FDMC7696-L701

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) VDS rDS(on) MAX ID MAX 30 V 11.5 mW @ 10 V 12 A 14.5 mW @ 4.5 V 30 V, 12 A, 11.5 mW FDMC7696 Pin 1 87 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. 1 23 DD 4 Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR Max rDS(on) = 11.5 mW at VGS = 10 V, ID = 12 A Max rDS(on) = 14.5 mW at VGS = 4.5 V, ID = 10 A High Performance Technology for Extremely Low rDS(on) This Device is Pb−Free, Halide Free and RoHS Compliant MARKING DIAGRAM $Y&Z&2&K FDMC 7696 Applications • DC/DC Buck Converters • Notebook Battery Power Management • Load Switch in Notebook SG DD Top Features • • • • SS 65 $Y &Z &2 &K FDMC7696 = Logo = Assembly Plant Code = 2−Digit Date Code Format = 2−Digits Lot Run Traceability Code = Device Code PIN ASSIGNMENT D 5 4 G D 6 3 S D 7 2 S D 8 1 S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2011 September, 2022 − Rev. 3 1 Publication Order Number: FDMC7696/D FDMC7696 MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Ratings Unit VDS Drain to Source Voltage 30 V VDSt Drain to Source Transient Voltage (tTransient < 100 ns) 33 V VGS Gate to Source Voltage (Note 3) ±20 V A ID Parameter Drain Current Continuous (Package limited) TC = 25°C 20 Continuous (Silicon limited) TC = 25°C 38 Continuous (Note 1a) TA = 25°C 12 Pulsed EAS Single Pulse Avalanche Energy (Note 2) PD Power Dissipation Power Dissipation (Note 1a) TJ, TSTG 50 Operating and Storage Junction Temperature Range 21 mJ TC = 25°C 25 W TA = 25°C 2.4 −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit °C/W RqJC Thermal Resistance, Junction to Case 5.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 53 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper 2. EAS of 21 mJ is based on starting TJ = 25°C; L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 3. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 2 FDMC7696 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 30 − − V DBV DSS Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C − 14 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V − − 1 mA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V − − 100 nA 1.2 2.0 3.0 V DT J ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C − −6 − mV/°C Static Drain to Source On Resistance VGS = 10 V, ID = 12 A − 8.5 11.5 mW VGS = 4.5 V, ID = 10 A − 11.5 14.5 VGS = 10 V, ID = 12 A, TJ = 125°C − 11.6 15.7 VDS = 5 V, ID = 12 A − 45 − S VDS = 15 V, VGS = 0 V, f = 1 MHz DT J rDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance − 1075 1430 pF Coss Output Capacitance − 380 505 pF Crss Reverse Transfer Capacitance − 40 55 pF 0.2 1.0 2.0 W − 9 18 ns − 2 10 ns Turn−Off Delay Time − 19 33 ns Fall Time − 2 10 ns VGS = 0 V to 10 V, VDD = 15 V, ID = 12 A − 16 22 nC VGS = 0 V to 5 V, VDD = 15 V, ID = 12 A − 8 11 VDD = 15 V, ID = 12 A − 3.2 − nC − 1.8 − nC VGS = 0 V, IS = 1.9 A (Note 4) − 0.75 1.2 V VGS = 0 V, IS = 12 A (Note 4) − 0.84 1.2 IF = 12 A, di/dt = 100 A/ms − 25 40 ns − 9 18 nC Rg Gate Resistance SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn−On Delay Time Rise Time Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 12 A, VGS = 10 V, RGEN = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. www.onsemi.com 3 FDMC7696 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) ID, DRAIN CURRENT (A) VGS = 10 V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 50 VGS = 4 V 40 VGS = 6 V 30 VGS = 4.5 V 20 VGS = 3.5 V 10 0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0.0 0.5 1.0 1.5 2.5 2.0 6 VGS = 3.5 V 5 4 VGS = 4.0 V 3 VGS = 4.5 V 2 1 0 0 10 rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 40 1.2 1.0 0.8 −50 −25 0 25 50 75 100 25 20 15 TJ = 125°C 10 TJ = 25°C 5 0 125 150 2 4 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 TJ = 150°C 20 TJ = 25°C 10 TJ = −55°C 2 3 4 8 10 Figure 4. On−Resistance vs. Gate to Source Voltage PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 1 6 VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V 0 50 ID = 12 A 30 Figure 3. Normalized On−Resistance vs. Junction Temperature 40 40 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 35 TJ, JUNCTION TEMPERATURE (°C) 50 30 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = 12 A VGS = 10 V 0.6 −75 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.4 VGS = 10 V VGS = 6 V VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 5 100 VGS = 0 V 10 TJ = 150°C 1 TJ = 25°C 0.1 TJ = −55°C 0.01 0.001 VGS, GATE TO SOURCE VOLTAGE (V) 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 FDMC7696 10 3000 ID = 12 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) VDD = 10 V VDD = 15 V 6 VDD = 20 V 4 1000 Ciss Coss 100 2 0 f = 1 MHz VGS = 0 V 0 4 8 12 10 0.1 16 1 Qg, GATE CHARGE (nC) 30 Figure 8. Capacitance vs. Drain to Source Voltage 40 40 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics TJ = 25°C 10 TJ = 100°C TJ = 125°C 1 0.001 0.01 0.1 VGS = 4.5 V 20 Limited by Package 10 RqJC = 5.0°C/W 0 100 10 1 VGS = 10 V 30 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) Crss 100 ms 10 1 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 10 ms 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED RqJA = 125°C/W TA = 25°C 0.1 1 10 100 10 1 0.5 100 200 SINGLE PULSE RqJA = 125°C/W TA = 25°C 10 −4 10 −3 10 −2 10 −1 1 10 t, PULSE WIDTH (s) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 100 1000 FDMC7696 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 2 1 DUTY CYCLE−DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZqJA D = 0.5 0.1 0.01 0.001 −4 10 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x ZqJA(t) x RqJA + TA SINGLE PULSE RqJA = 125°C/W −3 10 −2 10 −1 10 1 10 t, RECTANGULAR PULSE DURATION (s) 100 1000 Figure 13. Junction−to−Ambient Transient Thermal Response Curve PACKAGE MARKING AND ORDERING INFORMATION Device FDMC7696 Device Marking Package Type Reel Size Tape Width Shipping† FDMC7696 WDFN8 3.3x3.3, 0.65P (Pb−Free) 13” 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DR ISSUE B GENERIC MARKING DIAGRAM* XXXX AYWWG G DOCUMENT NUMBER: DESCRIPTION: XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 98AON13650G WDFN8 3.3x3.3, 0.65P DATE 02 FEB 2022 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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