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FDPF5N50NZF
N-Channel UniFETTM II FRFET® MOSFET
500 V, 4.2 A, 1.75
Features
Description
• RDS(on) = 1.57 (Typ.) @ VGS = 10 V, ID = 2.1 A
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. The body diode’s reverse recovery performance of
UniFET II FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
• Low Gate Charge (Typ. 9 nC)
• Low Crss (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
Drain to Source Voltage
FDPF5N50NZF
500
Unit
V
VGSS
Gate to Source Voltage
±25
V
Parameter
- Continuous (TC = 25oC)
4.2*
ID
Drain Current
IDM
Drain Current
(Note 1)
16*
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
165
mJ
IAR
Avalanche Current
(Note 1)
4.2
A
EAR
Repetitive Avalanche Energy
(Note 1)
7.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
2.5*
A
30
W
0.24
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDPF5N50NZF
RJC
Thermal Resistance, Junction to Case, Max.
4.1
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
1
Unit
oC/W
www.fairchildsemi.com
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
October 2013
Device Marking
FDPF5N50NZF
Device
FDPF5N50NZF
Package
TO-220F
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.5
-
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TC = 25oC
ID = 250A, Referenced to
25oC
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, VGS = 0V,TC = 125oC
-
-
100
VGS = ±25V, VDS = 0V
-
-
±10
A
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 2.1A
-
1.57
1.75
gFS
Forward Transconductance
VDS = 20V, ID = 2.1A
-
4.2
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
365
485
pF
-
50
65
pF
-
4
8
pF
-
9
12
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V ID = 4.2A
VGS = 10V
(Note 4)
-
2
-
nC
-
4
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 4.2A
VGS = 10V, RGEN = 25
(Note 4)
-
12
35
ns
-
19
50
ns
-
31
70
ns
-
22
55
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
4.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
16
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4.2A
-
-
1.5
V
trr
Reverse Recovery Time
-
87
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 4.2A
dIF/dt = 100A/s
-
0.15
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 18.7mH, IAS = 4.2A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 4.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
2
www.fairchildsemi.com
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
1
ID, Drain Current[A]
ID, Drain Current[A]
10
0.1
o
150 C
1
o
25 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.03
0.1
0.1
25
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS, Gate-Source Voltage[V]
8
50
3.2
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
3
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.6
2.8
2.4
VGS = 10V
VGS = 20V
2.0
1.6
10
o
150 C
1.2
*Note: TC = 25 C
0
2
4
6
ID, Drain Current [A]
8
1
0.4
10
Figure 5. Capacitance Characteristics
o
25 C
*Notes:
1. VGS = 0V
o
2. 250s Pulse Test
0.8
1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10
800
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
Capacitances [pF]
o
-55 C
Ciss
400
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
200
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
0
1
10
VDS, Drain-Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
30
3
*Note: ID = 4.2A
0
2
4
6
8
Qg, Total Gate Charge [nC]
10
www.fairchildsemi.com
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
Typical Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
vs. Case Temperature-FDPF5N50NZF
30
30s
10
1.10
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.05
1.00
0.95
0.90
-75 -50
100s
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
*Notes:
1. VGS = 0V
2. ID = 250A
0
50
100
o
TJ, Junction Temperature [ C]
o
0.01
150
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
5
ID, Drain Current [A]
4
3
2
1
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve-FDPF5N50NZF
4.3
ZThermal
Response[Z
[oC/W]
Response
JC(t), Thermal
JC]
0.5
1
0.2
0.1
PDM
0.05
t1
0.02
0.1
0.01
t2
*Notes:
o
1. ZJC(t) = 4.1 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
1
10
2
10
t1, Square Wave Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
4
www.fairchildsemi.com
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
Typical Characteristics (Continued)
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
Figure 11. Gate Charge Test Circuit & Waveform
IG = const.
Figure 12. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
5
www.fairchildsemi.com
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
6
www.fairchildsemi.com
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
Mechanical Dimensions
TO-220F 3L
Figure 15. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003
Dimension in Millimeters
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
8
www.fairchildsemi.com
FDPF5N50NZF — N-Channel UniFETTM II FRFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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