FDN352AP

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDN352AP Single P-Channel, PowerTrench® MOSFET Features General Description ■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Applications ■ Notebook computer power management D D S G G S SuperSOT™-3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current –1.3 A – Continuous (Note 1a) – Pulsed PD –10 Power Dissipation for Single Operation TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7’’ 8mm 3000 units ©2005 Fairchild Semiconductor Corporation FDN352AP Rev. C1 1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 Symbol Parameter Test Conditions Min Typ Max Units –17 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA –30 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –1.3 A VGS = –4.5 V, ID = –1.1 A VGS = –4.5 V, ID = –1.1 A, TJ = 125°C 150 250 330 gFS Forward Transconductance VDS = –5 V, ID = –0.9 A 2.0 VDS = –15 V, VGS = 0 V, f = 1.0 MHz –0.8 –2.0 –2.5 V mV/°C 4 180 300 400 mΩ S Dynamic Characteristics Ciss Input Capacitance 150 pF Coss Output Capacitance 40 pF Crss Reverse Transfer Capacitance 20 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf 4 8 ns 15 28 ns Turn–Off Delay Time 10 18 ns Turn–Off Fall Time 1 2 ns 1.4 1.9 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω VDS = –10V, ID = –0.9 A, VGS = –4.5 V nC 0.5 nC 0.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = –3.9 A, dIF/dt = 100 A/µs (Note 2) –0.8 –0.42 A –1.2 V 17 ns 7 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins RθJC is guaranteed by design while RθJA is determined by the user’s board design. (a) RθJA = 250°C/W when mounted on a 0.02 in2 pad of 2oz. copper. (b) RθJA = 270°C/W when mounted on a 0.001 in2 pad of 2oz. copper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDN352AP Rev. C1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 10 2.4 VGS = -4.0V -ID, DRAIN CURRENT (A) 8 -6.0V 6 -4.5V 4 -4.0V 2 2.2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -3.5V 2.0 -4.5V 1.8 -5.0V 1.6 -6.0V 1.4 -7.0V -8.0V -10V 1.2 1.0 -3.0V 0 0.8 0 1 2 3 -VDS , DRAIN TO SOURCE VOLTAGE (V) 4 5 0 Figure 1. On-Region Characteristics. 8 10 0.7 I D = -0.45A I D = -0.9A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 6 -ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1 0.8 0.6 0.6 0.5 0.4 T A = 125 oC 0.3 T A = 25 oC 0.2 0.1 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE ( oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 8 -I S , REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 2 TA = -55 oC o 125 C 6 o 25 C 4 2 VGS = 0V 10 1 TA = 125 oC 0.1 25 oC 0.01 -55 oC 0.001 0.0001 0 1 2 3 4 5 6 -VGS , GATE TO SOURCE VOLTAGE (V) 7 0.0 8 Figure 5. Transfer Characteristics. 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDN352AP Rev. C1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET Typical Characteristics 10 200 f = 1 MHz VGS = 0 V 8 V DS = -10V 150 CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) I D = -0.9A -20V 6 -15V 4 Ciss 100 Coss 50 2 Crss 0 0 0 0.5 1 1.5 2 Q g, GATE CHARGE (nC) 2.5 0 3 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 5 100µs 10 RDS(ON) LIMIT 1ms 10ms 1 100ms 1s 10s DC VGS = -10V SINGLE PULSE R θJA = 270 o C/W 0.1 o TA = 25 C 1 10 -V DS , DRAIN-SOURCE VOLTAGE (V) 30 20 10 0 0.0001 0.01 0.1 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE RθJA = 270°C/W T A = 25°C 40 0.001 0.01 0.1 1 t 1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) * R θ JA 0.2 0.1 R θJA = 270°C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J – TA = P * R θJA(t) Duty Cycle, D = t 1 / t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 4 FDN352AP Rev. C1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 FDN352AP Rev. C1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET TRADEMARKS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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