FDG6301N_F085

Dual N-Channel, Digital FET FDG6301N-F085 Features • • • • • • • • 25 V, 0.22 A Continuous, 0.65 A Peak RDS(ON) = 4 Ω @ VGS = 4.5 V, RDS(ON) = 5 Ω @ VGS = 2.7 V. Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) < 1.5 V) Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body Model) Compact Industry Standard SC70−6 Surface Mount Package. AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com Applications SC−88 (SC−70 6 Lead), 1.25x2 CASE 419AD • Low Voltage Applications as a Replacement for Bipolar Digital Transistors and Small Signal MOSFETs MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain to Source Voltage 25 V VGS Gate to Source Voltage 8 V Drain Current Continuous 0.22 A Pulsed 0.65 Power Dissipation 0.3 ID PD W TJ, TSTG Operating and Storage Temperature −55 to 150 °C ESD Electrostatic Discharge Rating MIL−STD−883D Human Body Model (100 pF / 1500 W) 6.0 kV RqJA Thermal Resistance, Junction to Ambient 415 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the Solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. RθJA = 415 °C/W on minimum pad mounting on FR−4 board in still air. 2. A suffix as “...F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in August 2014. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% ORDERING INFORMATION Device Device Marking Package Shipping† FDG6301N−F085 FDG6301N SC−88 (SC−70 6 Lead) (Pb−Free, Halogen Free) 3,000 units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D © Semiconductor Components Industries, LLC, 2019 September, 2019 − Rev. 3 1 Publication Order Number: FDG6301N−F085/D FDG6301N−F085 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250 mA, VGS = 0 V 25 V 1 VDS = 20 V, VGS = 0 V TJ = 55°C Gate to Source Leakage Current IGSS mA 10 VGS = ±8 V ±100 nA 0.85 1.5 V W On Characteristics Gate to Source Threshold Voltage VGS(th) VGS = VDS, ID = 250 mA Drain to Source On Resistance rDS(on) ID = 0.22 A, VGS = 4.5 V 2.6 4 ID = 0.19 A, VGS = 2.7 V 3.7 5 ID = 0.22 A, VGS = 4.5 V, TJ = 125°C 5.3 7 On−State Drain Current 0.65 0.22 ID(on) VGS = 4.5 V, VDS = 5 V gFS ID = 0.22 A, VDS = 5 V 0.2 s Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 9.5 pF Output Capacitance Coss 6 pF Reverse Transfer Capacitance Crss 4.5 pF Forward Transconductance Dynamic Characteristics 0.4 nC 5 10 ns tr 4.5 10 ns td(off) 4 8 ns tf 3.2 7 ns 0.25 A 1.2 V Total Gate Charge at −4.5 V Qg(TOT) Gate to Source Gate Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 0 to 4.5 V; VDD = 5 V, ID = 0.22 A 0.29 VDD = 5 V, ID = 0.22 A 0.12 0.03 Switching Characteristics Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 W Drain−Source Diode Characteristics Maximum Continuous Source Current Source to Drain Diode Voltage IS VSD ISD = 0.25 A, VGS = 0 V 0.8 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FDG6301N−F085 TYPICAL CHARACTERISTICS Figure 2. On−Resistance Variation with Drain Current and Gate Voltage Figure 1. On−Region Characteristics Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance Variation with Gate−to−Source Voltage Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics www.onsemi.com 3 FDG6301N−F085 TYPICAL CHARACTERISTICS Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation Figure 11. Transient Thermal Response Curve www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88 (SC−70 6 Lead), 1.25x2 CASE 419AD ISSUE A DATE 07 JUL 2010 1 D e e E1 E SYMBOL MIN A 0.80 MAX 1.10 A1 0.00 0.10 A2 0.80 1.00 b 0.15 0.30 0.18 c 0.10 D 1.80 2.00 2.20 E 1.80 2.10 2.40 E1 1.15 1.25 1.35 0.65 BSC e L 0.26 L1 0.36 0.46 0.42 REF 0.15 BSC L2 TOP VIEW NOM θ 0º 8º θ1 4º 10º q1 A2 A q b q1 L L1 A1 SIDE VIEW c L2 END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-203. DOCUMENT NUMBER: DESCRIPTION: 98AON34266E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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