FGH40N60SFDTU-F085

IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085) These Devices are Pb−Free and are RoHS Compliant G E E Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N60 SFD $Y&Z&3&K FGH40N60 SFDTU Industrial Automotive $Y &Z &3 &K FGH40N60SFD, FGH40N60SFDTU = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February, 2020 − Rev. 3 1 Publication Order Number: FGH40N60SFDTU−F085/D FGH40N60SFDTU, FGH40N60SFDTU−F085 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±20 V ±30 V 80 A 40 A Transient Gate−to−Emitter Voltage Collector Current IC TC = 25°C TC = 100°C Pulsed Collector Current TC = 25°C ICM (Note 1) 120 A Maximum Power Dissipation TC = 25°C PD 290 W 116 W TC = 100°C Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction−to−Case Parameter RJC (IGBT) 0.43 °C/W Thermal Resistance, Junction−to−Case RJC (Diode) 1.45 °C/W RJA 40 °C/W Thermal Resistance, Junction−to−Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FGH40N60SFDTU FGH40N60SFD TO−247 Tube − − 30 FGH40N60SFDTU−F085* FGH40N60SFDTU TO−247 Tube − − 30 *Qualified to Automotive Requirements of AEC−Q101 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A − 0.6 − V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.0 4.7 6.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 2.3 2.9 V IC = 40 A, VGE = 15 V, TC = 125°C − 2.5 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 1920 − pF ON CHARACTERISTICs DYNAMIC CHARACTERISTICS Input Capacitance Cies Output Capacitance Coes − 190 − pF Reverse Transfer Capacitance Cres − 65 − pF www.onsemi.com 2 FGH40N60SFDTU, FGH40N60SFDTU−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 21 − ns − 35 − ns td(off) − 138 − ns tf − 18 54 ns Turn−On Switching Loss Eon − 1.23 − mJ Turn−Off Switching Loss Eoff − 0.38 − mJ Total Switching Loss Ets − 1.61 − mJ Turn−On Delay Time td(on) − 21 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time VCC = 400 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 25°C td(on) Rise Time tr Turn−Off Delay Time Fall Time Rise Time VCC = 400 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 125°C − 39 − ns td(off) tr − 144 − ns tf − 48 − ns Turn−On Switching Loss Eon − 1.58 − mJ Turn−Off Switching Loss Eoff − 0.58 − mJ Total Switching Loss Ets − 2.16 − mJ Total Gate Charge Qg − 121 − nC Gate to Emitter Charge Qge − 16 − nC Gate to Collector Charge Qgc − 68 − nC Min Typ Max Unit TC = 25°C − 1.80 2.6 V TC = 125°C − 1.70 − TC = 25°C − 68 − TC = 125°C − 240 − TC = 25°C − 160 − TC = 125°C − 840 − Turn−Off Delay Time Fall Time VCE = 400 V, IC = 40 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM trr Test Conditions IF = 20 A IF = 20 A, diF/dt = 200 A/s Qrr ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40N60SFDTU, FGH40N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transfer Characteristics Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 FGH40N60SFDTU, FGH40N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics vs. Gate Resistance www.onsemi.com 5 FGH40N60SFDTU, FGH40N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 13. Turn−Off Characteristics vs. Gate Resistance Figure 14. Turn−On Characteristics vs. Collector Current Figure 15. Turn−Off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance Figure 17. Switching Loss vs. Collector Current Figure 18. Turn−Off Switching SOA Characteristics www.onsemi.com 6 FGH40N60SFDTU, FGH40N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 19. Forward Characteristics Figure 20. Reverse Current Figure 21. Stored Charge Figure 22. Reverse Recovery Time PDM t1 t2 Figure 23. Transient Thermal Impedance of IGBT www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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