FDWS86368-F085

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET, N-Channel, POWERTRENCH) 80 V, 80 A, 4.5 mW FDWS86368-F085 www.onsemi.com Features • • • • • • Typical RDS(on) = 3.7 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant Applications • • • • • Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems DFN8 5.1x6.3, 1.27P CASE 506DW MARKING DIAGRAM $Y&Z&3&K FDWS86368 $Y &Z &3 &K FDWS86368 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 October, 2019 − Rev. 3 1 Publication Order Number: FDWS86368−F085/D FDWS86368−F085 MOSFET MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted) Symbol Ratings Units VDSS Drain−to−Source Voltage 80 V VGS Gate−to−Source Voltage ±20 V A ID Parameter Drain Current −Continuous (VGS = 10 V) (Note 1) TC = 25°C 80 −Pulsed TC = 25°C See Figure 4 EAS Single Pulse Avalanche Energy PD Power Dissipation (Note 2) Derate Above 25°C TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 82 mJ 214 W 1.43 W/°C −55 to +175 °C 0.7 °C/W 50 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 40 mH, IAS = 64 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche. 3. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping† FDWS86368 FDWS86368−F085 DFN8 5.1x6.3, 1.27P (Pb−Free) 3000 units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2 FDWS86368−F085 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V Drain−to−Source Leakage Current VDS = 80 V, VGS = 0 V, TJ = 25°C 1 mA VDS = 80 V, VGS = 0 V, TJ = 175°C (Note 4) 1 mA Gate−to−Source Leakage Current VGS = ±20 V ±100 nA 3.0 4.0 V mW 80 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA RDS(on) Drain to Source On Resistance ID = 80 A, VGS = 10 V, TJ = 25°C 3.7 4.5 ID = 80 A, VGS = 10 V, TJ = 175°C (Note 4) 7.4 9.0 2.0 DYNAMIC CHARACTERISTICS VDS = 40 V, VGS = 0 V, f = 1 MHz Ciss Input Capacitance 4350 pF Coss Output Capacitance 636 pF Crss Reverse Transfer Capacitance 20 pF 2.5 W Rg Qg(TOT) Qg(th) Gate Resistance f = 1 MHz Total Gate Charge VGS = 0 V to 10 V Threshold Gate Charge VGS = 0 V to 2 V VDD = 64 V, ID = 80 A 57 75 nC 8 nC Qgs Gate−to−Source Gate Charge 23 nC Qgd Gate−to−Drain “Miller” Charge 11 nC SWITCHING CHARACTERISTICS VDD = 40 V, ID = 80 A, VGS = 10V, RGEN = 6 W ton Turn−On Time td(on) Turn−On Delay 23 ns Rise Time 22 ns Turn−Off Delay 32 ns Fall Time 13 tr td(off) tf toff 60 Turn−Off Time ns ns 59 ns 1.25 1.2 V 58 75 ns 49 67 nC DRAIN−SOURCE DIODE CHARACTERISTICS V SD Source−to−Drain Diode Voltage VGS = 0 V, ISD = 80 A VGS = 0 V, ISD = 40 A t Reverse−Recovery Time IF = 80 A, DISD/Dt = 100 A/ms, VDD = 64 V rr Q rr Reverse−Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 3 FDWS86368−F085 1.2 200 CURRENT LIMITED BY PACKAGE 175 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 150 VGS = 10V CURRENT LIMITED BY SILICON 125 100 75 50 25 0 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 25 Figure 1. Normalized Power Dissipation vs. Case Temperature 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, Z qJC DUTY CYCLE − DESCENDING ORDER 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJC x RqJC + TC SINGLE PULSE 0.01 −5 10 −4 10 −3 −2 −1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 T C = 25 o C VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 25 175 − T C 150 100 SINGLE PULSE 10 −5 10 −4 10 −3 −2 −1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 0 10 1 10 FDWS86368−F085 TYPICAL CHARACTERISTICS 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.01 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 150 oC 1 0.001 500 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 100 1000 300 200 150 TJ = 175oC TJ = 25 oC o TJ = −55 C 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 10 TJ = 175 oC TJ = 25 oC 1 0 2 1 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 50 0.1 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 100 0.01 tAV, TIME IN AVALANCHE (ms) 300 250 STARTING TJ = 25oC 10 Figure 5. Forward Bias Safe Operating Area 0.1 0.0 9 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 300 300 VGS 250 200 80m s PULSE WIDTH Tj=25oC 150 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(I AS)/(1.3*RATED BVDSS − VDD) If R 00 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS − VDD) +1] 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 100 50 80ms PULSE WIDTH Tj=175oC 250 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 200 150 100 5V 50 5V 0 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 5 5 FDWS86368−F085 rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) 40 ID = 80A NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 30 TJ = 175 oC TJ = 25 oC 20 10 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.6 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATUREo(C) 200 1.10 ID = 5mA 1.05 1.0 0.8 1.00 0.6 0.95 0.4 0.2 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 −80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 10 f = 1MHz VGS = 0V 1 0.1 −40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 CAPACITANCE (pF) 1.8 Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250m A 1.2 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 2.2 Crss 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 ID = 80A VDD = 40V VDD = 48V 6 4 2 0 0 Figure 15. Capacitance vs. Drain to Source Voltage VDD =32V 8 10 20 30 40 Qg, GATE CHARGE(nC) 50 60 Figure 16. Single Pulse Maximum Power Dissipation POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5.1x6.3, 1.27P CASE 506DW ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13746G DFN8 5.1x6.3, 1.27P DATE 02 JUL 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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