FDG6332C_F085

FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs March 2009 FDG6332C_F085 20V N & P-Channel PowerTrench® MOSFETs Features • Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick) • Qualified to AEC Q101 • RoHS Compliant General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. Applications • DC/DC converter • Load switch • LCD display inverter S G D D Pin 1 1 2 3 Complementary 6 5 4 G S SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Q1 20 ±12 (Note 1) Q2 –20 ±12 –0.6 –2 0.3 –55 to +150 Units V V A W °C 0.7 2.1 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking .32 Device FDG6332C_F085 Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Electrical Characteristics Symbol Parameter Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current TA = 25°C unless otherwise noted Test Conditions ID = 250 µA VGS = 0 V, VGS = 0 V, ID = –250 µ A ID = 250 µ A,Ref. to 25°C ID = –250 µA,Ref. to 25°C VDS = 16 V, VGS = 0 V VDS = –16 V, VGS = 0 V VGS = ± 12 V, VDS = 0 V VGS = ± 12V , VDS = 0 V VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µ A ID = 250 µ A,Ref. To 25°C ID = –250 µA,Ref. to 25°C VGS = 4.5 V, ID =0.7 A VGS = 2.5 V, ID =0.6 A VGS = 4.5 V, ID =0.7A,TJ=125°C VGS = –4.5 V, ID = –0.6 A VGS = –2.5 V, ID = –0.5 A VGS=–4.5 V, ID =–0.6 A,TJ=125°C VDS = 5 V VDS = –5 V VGS = 4.5 V, ID = 0.7 A ID = –0.6A VDS = 5 V Q1 Q2 Q1 Q2 Q1 Q2 Min 20 –20 Typ Max Units V 14 –14 1 –1 ±100 ±100 mV/°C µA nA nA IGSSF /IGSSR Gate–Body Leakage, Forward IGSSF /IGSSR Gate–Body Leakage, Reverse On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Q1 Q2 Q1 Q2 Q1 0.6 -0.6 1.1 –1.2 –2.8 3 180 293 247 300 470 400 2.8 1.8 1.5 –1.5 V mV/°C 300 400 442 420 630 700 mΩ Q2 gFS ID(on) Forward Transconductance On–State Drain Current Q1 Q2 Q1 Q2 S A 1 –2 VGS = –4.5 V, VDS = –5 V Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 VDS=10 V, V GS= 0 V, f=1.0MHz VDS=–10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=–10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=–10 V, V GS= 0 V, f=1.0MHz 113 114 34 24 16 9 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 For Q1: VDS =10 V, VGS= 4.5 V, 5 I D= 1 A RGEN = 6 Ω 5.5 7 14 9 6 1.5 1.7 1.1 I D= 0.7 A RGEN = 6 Ω I D= –0.6 A RGEN = 6 Ω 1.4 0.24 0.3 0.3 0.4 10 11 15 25 18 12 3 3.4 1.5 2 ns ns ns ns nC nC nC For Q2: VDS =–10 V, I D= –1 A VGS= –4.5 V, RGEN = 6 Ω For Q1: VDS =10 V, VGS= 4.5 V, For Q2: VDS =–10 V, VGS= –4.5 V, FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Electrical Characteristics Symbol IS VSD TA = 25°C unless otherwise noted Parameter Test Conditions Q1 Q2 (Note 2) (Note 2) Min Typ Max Units 0.25 –0.25 A V Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Q1 Q2 VGS = 0 V, IS = 0.25 A VGS = 0 V, IS = –0.25 A 0.74 –0.77 1.2 –1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4 PCB in a still air environment. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: N-Channel 4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=4.5V ID, DRAIN CURRENT (A) 3.5V 3 2.5V 3.0V 1.8 1.6 VGS = 2.5V 1.4 3.0V 3.5V 4.0V 1 4.5V 2 1.2 2.0V 1 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 1 2 I D, DRAIN CURRENT (A) 3 4 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID =0.7A VGS = 4.5V 1.4 ID =0.4A 0.6 1.2 TA = 125oC 0.4 1 TA = 25 C 0.2 o 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 2.5 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V I D, DRAIN CURRENT (A) 2 TA = -55 C 25oC 125oC 1 TA = 125oC 25 oC -55oC 1.5 0.1 1 0.01 0.5 0.001 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: N-Channel 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 0.7A 4 CAPACITANCE (pF) 15V 3 VDS = 5V 10V 200 f = 1MHz VGS = 0 V 150 CISS 100 2 COSS 50 1 CRSS 0 0 0.4 0.8 Qg , GATE CHARGE (nC) 1.2 1.6 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 8 SINGLE PULSE RθJA = 415°C/W TA = 25°C 1 6 0.1 VGS = 4.5V SINGLE PULSE RθJA = 415oC/W TA = 25oC DC 4 2 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: P-Channel 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -ID, DRAIN CURRENT (A) 1.6 1.8 -3.0V -2.5V VGS = -2.5V 1.6 1.2 1.4 -3.0V 0.8 -2.0V 0.4 1.2 -3.5V -4.0V -4.5V 1 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 0.5 1 -ID, DRAIN CURRENT (A) 1.5 2 Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.2 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) ID = -0.6A VGS = -4.5V ID = -0.3 A 1 0.8 TA = 125 C 0.6 TA = 25o C 0.4 o 0.2 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 2 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 1.5 TA = -55 oC 25oC 125 C o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125 C 0.1 25 C 0.01 -55oC o o 1 0.5 0.001 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: P-Channel 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.6A 4 CAPACITANCE (pF) 160 VDS = -5V -10V -15V 120 CISS f = 1MHz VGS = 0 V 3 80 COSS 40 2 1 CRSS 0 0 0.3 0.6 0.9 1.2 1.5 1.8 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 10 Figure 18. Capacitance Characteristics. 10 SINGLE PULSE o RθJA = 415 C/W TA = 25 C o -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100µs 1ms 8 1 10ms 100ms 1s POWER (W) 100 6 0.1 VGS = -4.5V SINGLE PULSE RθJA = 415 oC/W TA = 25oC DC 4 2 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 415 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. 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