Is Now Part of
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FDG6332C
20V N & P-Channel PowerTrench MOSFETs
General Description
Features
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
• Q1
0.7 A, 20V.
RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Q2
–0.6 A, –20V.
RDS(ON) = 420 mΩ @ VGS = –4.5 V
RDS(ON) = 630 mΩ @ VGS = –2.5 V
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
Applications
• SC70-6 package: small footprint (51% smaller than
• DC/DC converter
• Load switch
• LCD display inverter
SSOT-6); low profile (1mm thick)
S
G
D
D
1
6
2
5
3
4
G
Pin 1
S
SC70-6
Complementary
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Q1
Q2
VDSS
Drain-Source Voltage
Parameter
20
–20
V
VGSS
Gate-Source Voltage
±12
±12
V
ID
Drain Current
0.7
–0.6
A
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
– Continuous
(Note 1)
– Pulsed
2.1
(Note 1)
Units
–2
0.3
W
–55 to +150
°C
415
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.32
FDG6332C
7’’
8mm
3000 units
2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)
FDG6332C
September 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF /IGSSR Gate–Body Leakage, Forward
IGSSF /IGSSR Gate–Body Leakage, Reverse
On Characteristics
ID = 250 µA
VGS = 0 V,
VGS = 0 V,
ID = –250 µA
ID = 250 µA,Ref. to 25°C
ID = –250 µA,Ref. to 25°C
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VGS = ± 12V , VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
V
14
–14
mV/°C
1
–1
±100
±100
µA
V
(Note 2)
Gate Threshold Voltage
Q1
VDS = VGS, ID = 250 µA
0.6
1.1
1.5
VDS = VGS, ID = –250 µA
-0.6
–1.5
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
Q2
Q1
Q2
RDS(on)
Static Drain–Source
On–Resistance
VGS(th)
gFS
ID(on)
nA
nA
Q2
VGS = –4.5 V, ID = –0.6 A
VGS = –2.5 V, ID = –0.5 A
VGS=–4.5 V, ID =–0.6 A,TJ=125°C
–1.2
–2.8
3
180
293
247
300
470
400
Q1
VDS = 5 V
ID = 0.7 A
2.8
Q2
VDS = –5 V
ID = –0.6A
1.8
Q1
VGS = 4.5 V,
VDS = 5 V
Q2
VGS = –4.5 V, VDS = –5 V
Q1
Forward Transconductance
On–State Drain Current
ID = 250 µA,Ref. To 25°C
ID = –250 µA,Ref. to 25°C
VGS = 4.5 V, ID =0.7 A
VGS = 2.5 V, ID =0.6 A
VGS = 4.5 V, ID =0.7A,TJ=125°C
mV/°C
300
400
442
mΩ
420
630
700
S
A
1
–2
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS=10 V, V GS= 0 V, f=1.0MHz
113
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
114
Q1
VDS=10 V, V GS= 0 V, f=1.0MHz
34
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
24
VDS=10 V, V GS= 0 V, f=1.0MHz
16
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
9
Q1
For Q1:
VDS =10 V,
VGS= 4.5 V,
Reverse Transfer Capacitance Q1
Switching Characteristics
td(on)
Q1
Turn–On Delay Time
td(off)
Turn–On Rise Time
Q1
Turn–Off Delay Time
Q2
Q1
Q2
tf
Qg
Qgs
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
pF
I D= 1 A
RGEN = 6 Ω
For Q2:
VDS =–10 V, I D= –1 A
VGS= –4.5 V, RGEN = 6 Ω
5
10
5.5
11
7
14
15
25
ns
9
18
ns
6
12
ns
Q1
1.5
3
ns
Q2
1.7
1.1
3.4
1.5
nC
1.4
2
Q1
Q2
Q1
Q2
Qgd
pF
(Note 2)
Q2
tr
pF
Q1
Q2
For Q1:
VDS =10 V,
VGS= 4.5 V,
For Q2:
VDS =–10 V,
VGS= –4.5 V,
I D= 0.7 A
RGEN = 6 Ω
I D= –0.6 A
RGEN = 6 Ω
0.24
nC
0.3
0.3
0.4
nC
FDG6332C Rev C2 (W)
FDG6332C
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Q1
0.25
Q2
–0.25
Q1
VGS = 0 V, IS = 0.25 A
(Note 2)
0.74
1.2
Q2
VGS = 0 V, IS = –0.25 A
(Note 2)
–0.77
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4
PCB in a still air environment.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG6332C Rev C2 (W)
FDG6332C
Electrical Characteristics
FDG6332C
Typical Characteristics: N-Channel
1.8
4
3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS=4.5V
3.5V
2.5V
3
2
2.0V
1
1.6
VGS = 2.5V
1.4
3.0V
1.2
3.5V
4.0V
0.8
0
0
1
2
3
0
4
1
Figure 1. On-Region Characteristics.
