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FDMC86116LZ
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 7.5 A, 103 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced PowerTrench® process
that incorporates Shielded Gate technology. This process has
been optimized for the on-state resistance and yet maintain
superior switching performance. G-S zener has been added to
enhance ESD voltage level.
Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL Tested
RoHS Compliant
Application
DC - DC Conversion
Bottom
Top
8
1
7
6
D D D D
5
S
D
S
D
S
D
G
D
G S S S
2 3 4
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
ID
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
TJ, TSTG
±20
V
(Note 1a)
3.3
A
15
Single Pulse Avalanche Energy
PD
Units
V
7.5
-Pulsed
EAS
Ratings
100
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
12
19
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
6.5
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC86116Z
Device
FDMC86116LZ
©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C2
Package
Power 33
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET
November 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±10
μA
2.2
V
100
V
73
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 3.3 A
79
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 2.7 A
105
153
VGS = 10 V, ID = 3.3 A, TJ = 125 °C
136
178
gFS
Forward Transconductance
1.0
VDS = 5 V, ID = 3.3 A
1.8
-6
mV/°C
103
11
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
232
310
pF
45
60
pF
2.4
5
pF
Ω
0.7
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 3.3 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 50 V,
ID = 3.3 A
4.5
10
1.3
10
ns
ns
10
20
ns
1.4
10
ns
4
6
nC
2
3
nC
0.8
nC
0.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3.3 A
(Note 2)
0.85
1.3
VGS = 0 V, IS = 2 A
(Note 2)
0.82
1.2
IF = 3.3 A, di/dt = 100 A/μs
V
33
54
ns
23
38
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 90 V, VGS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C2
2
www.fairchildsemi.com
FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
5
VGS = 10 V
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
15
VGS = 4 V
12
9
VGS = 3.5 V
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
3
0
0
1
2
3
4
VGS = 3 V
VGS = 3.5 V
4
VGS = 4 V
3
VGS = 4.5 V
2
1
0
5
0
3
Figure 1. On Region Characteristics
500
ID = 3.3 A
VGS = 10 V
ID = 3.3 A
SOURCE ON-RESISTANCE (mΩ)
12
15
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
400
1.8
rDS(on), DRAIN TO
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
9
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
1.6
1.4
1.2
1.0
300
200
TJ = 125 oC
100
0.8
0.6
-75
-50
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
9
6
TJ = 25 oC
3
TJ = -55 oC
0
1
2
3
4
5
20
10
6
8
10
VGS = 0 V
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
0.001
0.0
6
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C2
4
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = 150 oC
2
VGS, GATE TO SOURCE VOLTAGE (V)
15
12
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
6
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
ID = 3.3 A
VDD = 25 V
8
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 50 V
6
VDD = 75 V
4
100
Coss
10
2
f = 1 MHz
VGS = 0 V
0
0
1
2
3
4
1
0.1
5
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
-1
10
9
8
7
6
5
10
Ig, GATE LEAKAGE CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 25 oC
4
TJ = 100 oC
3
2
TJ = 125 oC
1
0.001
-2
10
VGS = 0 V
-3
10
-4
10
TJ = 125 oC
-5
10
-6
10
TJ = 25 oC
-7
10
-8
10
-9
0.01
0.1
1
10
10
0
tAV, TIME IN AVALANCHE (ms)
4
8
12
16
20
24
28
32
36
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
10
20
10
8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Crss
VGS = 10 V
6
Limited by package
4
VGS = 4.5 V
2
o
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
0.1
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
DC
1
10
100
400
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
Figure 11. Maximum Continuous Drain
Current vs Case Temperature
©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C2
1 ms
THIS AREA IS
LIMITED BY rDS(on)
0.01 TA = 25 oC
0.005
0.1
RθJC = 6.5 C/W
0
25
100 us
1
4
www.fairchildsemi.com
FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
500
100
10
SINGLE PULSE
o
RθJA = 125 C/W
o
1
TA = 25 C
0.5 -4
10
-3
-2
10
-1
10
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C2
5
www.fairchildsemi.com
FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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