC - 8.3 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V VGS = 0 to 2V Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge FDD3672_F085 Rev. C 2 VDD = 50V ID = 44A Ig = 1.0mA - 5.3 - nC - 5.8 - nC www.fairchildsemi.com FDD3672_F085 N-Channel UltraFET Trench MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 78 ns td(on) Turn-On Delay Time - 12 - ns tr Turn-On Rise Time - 37 - ns td(off) Turn-Off Delay Time - 24 - ns tf Turn-Off Fall Time - 44 - ns toff Turn-Off Time - - 70 ns ISD = 44A - 0.9 1.25 V ISD = 21A - 0.8 1.0 V - 44 57 ns - 58 76 nC VDD = 50V, ID = 44A, VGS = 10V, RGS = 11Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 44A, dISD/dt = 100A/μs Notes: 1: Starting TJ = 25oC, L = 0.2mH, IAS = 27A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD3672_F085 Rev. C 3 www.fairchildsemi.com FDD3672_F085 N-Channel UltraFET Trench MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted 50 CURRENT LIMITED VGS = 10V BY PACKAGE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 40 30 20 10 0 175 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = 10V TC = 25oC FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD3672_F085 Rev. C 4 www.fairchildsemi.com FDD3672_F085 N-Channel UltraFET Trench MOSFET Typical Characteristics 100 200 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 10 SINGLE PULSE TJ = MAX RATED TC = 25oC 1 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms DC 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 0.1 1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 300 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 80 80 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 60 40 TJ = 25oC 20 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 10V 60 VGS = 8V VGS = 7V VGS = 6V VGS = 5V 40 20 TJ = 175oC TJ = -55oC 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, GATE TO SOURCE VOLTAGE (V) 0 6.5 Figure 7. Transfer Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 TJ = 175oC 60 40 TJ = 25oC 20 0 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD3672_F085 Rev. C 5 Figure 8. Saturation Characteristics 100 ID = 44A 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 ID = 44A VGS = 10V 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD3672_F085 N-Channel UltraFET Trench MOSFET Typical Characteristics 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 VGS = VDS ID = 250μA 1.2 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 CAPACITANCE (pF) 10000 Ciss 1000 Coss 100 f = 1MHz VGS = 0V 10 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.00 0.95 0.90 0.85 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 10 ID = 44A VDD = 50V 8 VDD = 40V VDD = 60V 6 4 2 0 0 80 Figure 13. Capacitance vs Drain to Source Voltage FDD3672_F085 Rev. C 1.05 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature ID = 5mA 1.10 5 10 15 Qg, GATE CHARGE(nC) 20 25 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD3672_F085 N-Channel UltraFET Trench MOSFET Typical Characteristics