3
4
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
1.6
ID =0.7A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
I D, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
ID =0.4A
0.6
TA = 125oC
0.4
TA = 25oC
0.2
0
0.6
-50
-25
0
25
50
75
100
125
1
150
2
3
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
2.5
2
VGS = 0V
25oC
IS, REVERSE DRAIN CURRENT (A)
o
TA = -55 C
VDS = 5V
I D, DRAIN CURRENT (A)
4.5V
1
125oC
1.5
1
0.5
1
TA = 125oC
25 oC
0.1
o
-55 C
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6332C Rev C2 (W)
FDG6332C
Typical Characteristics: N-Channel
200
VDS = 5V
ID = 0.7A
f = 1MHz
VGS = 0 V
10V
4
15V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
3
2
150
CISS
100
COSS
50
1
CRSS
0
0
0
0.4
0.8
1.2
0
1.6
Figure 7. Gate Charge Characteristics.
10
15
20
Figure 8. Capacitance Characteristics.
10
10
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg , GATE CHARGE (nC)
100µs
1ms
1
10ms
100ms
1s
VGS = 4.5V
SINGLE PULSE
RθJA = 415oC/W
0.1
DC
TA = 25oC
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
100
SINGLE PULSE
RθJA = 415°C/W
TA = 25°C
8
6
4
2
0
0.001
0.01
0.1
1
10
100
t 1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDG6332C Rev C2 (W)
FDG6332C
Typical Characteristics: P-Channel
2
1.8
VGS = -4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-3.0V
-ID, DRAIN CURRENT (A)
-3.5V
1.6
-2.5V
1.2
0.8
-2.0V
0.4
VGS = -2.5V
1.6
1.4
-3.0V
1.2
-3.5V
-4.0V
-4.5V
1
0.8
0
0
1
2
3
0
4
0.5
Figure 11. On-Region Characteristics.
2
1.2
ID = -0.6A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.5
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1.1
1
0.9
0.8
ID = -0.3 A
1
0.8
TA = 125oC
0.6
TA = 25o C
0.4
0.2
0.7
-50
-25
0
25
50
75
100
125
1
150
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
10
2
TA = -55 oC
VGS = 0V
25oC
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
o
-ID, DRAIN CURRENT (A)
1
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
125 C
1.5
1
0.5
1
o
TA = 125 C
0.1
o
25 C
0.01
-55oC
0.001
0.0001
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6332C Rev C2 (W)
FDG6332C
Typical Characteristics: P-Channel
160
ID = -0.6A
VDS = -5V
f = 1MHz
VGS = 0 V
-10V
4
-15V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
3
2
120
CISS
80
COSS
40
1
CRSS
0
0
0
0.3
0.6
0.9
1.2
1.5
0
1.8
5
Figure 17. Gate Charge Characteristics.
15
20
Figure 18. Capacitance Characteristics.
10
10
100µs
RDS(ON) LIMIT
10ms
100ms
1s
VGS = -4.5V
SINGLE PULSE
RθJA = 415 oC/W
DC
6
4
2
TA = 25oC
0.01
0.1
o
TA = 25 C
1ms
1
0.1
SINGLE PULSE
o
RθJA = 415 C/W
8
POWER (W)
-ID, DRAIN CURRENT (A)
10
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
0
0.001
100
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 415 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDG6332C Rev C2 (W)
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS
FRFET®
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT
OPTOLOGIC®
AccuPower
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FastvCore
FETBench
FPS
OPTOPLANAR®
®
Power Supply WebDesigner
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
STEALTH
SuperFET®
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT®*
μSerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
Xsens™
仙童™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
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Advance Information
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I76
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